Gas phase chemical vapor deposition chemistry of triethylboron probed by boron-carbon thin film deposition and quantum chemical calculations
(2015) In Journal of Materials Chemistry C 3(41). p.10898-10906- Abstract
- We present triethylboron (TEB) as a single-source precursor for chemical vapor deposition (CVD) of BxC thin films and study its gas phase chemistry under CVD conditions by quantum chemical calculations. A comprehensive thermochemical catalogue for the species of the gas phase chemistry of TEB is examined and found to be dominated by beta-hydride eliminations of C2H4 to yield BH3. A complementary bimolecular reaction path based on H-2 assisted C2H6 elimination to BH3 is also significant at lower temperatures in the presence of hydrogen. Furthermore, we find a temperature window of 600-1000 degrees C for the deposition of X-ray amorphous BxC films with 2.5 <= x <= 4.5 from TEB. Films grown at temperatures below 600 degrees C contain... (More)
- We present triethylboron (TEB) as a single-source precursor for chemical vapor deposition (CVD) of BxC thin films and study its gas phase chemistry under CVD conditions by quantum chemical calculations. A comprehensive thermochemical catalogue for the species of the gas phase chemistry of TEB is examined and found to be dominated by beta-hydride eliminations of C2H4 to yield BH3. A complementary bimolecular reaction path based on H-2 assisted C2H6 elimination to BH3 is also significant at lower temperatures in the presence of hydrogen. Furthermore, we find a temperature window of 600-1000 degrees C for the deposition of X-ray amorphous BxC films with 2.5 <= x <= 4.5 from TEB. Films grown at temperatures below 600 degrees C contain high amounts of H, while temperatures above 1000 degrees C result in C-rich films. The film density and hardness are determined to be in the range of 2.40-2.65 g cm(-3) and 29-39 GPa, respectively, within the determined temperature window. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/8201719
- author
- Imam, Mewlude ; Gaul, Konstantin ; Stegmueller, Andreas ; Höglund, Carina LU ; Jensen, Jens ; Hultman, Lars ; Birch, Jens ; Tonner, Ralf and Pedersen, Henrik
- organization
- publishing date
- 2015
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Journal of Materials Chemistry C
- volume
- 3
- issue
- 41
- pages
- 10898 - 10906
- publisher
- Royal Society of Chemistry
- external identifiers
-
- wos:000363252200030
- scopus:84945151879
- ISSN
- 2050-7526
- DOI
- 10.1039/c5tc02293b
- language
- English
- LU publication?
- yes
- id
- 505393ae-0d6c-4bfb-b8d0-b2dab53d05f5 (old id 8201719)
- date added to LUP
- 2016-04-01 10:07:18
- date last changed
- 2022-04-19 22:50:45
@article{505393ae-0d6c-4bfb-b8d0-b2dab53d05f5, abstract = {{We present triethylboron (TEB) as a single-source precursor for chemical vapor deposition (CVD) of BxC thin films and study its gas phase chemistry under CVD conditions by quantum chemical calculations. A comprehensive thermochemical catalogue for the species of the gas phase chemistry of TEB is examined and found to be dominated by beta-hydride eliminations of C2H4 to yield BH3. A complementary bimolecular reaction path based on H-2 assisted C2H6 elimination to BH3 is also significant at lower temperatures in the presence of hydrogen. Furthermore, we find a temperature window of 600-1000 degrees C for the deposition of X-ray amorphous BxC films with 2.5 <= x <= 4.5 from TEB. Films grown at temperatures below 600 degrees C contain high amounts of H, while temperatures above 1000 degrees C result in C-rich films. The film density and hardness are determined to be in the range of 2.40-2.65 g cm(-3) and 29-39 GPa, respectively, within the determined temperature window.}}, author = {{Imam, Mewlude and Gaul, Konstantin and Stegmueller, Andreas and Höglund, Carina and Jensen, Jens and Hultman, Lars and Birch, Jens and Tonner, Ralf and Pedersen, Henrik}}, issn = {{2050-7526}}, language = {{eng}}, number = {{41}}, pages = {{10898--10906}}, publisher = {{Royal Society of Chemistry}}, series = {{Journal of Materials Chemistry C}}, title = {{Gas phase chemical vapor deposition chemistry of triethylboron probed by boron-carbon thin film deposition and quantum chemical calculations}}, url = {{http://dx.doi.org/10.1039/c5tc02293b}}, doi = {{10.1039/c5tc02293b}}, volume = {{3}}, year = {{2015}}, }