In situ passivation of GaxIn(1−x)P nanowires using radial AlyIn(1−y)P shells grown by MOVPE

Zeng, Xulu; Zhang, Wei; Zou, Xianshao; Su, Xiaojun; Yartsev, Arkady; Borgström, Magnus T.

In situ passivation of Ga_xIn_(1−x)P nanowires using radial Al_yIn_(1−y)P shells grown by MOVPE

Mark

Zeng, Xulu ^LU ; Zhang, Wei ^LU ; Zou, Xianshao ^LU ; Su, Xiaojun ^LU ; Yartsev, Arkady ^LU

and Borgström, Magnus T. ^LU (2021) In Nanotechnology 32(42).

Abstract: Ga_xIn₍₁₋x₎P nanowires with suitable bandgap (1.35-2.26 eV) ranging from the visible to near-infrared wavelength have great potential in optoelectronic applications. Due to the large surface-to-volume ratio of nanowires, the surface states become a pronounced factor affecting device performance. In this work, we performed a systematic study of Ga_xIn₍₁₋x₎P nanowires' surface passivation, utilizing Al_yIn₍₁₋y₎P shells grown in situ by using a metal-organic vapor phase epitaxy system. Time-resolved photoinduced luminescence and time-resolved THz spectroscopy measurements were performed to study the nanowires' carrier recombination processes.... (More); Ga_xIn₍₁₋x₎P nanowires with suitable bandgap (1.35-2.26 eV) ranging from the visible to near-infrared wavelength have great potential in optoelectronic applications. Due to the large surface-to-volume ratio of nanowires, the surface states become a pronounced factor affecting device performance. In this work, we performed a systematic study of Ga_xIn₍₁₋x₎P nanowires' surface passivation, utilizing Al_yIn₍₁₋y₎P shells grown in situ by using a metal-organic vapor phase epitaxy system. Time-resolved photoinduced luminescence and time-resolved THz spectroscopy measurements were performed to study the nanowires' carrier recombination processes. Compared to the bare Ga_0.41In_0.59P nanowires without shells, the hole and electron lifetime of the nanowires with the Al_0.36In_0.64P shells are found to be larger by 40 and 1.1 times, respectively, demonstrating effective surface passivation of trap states. When shells with higher Al composition were grown, both lifetimes of free holes and electrons decreased prominently. We attribute the acceleration of PL decay to an increase in the trap states' density due to the formation of defects, including the polycrystalline and oxidized amorphous areas in these samples. Furthermore, in a separate set of samples, we varied the shell thickness. We observed that a certain shell thickness of approximately ∼20 nm is needed for efficient passivation of Ga_0.31In_0.69P nanowires. The photoconductivity of the sample with a shell thickness of 23 nm decays 10 times slower compared with that of the bare core nanowires. We concluded that both the hole and electron trapping and the overall charge recombination in Ga_xIn₍₁₋x₎P nanowires can be substantially passivated through growing an Al_yIn₍₁₋y₎P shell with appropriate Al composition and thickness. Therefore, we have developed an effective in situ surface passivation of Ga_xIn₍₁₋x₎P nanowires by use of Al_yIn₍₁₋y₎P shells, paving the way to high-performance Ga_xIn₍₁₋x₎P nanowires optoelectronic devices.
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Please use this url to cite or link to this publication: https://lup.lub.lu.se/record/848157ed-d7c3-481e-81d4-d169f38dae26

author

Zeng, Xulu ^LU ; Zhang, Wei ^LU ; Zou, Xianshao ^LU ; Su, Xiaojun ^LU ; Yartsev, Arkady ^LU

and Borgström, Magnus T. ^LU

organization

publishing date

2021-10-15

type

Contribution to journal

publication status

published

subject

keywords

AlInP, GaInP, In situ, MOVPE, Nanowire, Passivation

in

Nanotechnology

volume

32

issue

42

article number

425705

publisher

IOP Publishing

external identifiers

pmid:34229309
scopus:85112132243

ISSN

0957-4484

DOI

10.1088/1361-6528/ac1198

language

English

LU publication?

yes

id

848157ed-d7c3-481e-81d4-d169f38dae26

date added to LUP

2021-09-03 16:39:54

date last changed

2024-04-20 10:40:57

@article{848157ed-d7c3-481e-81d4-d169f38dae26,
  abstract     = {{<p>Ga<sub>x</sub>In<sub>(1−</sub>x<sub>)</sub>P nanowires with suitable bandgap (1.35-2.26 eV) ranging from the visible to near-infrared wavelength have great potential in optoelectronic applications. Due to the large surface-to-volume ratio of nanowires, the surface states become a pronounced factor affecting device performance. In this work, we performed a systematic study of Ga<sub>x</sub>In<sub>(1−</sub>x<sub>)</sub>P nanowires' surface passivation, utilizing Al<sub>y</sub>In<sub>(1−</sub>y<sub>)</sub>P shells grown in situ by using a metal-organic vapor phase epitaxy system. Time-resolved photoinduced luminescence and time-resolved THz spectroscopy measurements were performed to study the nanowires' carrier recombination processes. Compared to the bare Ga<sub>0.41</sub>In<sub>0.59</sub>P nanowires without shells, the hole and electron lifetime of the nanowires with the Al<sub>0.36</sub>In<sub>0.64</sub>P shells are found to be larger by 40 and 1.1 times, respectively, demonstrating effective surface passivation of trap states. When shells with higher Al composition were grown, both lifetimes of free holes and electrons decreased prominently. We attribute the acceleration of PL decay to an increase in the trap states' density due to the formation of defects, including the polycrystalline and oxidized amorphous areas in these samples. Furthermore, in a separate set of samples, we varied the shell thickness. We observed that a certain shell thickness of approximately ∼20 nm is needed for efficient passivation of Ga<sub>0.31</sub>In<sub>0.69</sub>P nanowires. The photoconductivity of the sample with a shell thickness of 23 nm decays 10 times slower compared with that of the bare core nanowires. We concluded that both the hole and electron trapping and the overall charge recombination in Ga<sub>x</sub>In<sub>(1−</sub>x<sub>)</sub>P nanowires can be substantially passivated through growing an Al<sub>y</sub>In<sub>(1−</sub>y<sub>)</sub>P shell with appropriate Al composition and thickness. Therefore, we have developed an effective in situ surface passivation of Ga<sub>x</sub>In<sub>(1−</sub>x<sub>)</sub>P nanowires by use of Al<sub>y</sub>In<sub>(1−</sub>y<sub>)</sub>P shells, paving the way to high-performance Ga<sub>x</sub>In<sub>(1−</sub>x<sub>)</sub>P nanowires optoelectronic devices.</p>}},
  author       = {{Zeng, Xulu and Zhang, Wei and Zou, Xianshao and Su, Xiaojun and Yartsev, Arkady and Borgström, Magnus T.}},
  issn         = {{0957-4484}},
  keywords     = {{AlInP; GaInP; In situ; MOVPE; Nanowire; Passivation}},
  language     = {{eng}},
  month        = {{10}},
  number       = {{42}},
  publisher    = {{IOP Publishing}},
  series       = {{Nanotechnology}},
  title        = {{In situ passivation of Ga<sub>x</sub>In<sub>(1−x)</sub>P nanowires using radial Al<sub>y</sub>In<sub>(1−y)</sub>P shells grown by MOVPE}},
  url          = {{http://dx.doi.org/10.1088/1361-6528/ac1198}},
  doi          = {{10.1088/1361-6528/ac1198}},
  volume       = {{32}},
  year         = {{2021}},
}

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In situ passivation of Ga_xIn_(1−x)P nanowires using radial Al_yIn_(1−y)P shells grown by MOVPE