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Controlling the growth of epitaxial graphene on metalized diamond (111) surface

Cooil, S. P.; Wells, J. W.; Hu, D.; Niu, Yuran LU ; Zakharov, Alexei LU ; Bianchi, M. and Evans, D. A. (2015) In Applied Physics Letters 107(18).
Abstract
The 2-dimensional transformation of the diamond (111) surface to graphene has been demonstrated using ultrathin Fe films that catalytically reduce the reaction temperature needed for the conversion of sp(3) to sp(2) carbon. An epitaxial system is formed, which involves the re-crystallization of carbon at the Fe/vacuum interface and that enables the controlled growth of monolayer and multilayer graphene films. In order to study the initial stages of single and multilayer graphene growth, real time monitoring of the system was preformed within a photoemission and low energy electron microscope. It was found that the initial graphene growth occurred at temperatures as low as 500 degrees C, whilst increasing the temperature to 560 degrees C... (More)
The 2-dimensional transformation of the diamond (111) surface to graphene has been demonstrated using ultrathin Fe films that catalytically reduce the reaction temperature needed for the conversion of sp(3) to sp(2) carbon. An epitaxial system is formed, which involves the re-crystallization of carbon at the Fe/vacuum interface and that enables the controlled growth of monolayer and multilayer graphene films. In order to study the initial stages of single and multilayer graphene growth, real time monitoring of the system was preformed within a photoemission and low energy electron microscope. It was found that the initial graphene growth occurred at temperatures as low as 500 degrees C, whilst increasing the temperature to 560 degrees C was required to produce multi-layer graphene of high structural quality. Angle resolved photoelectron spectroscopy was used to study the electronic properties of the grown material, where a graphene-like energy momentum dispersion was observed. The Dirac point for the first layer is located at 2.5 eV below the Fermi level, indicating an n-type doping of the graphene due to substrate interactions, while that of the second graphene layer lies close to the Fermi level. (C) 2015 AIP Publishing LLC. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
107
issue
18
publisher
American Institute of Physics
external identifiers
  • wos:000364580800015
  • scopus:84946595501
ISSN
0003-6951
DOI
10.1063/1.4935073
language
English
LU publication?
yes
id
d49b4b47-6a78-4cee-b8d3-829ad7c1332f (old id 8380468)
date added to LUP
2015-12-18 13:53:07
date last changed
2017-01-01 03:26:10
@article{d49b4b47-6a78-4cee-b8d3-829ad7c1332f,
  abstract     = {The 2-dimensional transformation of the diamond (111) surface to graphene has been demonstrated using ultrathin Fe films that catalytically reduce the reaction temperature needed for the conversion of sp(3) to sp(2) carbon. An epitaxial system is formed, which involves the re-crystallization of carbon at the Fe/vacuum interface and that enables the controlled growth of monolayer and multilayer graphene films. In order to study the initial stages of single and multilayer graphene growth, real time monitoring of the system was preformed within a photoemission and low energy electron microscope. It was found that the initial graphene growth occurred at temperatures as low as 500 degrees C, whilst increasing the temperature to 560 degrees C was required to produce multi-layer graphene of high structural quality. Angle resolved photoelectron spectroscopy was used to study the electronic properties of the grown material, where a graphene-like energy momentum dispersion was observed. The Dirac point for the first layer is located at 2.5 eV below the Fermi level, indicating an n-type doping of the graphene due to substrate interactions, while that of the second graphene layer lies close to the Fermi level. (C) 2015 AIP Publishing LLC.},
  articleno    = {181603},
  author       = {Cooil, S. P. and Wells, J. W. and Hu, D. and Niu, Yuran and Zakharov, Alexei and Bianchi, M. and Evans, D. A.},
  issn         = {0003-6951},
  language     = {eng},
  number       = {18},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Controlling the growth of epitaxial graphene on metalized diamond (111) surface},
  url          = {http://dx.doi.org/10.1063/1.4935073},
  volume       = {107},
  year         = {2015},
}