Periodically Changing Morphology of the Growth Interface in Si, Ge, and GaP Nanowires
(2011) In Physical Review Letters 107(2).- Abstract
- Nanowire growth in the standard < 111 > direction is assumed to occur at a planar catalyst-nanowire interface, but recent reports contradict this picture. Here we show that a nonplanar growth interface is, in fact, a general phenomenon. Both III-V and group IV nanowires show a distinct region at the trijunction with a different orientation whose size oscillates during growth, synchronized with step flow. We develop an explicit model for this structure that agrees well with experiment and shows that the oscillations provide a direct visualization of catalyst supersaturation. We discuss the implications for wire growth and structure.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2092915
- author
- Wen, C. -Y. ; Tersoff, J. ; Hillerich, Karla LU ; Reuter, M. C. ; Park, J. H. ; Kodambaka, S. ; Stach, E. A. and Ross, F. M.
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review Letters
- volume
- 107
- issue
- 2
- article number
- 025503
- publisher
- American Physical Society
- external identifiers
-
- wos:000292516600021
- scopus:79961079164
- ISSN
- 1079-7114
- DOI
- 10.1103/PhysRevLett.107.025503
- language
- English
- LU publication?
- yes
- id
- 837c7b32-572e-476f-915e-068d9171406b (old id 2092915)
- date added to LUP
- 2016-04-01 09:49:57
- date last changed
- 2023-11-09 05:05:22
@article{837c7b32-572e-476f-915e-068d9171406b, abstract = {{Nanowire growth in the standard < 111 > direction is assumed to occur at a planar catalyst-nanowire interface, but recent reports contradict this picture. Here we show that a nonplanar growth interface is, in fact, a general phenomenon. Both III-V and group IV nanowires show a distinct region at the trijunction with a different orientation whose size oscillates during growth, synchronized with step flow. We develop an explicit model for this structure that agrees well with experiment and shows that the oscillations provide a direct visualization of catalyst supersaturation. We discuss the implications for wire growth and structure.}}, author = {{Wen, C. -Y. and Tersoff, J. and Hillerich, Karla and Reuter, M. C. and Park, J. H. and Kodambaka, S. and Stach, E. A. and Ross, F. M.}}, issn = {{1079-7114}}, language = {{eng}}, number = {{2}}, publisher = {{American Physical Society}}, series = {{Physical Review Letters}}, title = {{Periodically Changing Morphology of the Growth Interface in Si, Ge, and GaP Nanowires}}, url = {{http://dx.doi.org/10.1103/PhysRevLett.107.025503}}, doi = {{10.1103/PhysRevLett.107.025503}}, volume = {{107}}, year = {{2011}}, }