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Polarity dependent strongly inhomogeneous In-incorporation in GaN nanocolumns

Oppo, C. I.; Malindretos, J.; Zamani, R. R. LU ; Broxtermann, D.; Segura-Ruiz, J.; Martinez-Criado, G.; Ricci, P. C. and Rizzi, A. (2016) In Nanotechnology 27(35).
Abstract

In this work, GaN/InGaN/GaN nanocolumns (NCs) have been grown by molecular beam epitaxy. Selective area growth (SAG) and self-organized growth (SOG) were performed simultaneously in patterned and unpatterned regions of the same substrate, respectively. The resulting structures show different tip morphologies and structural properties due to the different polarity along the growth direction, namely Ga-polar with r-plane faceted tips for the SAG NCs and N-polar with c-plane top facet for the SOG ones. When growing Ga-polar GaN/InGaN NCs, no indium is incorporated at a substrate temperature of °C. Rather, indium incorporation takes place under the same growth conditions on the N-polar NCs. The In-incorporation is investigated by means of... (More)

In this work, GaN/InGaN/GaN nanocolumns (NCs) have been grown by molecular beam epitaxy. Selective area growth (SAG) and self-organized growth (SOG) were performed simultaneously in patterned and unpatterned regions of the same substrate, respectively. The resulting structures show different tip morphologies and structural properties due to the different polarity along the growth direction, namely Ga-polar with r-plane faceted tips for the SAG NCs and N-polar with c-plane top facet for the SOG ones. When growing Ga-polar GaN/InGaN NCs, no indium is incorporated at a substrate temperature of °C. Rather, indium incorporation takes place under the same growth conditions on the N-polar NCs. The In-incorporation is investigated by means of nano x-ray fluorescence and diffraction, high-angle annular dark-field scanning transmission electron microscopy and high-resolution transmission electron microscopy.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
GaN, InGaN, MBE, nano columns, nano XRD, nano XRF
in
Nanotechnology
volume
27
issue
35
publisher
IOP Publishing
external identifiers
  • scopus:84984611980
  • wos:000383964000021
ISSN
0957-4484
DOI
10.1088/0957-4484/27/35/355703
language
English
LU publication?
yes
id
846ba974-bf55-4520-a033-ff07fa7c4a19
date added to LUP
2017-01-09 08:57:58
date last changed
2017-09-18 11:35:23
@article{846ba974-bf55-4520-a033-ff07fa7c4a19,
  abstract     = {<p>In this work, GaN/InGaN/GaN nanocolumns (NCs) have been grown by molecular beam epitaxy. Selective area growth (SAG) and self-organized growth (SOG) were performed simultaneously in patterned and unpatterned regions of the same substrate, respectively. The resulting structures show different tip morphologies and structural properties due to the different polarity along the growth direction, namely Ga-polar with r-plane faceted tips for the SAG NCs and N-polar with c-plane top facet for the SOG ones. When growing Ga-polar GaN/InGaN NCs, no indium is incorporated at a substrate temperature of °C. Rather, indium incorporation takes place under the same growth conditions on the N-polar NCs. The In-incorporation is investigated by means of nano x-ray fluorescence and diffraction, high-angle annular dark-field scanning transmission electron microscopy and high-resolution transmission electron microscopy.</p>},
  articleno    = {355703},
  author       = {Oppo, C. I. and Malindretos, J. and Zamani, R. R. and Broxtermann, D. and Segura-Ruiz, J. and Martinez-Criado, G. and Ricci, P. C. and Rizzi, A.},
  issn         = {0957-4484},
  keyword      = {GaN,InGaN,MBE,nano columns,nano XRD,nano XRF},
  language     = {eng},
  month        = {07},
  number       = {35},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Polarity dependent strongly inhomogeneous In-incorporation in GaN nanocolumns},
  url          = {http://dx.doi.org/10.1088/0957-4484/27/35/355703},
  volume       = {27},
  year         = {2016},
}