Synthesis, properties, and top-gated metal-oxide-semiconductor field-effect transistors of p-type GaSb nanowires
(2013) In RSC Advances 3(43). p.19834-19839- Abstract
- High-quality GaSb nanowires (NWs) have been synthesized via chemical vapor deposition. The as-synthesized NWs have a zinc-blende structure with growth direction along a < 011 > direction. Raman spectrum of the GaSb NWs consists of two peaks, corresponding to the LO and TO phonon modes, respectively. The temperature dependence of the photoluminescence spectra shows a blue-shift as the temperature decreases from 300 to 13 K. The electrical properties of the GaSb NWs are investigated over a wide range of temperatures from 25 mK to 291 K. The results show that the GaSb NWs exhibit excellent p-type transistor performance at low temperatures (<40 K). The room-temperature hole density and mobility were found to be similar to 2.2 x 10(18)... (More)
- High-quality GaSb nanowires (NWs) have been synthesized via chemical vapor deposition. The as-synthesized NWs have a zinc-blende structure with growth direction along a < 011 > direction. Raman spectrum of the GaSb NWs consists of two peaks, corresponding to the LO and TO phonon modes, respectively. The temperature dependence of the photoluminescence spectra shows a blue-shift as the temperature decreases from 300 to 13 K. The electrical properties of the GaSb NWs are investigated over a wide range of temperatures from 25 mK to 291 K. The results show that the GaSb NWs exhibit excellent p-type transistor performance at low temperatures (<40 K). The room-temperature hole density and mobility were found to be similar to 2.2 x 10(18) cm(-3) and similar to 14.2 cm(2) V-1 s(-1), respectively. The Schottky contact characteristics were observed and the barrier height was found to be similar to 14 meV. Our results show that the GaSb NWs could be used as building blocks for emerging p-type nanoelectronic devices in extremely low temperature environments. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4204198
- author
- Xu, Guangwei ; Huang, Shaoyun ; Wang, Xiaoye ; Yu, Bin ; Zhang, Hui ; Yang, Tao ; Xu, Hongqi LU and Dai, Lun
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- in
- RSC Advances
- volume
- 3
- issue
- 43
- pages
- 19834 - 19839
- publisher
- Royal Society of Chemistry
- external identifiers
-
- wos:000325950600022
- scopus:84886888853
- ISSN
- 2046-2069
- DOI
- 10.1039/c3ra43127d
- language
- English
- LU publication?
- yes
- id
- 816842f5-078c-479b-b504-bf5d0b17f225 (old id 4204198)
- date added to LUP
- 2016-04-01 13:48:00
- date last changed
- 2023-09-03 05:13:53
@article{816842f5-078c-479b-b504-bf5d0b17f225, abstract = {{High-quality GaSb nanowires (NWs) have been synthesized via chemical vapor deposition. The as-synthesized NWs have a zinc-blende structure with growth direction along a < 011 > direction. Raman spectrum of the GaSb NWs consists of two peaks, corresponding to the LO and TO phonon modes, respectively. The temperature dependence of the photoluminescence spectra shows a blue-shift as the temperature decreases from 300 to 13 K. The electrical properties of the GaSb NWs are investigated over a wide range of temperatures from 25 mK to 291 K. The results show that the GaSb NWs exhibit excellent p-type transistor performance at low temperatures (<40 K). The room-temperature hole density and mobility were found to be similar to 2.2 x 10(18) cm(-3) and similar to 14.2 cm(2) V-1 s(-1), respectively. The Schottky contact characteristics were observed and the barrier height was found to be similar to 14 meV. Our results show that the GaSb NWs could be used as building blocks for emerging p-type nanoelectronic devices in extremely low temperature environments.}}, author = {{Xu, Guangwei and Huang, Shaoyun and Wang, Xiaoye and Yu, Bin and Zhang, Hui and Yang, Tao and Xu, Hongqi and Dai, Lun}}, issn = {{2046-2069}}, language = {{eng}}, number = {{43}}, pages = {{19834--19839}}, publisher = {{Royal Society of Chemistry}}, series = {{RSC Advances}}, title = {{Synthesis, properties, and top-gated metal-oxide-semiconductor field-effect transistors of p-type GaSb nanowires}}, url = {{http://dx.doi.org/10.1039/c3ra43127d}}, doi = {{10.1039/c3ra43127d}}, volume = {{3}}, year = {{2013}}, }