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Synthesis, properties, and top-gated metal-oxide-semiconductor field-effect transistors of p-type GaSb nanowires

Xu, Guangwei ; Huang, Shaoyun ; Wang, Xiaoye ; Yu, Bin ; Zhang, Hui ; Yang, Tao ; Xu, Hongqi LU and Dai, Lun (2013) In RSC Advances 3(43). p.19834-19839
Abstract
High-quality GaSb nanowires (NWs) have been synthesized via chemical vapor deposition. The as-synthesized NWs have a zinc-blende structure with growth direction along a < 011 > direction. Raman spectrum of the GaSb NWs consists of two peaks, corresponding to the LO and TO phonon modes, respectively. The temperature dependence of the photoluminescence spectra shows a blue-shift as the temperature decreases from 300 to 13 K. The electrical properties of the GaSb NWs are investigated over a wide range of temperatures from 25 mK to 291 K. The results show that the GaSb NWs exhibit excellent p-type transistor performance at low temperatures (<40 K). The room-temperature hole density and mobility were found to be similar to 2.2 x 10(18)... (More)
High-quality GaSb nanowires (NWs) have been synthesized via chemical vapor deposition. The as-synthesized NWs have a zinc-blende structure with growth direction along a < 011 > direction. Raman spectrum of the GaSb NWs consists of two peaks, corresponding to the LO and TO phonon modes, respectively. The temperature dependence of the photoluminescence spectra shows a blue-shift as the temperature decreases from 300 to 13 K. The electrical properties of the GaSb NWs are investigated over a wide range of temperatures from 25 mK to 291 K. The results show that the GaSb NWs exhibit excellent p-type transistor performance at low temperatures (<40 K). The room-temperature hole density and mobility were found to be similar to 2.2 x 10(18) cm(-3) and similar to 14.2 cm(2) V-1 s(-1), respectively. The Schottky contact characteristics were observed and the barrier height was found to be similar to 14 meV. Our results show that the GaSb NWs could be used as building blocks for emerging p-type nanoelectronic devices in extremely low temperature environments. (Less)
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author
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
RSC Advances
volume
3
issue
43
pages
19834 - 19839
publisher
Royal Society of Chemistry
external identifiers
  • wos:000325950600022
  • scopus:84886888853
ISSN
2046-2069
DOI
10.1039/c3ra43127d
language
English
LU publication?
yes
id
816842f5-078c-479b-b504-bf5d0b17f225 (old id 4204198)
date added to LUP
2016-04-01 13:48:00
date last changed
2023-09-03 05:13:53
@article{816842f5-078c-479b-b504-bf5d0b17f225,
  abstract     = {{High-quality GaSb nanowires (NWs) have been synthesized via chemical vapor deposition. The as-synthesized NWs have a zinc-blende structure with growth direction along a &lt; 011 &gt; direction. Raman spectrum of the GaSb NWs consists of two peaks, corresponding to the LO and TO phonon modes, respectively. The temperature dependence of the photoluminescence spectra shows a blue-shift as the temperature decreases from 300 to 13 K. The electrical properties of the GaSb NWs are investigated over a wide range of temperatures from 25 mK to 291 K. The results show that the GaSb NWs exhibit excellent p-type transistor performance at low temperatures (&lt;40 K). The room-temperature hole density and mobility were found to be similar to 2.2 x 10(18) cm(-3) and similar to 14.2 cm(2) V-1 s(-1), respectively. The Schottky contact characteristics were observed and the barrier height was found to be similar to 14 meV. Our results show that the GaSb NWs could be used as building blocks for emerging p-type nanoelectronic devices in extremely low temperature environments.}},
  author       = {{Xu, Guangwei and Huang, Shaoyun and Wang, Xiaoye and Yu, Bin and Zhang, Hui and Yang, Tao and Xu, Hongqi and Dai, Lun}},
  issn         = {{2046-2069}},
  language     = {{eng}},
  number       = {{43}},
  pages        = {{19834--19839}},
  publisher    = {{Royal Society of Chemistry}},
  series       = {{RSC Advances}},
  title        = {{Synthesis, properties, and top-gated metal-oxide-semiconductor field-effect transistors of p-type GaSb nanowires}},
  url          = {{http://dx.doi.org/10.1039/c3ra43127d}},
  doi          = {{10.1039/c3ra43127d}},
  volume       = {{3}},
  year         = {{2013}},
}