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Wurtzite-zincblende superlattices in InAs nanowires using a supply interruption method.

Bolinsson, Jessica LU ; Caroff, Philippe LU ; Mandl, Bernhard LU and Dick Thelander, Kimberly LU (2011) In Nanotechnology 22(26).
Abstract
Crystal phase control in single III-V semiconductor nanowires has emerged recently as an important challenge and possible complement to conventional bandgap engineering in single material systems. Here we investigate a supply interruption method for precise crystal phase control in single nanowires. The nanowires are grown by metalorganic vapor phase epitaxy using gold particles as seeds and are analyzed by transmission electron microscopy. It is observed that wurtzite segments with controlled length and position can be inserted on demand into a pure InAs zincblende nanowire. The interface between wurtzite and zincblende segments can be made atomically sharp and the segments can be made only a few bilayers in thickness. The growth... (More)
Crystal phase control in single III-V semiconductor nanowires has emerged recently as an important challenge and possible complement to conventional bandgap engineering in single material systems. Here we investigate a supply interruption method for precise crystal phase control in single nanowires. The nanowires are grown by metalorganic vapor phase epitaxy using gold particles as seeds and are analyzed by transmission electron microscopy. It is observed that wurtzite segments with controlled length and position can be inserted on demand into a pure InAs zincblende nanowire. The interface between wurtzite and zincblende segments can be made atomically sharp and the segments can be made only a few bilayers in thickness. The growth mechanisms, applicability and limitations of the technique are presented and discussed. (Less)
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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
22
issue
26
article number
265606
publisher
IOP Publishing
external identifiers
  • wos:000290719500029
  • pmid:21576775
  • scopus:79957868794
  • pmid:21576775
ISSN
0957-4484
DOI
10.1088/0957-4484/22/26/265606
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
id
830df52c-2e1f-4b33-a121-c2e7d3eafa92 (old id 1972496)
date added to LUP
2016-04-01 10:07:48
date last changed
2025-04-04 14:37:17
@article{830df52c-2e1f-4b33-a121-c2e7d3eafa92,
  abstract     = {{Crystal phase control in single III-V semiconductor nanowires has emerged recently as an important challenge and possible complement to conventional bandgap engineering in single material systems. Here we investigate a supply interruption method for precise crystal phase control in single nanowires. The nanowires are grown by metalorganic vapor phase epitaxy using gold particles as seeds and are analyzed by transmission electron microscopy. It is observed that wurtzite segments with controlled length and position can be inserted on demand into a pure InAs zincblende nanowire. The interface between wurtzite and zincblende segments can be made atomically sharp and the segments can be made only a few bilayers in thickness. The growth mechanisms, applicability and limitations of the technique are presented and discussed.}},
  author       = {{Bolinsson, Jessica and Caroff, Philippe and Mandl, Bernhard and Dick Thelander, Kimberly}},
  issn         = {{0957-4484}},
  language     = {{eng}},
  number       = {{26}},
  publisher    = {{IOP Publishing}},
  series       = {{Nanotechnology}},
  title        = {{Wurtzite-zincblende superlattices in InAs nanowires using a supply interruption method.}},
  url          = {{http://dx.doi.org/10.1088/0957-4484/22/26/265606}},
  doi          = {{10.1088/0957-4484/22/26/265606}},
  volume       = {{22}},
  year         = {{2011}},
}