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Gas phase chemical vapor deposition chemistry of triethylboron probed by boron-carbon thin film deposition and quantum chemical calculations

Imam, Mewlude; Gaul, Konstantin; Stegmueller, Andreas; Höglund, Carina LU ; Jensen, Jens; Hultman, Lars; Birch, Jens; Tonner, Ralf and Pedersen, Henrik (2015) In Journal of Materials Chemistry C 3(41). p.10898-10906
Abstract
We present triethylboron (TEB) as a single-source precursor for chemical vapor deposition (CVD) of BxC thin films and study its gas phase chemistry under CVD conditions by quantum chemical calculations. A comprehensive thermochemical catalogue for the species of the gas phase chemistry of TEB is examined and found to be dominated by beta-hydride eliminations of C2H4 to yield BH3. A complementary bimolecular reaction path based on H-2 assisted C2H6 elimination to BH3 is also significant at lower temperatures in the presence of hydrogen. Furthermore, we find a temperature window of 600-1000 degrees C for the deposition of X-ray amorphous BxC films with 2.5 <= x <= 4.5 from TEB. Films grown at temperatures below 600 degrees C contain... (More)
We present triethylboron (TEB) as a single-source precursor for chemical vapor deposition (CVD) of BxC thin films and study its gas phase chemistry under CVD conditions by quantum chemical calculations. A comprehensive thermochemical catalogue for the species of the gas phase chemistry of TEB is examined and found to be dominated by beta-hydride eliminations of C2H4 to yield BH3. A complementary bimolecular reaction path based on H-2 assisted C2H6 elimination to BH3 is also significant at lower temperatures in the presence of hydrogen. Furthermore, we find a temperature window of 600-1000 degrees C for the deposition of X-ray amorphous BxC films with 2.5 <= x <= 4.5 from TEB. Films grown at temperatures below 600 degrees C contain high amounts of H, while temperatures above 1000 degrees C result in C-rich films. The film density and hardness are determined to be in the range of 2.40-2.65 g cm(-3) and 29-39 GPa, respectively, within the determined temperature window. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Materials Chemistry C
volume
3
issue
41
pages
10898 - 10906
publisher
Royal Society of Chemistry
external identifiers
  • wos:000363252200030
  • scopus:84945151879
ISSN
2050-7526
DOI
10.1039/c5tc02293b
language
English
LU publication?
yes
id
505393ae-0d6c-4bfb-b8d0-b2dab53d05f5 (old id 8201719)
date added to LUP
2015-11-26 13:04:02
date last changed
2017-01-01 03:17:47
@article{505393ae-0d6c-4bfb-b8d0-b2dab53d05f5,
  abstract     = {We present triethylboron (TEB) as a single-source precursor for chemical vapor deposition (CVD) of BxC thin films and study its gas phase chemistry under CVD conditions by quantum chemical calculations. A comprehensive thermochemical catalogue for the species of the gas phase chemistry of TEB is examined and found to be dominated by beta-hydride eliminations of C2H4 to yield BH3. A complementary bimolecular reaction path based on H-2 assisted C2H6 elimination to BH3 is also significant at lower temperatures in the presence of hydrogen. Furthermore, we find a temperature window of 600-1000 degrees C for the deposition of X-ray amorphous BxC films with 2.5 &lt;= x &lt;= 4.5 from TEB. Films grown at temperatures below 600 degrees C contain high amounts of H, while temperatures above 1000 degrees C result in C-rich films. The film density and hardness are determined to be in the range of 2.40-2.65 g cm(-3) and 29-39 GPa, respectively, within the determined temperature window.},
  author       = {Imam, Mewlude and Gaul, Konstantin and Stegmueller, Andreas and Höglund, Carina and Jensen, Jens and Hultman, Lars and Birch, Jens and Tonner, Ralf and Pedersen, Henrik},
  issn         = {2050-7526},
  language     = {eng},
  number       = {41},
  pages        = {10898--10906},
  publisher    = {Royal Society of Chemistry},
  series       = {Journal of Materials Chemistry C},
  title        = {Gas phase chemical vapor deposition chemistry of triethylboron probed by boron-carbon thin film deposition and quantum chemical calculations},
  url          = {http://dx.doi.org/10.1039/c5tc02293b},
  volume       = {3},
  year         = {2015},
}