Zincblende-to-wurtzite interface improvement by group III loading in Au-seeded GaAs nanowires
(2013) In Physica Status Solidi. Rapid Research Letters 7(10). p.855-859- Abstract
- Achieving control of the crystal structure is essential in III-V nanowires, since twin defects, stacking faults and uncontrolled zincblende-wurtzite polytypism could have detrimental effects on the physical properties. In addition, precise control of the crystal phases also opens up the possibility of homomaterial bandgap engineering. Here, we show by ex situ chemical analysis of the alloy seed particle that Ga-rich conditions are required for growth of wurtzite GaAs nanowires using Au seed particles in MOVPE. Based on this understanding, we propose and demonstrate a growth procedure to significantly improve the crystal structure quality of the zincblende-to-wurtzite transition in GaAs nanowire heterostructures. ((c) 2013 WILEY-VCH Verlag... (More)
- Achieving control of the crystal structure is essential in III-V nanowires, since twin defects, stacking faults and uncontrolled zincblende-wurtzite polytypism could have detrimental effects on the physical properties. In addition, precise control of the crystal phases also opens up the possibility of homomaterial bandgap engineering. Here, we show by ex situ chemical analysis of the alloy seed particle that Ga-rich conditions are required for growth of wurtzite GaAs nanowires using Au seed particles in MOVPE. Based on this understanding, we propose and demonstrate a growth procedure to significantly improve the crystal structure quality of the zincblende-to-wurtzite transition in GaAs nanowire heterostructures. ((c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4272539
- author
- Jacobsson, Daniel LU ; Lehmann, Sebastian LU and Dick Thelander, Kimberly LU
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- GaAs, nanowires, polytypism, heterostructures, metal-organic vapour, phase epitaxy
- in
- Physica Status Solidi. Rapid Research Letters
- volume
- 7
- issue
- 10
- pages
- 855 - 859
- publisher
- John Wiley & Sons Inc.
- external identifiers
-
- wos:000328484500016
- scopus:84885835510
- ISSN
- 1862-6254
- DOI
- 10.1002/pssr.201307251
- language
- English
- LU publication?
- yes
- id
- 839f4463-ca7e-470b-949a-5fd02d5a6733 (old id 4272539)
- date added to LUP
- 2016-04-01 10:28:34
- date last changed
- 2022-03-19 21:10:56
@article{839f4463-ca7e-470b-949a-5fd02d5a6733, abstract = {{Achieving control of the crystal structure is essential in III-V nanowires, since twin defects, stacking faults and uncontrolled zincblende-wurtzite polytypism could have detrimental effects on the physical properties. In addition, precise control of the crystal phases also opens up the possibility of homomaterial bandgap engineering. Here, we show by ex situ chemical analysis of the alloy seed particle that Ga-rich conditions are required for growth of wurtzite GaAs nanowires using Au seed particles in MOVPE. Based on this understanding, we propose and demonstrate a growth procedure to significantly improve the crystal structure quality of the zincblende-to-wurtzite transition in GaAs nanowire heterostructures. ((c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)}}, author = {{Jacobsson, Daniel and Lehmann, Sebastian and Dick Thelander, Kimberly}}, issn = {{1862-6254}}, keywords = {{GaAs; nanowires; polytypism; heterostructures; metal-organic vapour; phase epitaxy}}, language = {{eng}}, number = {{10}}, pages = {{855--859}}, publisher = {{John Wiley & Sons Inc.}}, series = {{Physica Status Solidi. Rapid Research Letters}}, title = {{Zincblende-to-wurtzite interface improvement by group III loading in Au-seeded GaAs nanowires}}, url = {{http://dx.doi.org/10.1002/pssr.201307251}}, doi = {{10.1002/pssr.201307251}}, volume = {{7}}, year = {{2013}}, }