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Growth of In As nanowires with the morphology and crystal structure controlled by carrier gas flow rate

Li, Ming; Wang, Jingyun; Li, Kan; Xing, Yingjie and Xu, Hongqi LU (2015) In Journal of Crystal Growth 430. p.87-92
Abstract
We report on he growth of single crystal InAs nanowires on Si/SiOx substrates by chemical vapor deposition (CVD). Both pure zincblende InAs nanowires and twin superlattice InAs nanowires are produced. We demonstrate that the morphology and crystal structure of these nanowires can be controlled by tuning the H-2 carrier gas How rate in a CVD furnace and show that highly selected growth of twin superlattice nanowires are achieved at high carrier gas How rates. Our work provides a new route to grow and phase-engineer single crystal InAs nanowires for a wide range of potential applications. (C) 2015 Elsevier B.V. All rights reserved.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Crystal morphology, Low dimensional structures, Nanostructures, Growth, from vapor, Nanomaterials, Semiconducting III-V material
in
Journal of Crystal Growth
volume
430
pages
87 - 92
publisher
Elsevier
external identifiers
  • wos:000362014800015
  • scopus:84941271013
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2015.08.006
language
English
LU publication?
yes
id
2798cb61-dbc9-4b82-a28d-853938ecece3 (old id 8220796)
date added to LUP
2015-11-30 11:18:47
date last changed
2017-09-24 04:08:56
@article{2798cb61-dbc9-4b82-a28d-853938ecece3,
  abstract     = {We report on he growth of single crystal InAs nanowires on Si/SiOx substrates by chemical vapor deposition (CVD). Both pure zincblende InAs nanowires and twin superlattice InAs nanowires are produced. We demonstrate that the morphology and crystal structure of these nanowires can be controlled by tuning the H-2 carrier gas How rate in a CVD furnace and show that highly selected growth of twin superlattice nanowires are achieved at high carrier gas How rates. Our work provides a new route to grow and phase-engineer single crystal InAs nanowires for a wide range of potential applications. (C) 2015 Elsevier B.V. All rights reserved.},
  author       = {Li, Ming and Wang, Jingyun and Li, Kan and Xing, Yingjie and Xu, Hongqi},
  issn         = {0022-0248},
  keyword      = {Crystal morphology,Low dimensional structures,Nanostructures,Growth,from vapor,Nanomaterials,Semiconducting III-V material},
  language     = {eng},
  pages        = {87--92},
  publisher    = {Elsevier},
  series       = {Journal of Crystal Growth},
  title        = {Growth of In As nanowires with the morphology and crystal structure controlled by carrier gas flow rate},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2015.08.006},
  volume       = {430},
  year         = {2015},
}