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Zincblende-to-wurtzite interface improvement by group III loading in Au-seeded GaAs nanowires

Jacobsson, Daniel LU ; Lehmann, Sebastian LU and Dick Thelander, Kimberly LU (2013) In Physica Status Solidi. Rapid Research Letters 7(10). p.855-859
Abstract
Achieving control of the crystal structure is essential in III-V nanowires, since twin defects, stacking faults and uncontrolled zincblende-wurtzite polytypism could have detrimental effects on the physical properties. In addition, precise control of the crystal phases also opens up the possibility of homomaterial bandgap engineering. Here, we show by ex situ chemical analysis of the alloy seed particle that Ga-rich conditions are required for growth of wurtzite GaAs nanowires using Au seed particles in MOVPE. Based on this understanding, we propose and demonstrate a growth procedure to significantly improve the crystal structure quality of the zincblende-to-wurtzite transition in GaAs nanowire heterostructures. ((c) 2013 WILEY-VCH Verlag... (More)
Achieving control of the crystal structure is essential in III-V nanowires, since twin defects, stacking faults and uncontrolled zincblende-wurtzite polytypism could have detrimental effects on the physical properties. In addition, precise control of the crystal phases also opens up the possibility of homomaterial bandgap engineering. Here, we show by ex situ chemical analysis of the alloy seed particle that Ga-rich conditions are required for growth of wurtzite GaAs nanowires using Au seed particles in MOVPE. Based on this understanding, we propose and demonstrate a growth procedure to significantly improve the crystal structure quality of the zincblende-to-wurtzite transition in GaAs nanowire heterostructures. ((c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) (Less)
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author
; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
GaAs, nanowires, polytypism, heterostructures, metal-organic vapour, phase epitaxy
in
Physica Status Solidi. Rapid Research Letters
volume
7
issue
10
pages
855 - 859
publisher
John Wiley & Sons Inc.
external identifiers
  • wos:000328484500016
  • scopus:84885835510
ISSN
1862-6254
DOI
10.1002/pssr.201307251
language
English
LU publication?
yes
id
839f4463-ca7e-470b-949a-5fd02d5a6733 (old id 4272539)
date added to LUP
2016-04-01 10:28:34
date last changed
2022-03-19 21:10:56
@article{839f4463-ca7e-470b-949a-5fd02d5a6733,
  abstract     = {{Achieving control of the crystal structure is essential in III-V nanowires, since twin defects, stacking faults and uncontrolled zincblende-wurtzite polytypism could have detrimental effects on the physical properties. In addition, precise control of the crystal phases also opens up the possibility of homomaterial bandgap engineering. Here, we show by ex situ chemical analysis of the alloy seed particle that Ga-rich conditions are required for growth of wurtzite GaAs nanowires using Au seed particles in MOVPE. Based on this understanding, we propose and demonstrate a growth procedure to significantly improve the crystal structure quality of the zincblende-to-wurtzite transition in GaAs nanowire heterostructures. ((c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)}},
  author       = {{Jacobsson, Daniel and Lehmann, Sebastian and Dick Thelander, Kimberly}},
  issn         = {{1862-6254}},
  keywords     = {{GaAs; nanowires; polytypism; heterostructures; metal-organic vapour; phase epitaxy}},
  language     = {{eng}},
  number       = {{10}},
  pages        = {{855--859}},
  publisher    = {{John Wiley & Sons Inc.}},
  series       = {{Physica Status Solidi. Rapid Research Letters}},
  title        = {{Zincblende-to-wurtzite interface improvement by group III loading in Au-seeded GaAs nanowires}},
  url          = {{http://dx.doi.org/10.1002/pssr.201307251}},
  doi          = {{10.1002/pssr.201307251}},
  volume       = {{7}},
  year         = {{2013}},
}