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Carrier Recombination Dynamics in Sulfur-Doped InP Nanowires.

Zhang, Wei LU ; Lehmann, Sebastian LU ; Mergenthaler, Kilian LU ; Wallentin, Jesper LU ; Borgström, Magnus LU ; Pistol, Mats-Erik LU and Yartsev, Arkady LU (2015) In Nano Letters 15(11). p.7238-7244
Abstract
Measuring lifetime of photogenerated charges in semiconductor nanowires (NW) is important for understanding light-induced processes in these materials and is relevant for their photovoltaic and photodetector applications. In this paper, we investigate the dynamics of photogenerated charge carriers in a series of as-grown InP NW with different levels of sulfur (S) doping. We observe that photoluminescence (PL) decay time as well as integrated PL intensity decreases with increasing S doping. We attribute these observations to hole trapping with the trap density increased due to S-doping level followed by nonradiative recombination of trapped charges. This assignment is proven by observation of the trap saturation in three independent... (More)
Measuring lifetime of photogenerated charges in semiconductor nanowires (NW) is important for understanding light-induced processes in these materials and is relevant for their photovoltaic and photodetector applications. In this paper, we investigate the dynamics of photogenerated charge carriers in a series of as-grown InP NW with different levels of sulfur (S) doping. We observe that photoluminescence (PL) decay time as well as integrated PL intensity decreases with increasing S doping. We attribute these observations to hole trapping with the trap density increased due to S-doping level followed by nonradiative recombination of trapped charges. This assignment is proven by observation of the trap saturation in three independent experiments: via excitation power and repetition rate PL lifetime dependencies and by PL pump-probe experiment. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
15
issue
11
pages
7238 - 7244
publisher
The American Chemical Society
external identifiers
  • pmid:26421505
  • wos:000364725400011
  • scopus:84947080875
ISSN
1530-6992
DOI
10.1021/acs.nanolett.5b02022
language
English
LU publication?
yes
id
ce8bee32-c746-45de-b8d1-8a0dc7022838 (old id 8159945)
date added to LUP
2015-11-11 17:58:40
date last changed
2017-10-22 03:28:37
@article{ce8bee32-c746-45de-b8d1-8a0dc7022838,
  abstract     = {Measuring lifetime of photogenerated charges in semiconductor nanowires (NW) is important for understanding light-induced processes in these materials and is relevant for their photovoltaic and photodetector applications. In this paper, we investigate the dynamics of photogenerated charge carriers in a series of as-grown InP NW with different levels of sulfur (S) doping. We observe that photoluminescence (PL) decay time as well as integrated PL intensity decreases with increasing S doping. We attribute these observations to hole trapping with the trap density increased due to S-doping level followed by nonradiative recombination of trapped charges. This assignment is proven by observation of the trap saturation in three independent experiments: via excitation power and repetition rate PL lifetime dependencies and by PL pump-probe experiment.},
  author       = {Zhang, Wei and Lehmann, Sebastian and Mergenthaler, Kilian and Wallentin, Jesper and Borgström, Magnus and Pistol, Mats-Erik and Yartsev, Arkady},
  issn         = {1530-6992},
  language     = {eng},
  number       = {11},
  pages        = {7238--7244},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Carrier Recombination Dynamics in Sulfur-Doped InP Nanowires.},
  url          = {http://dx.doi.org/10.1021/acs.nanolett.5b02022},
  volume       = {15},
  year         = {2015},
}