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Weak antilocalization and electron-electron interaction in coupled multiple-channel transport in a Bi2Se3 thin film.

Jing, Yumei ; Huang, Shaoyun ; Zhang, Kai ; Wu, Jinxiong ; Guo, Yunfan ; Peng, Hailin ; Liu, Zhongfan and Xu, Hongqi LU (2016) In Nanoscale 8(4). p.1879-1885
Abstract
The electron transport properties of a topological insulator Bi2Se3 thin film are studied in Hall-bar geometry. The film with a thickness of 10 nm is grown by van der Waals epitaxy on fluorophlogopite mica and Hall-bar devices are fabricated from the as-grown film directly on the mica substrate. Weak antilocalization and electron-electron interaction effects are observed and analyzed at low temperatures. The phase-coherence length extracted from the measured weak antilocalization characteristics shows a strong power-law increase with decreasing temperature and the transport in the film is shown to occur via coupled multiple (topological surface and bulk states) channels. The conductivity of the film shows a logarithmical decrease with... (More)
The electron transport properties of a topological insulator Bi2Se3 thin film are studied in Hall-bar geometry. The film with a thickness of 10 nm is grown by van der Waals epitaxy on fluorophlogopite mica and Hall-bar devices are fabricated from the as-grown film directly on the mica substrate. Weak antilocalization and electron-electron interaction effects are observed and analyzed at low temperatures. The phase-coherence length extracted from the measured weak antilocalization characteristics shows a strong power-law increase with decreasing temperature and the transport in the film is shown to occur via coupled multiple (topological surface and bulk states) channels. The conductivity of the film shows a logarithmical decrease with decreasing temperature and thus the electron-electron interaction plays a dominant role in quantum corrections to the conductivity of the film at low temperatures. (Less)
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author
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanoscale
volume
8
issue
4
pages
1879 - 1885
publisher
Royal Society of Chemistry
external identifiers
  • pmid:26733366
  • wos:000368860900012
  • scopus:84955449075
  • pmid:26733366
ISSN
2040-3372
DOI
10.1039/c5nr07296d
language
English
LU publication?
yes
id
850f504a-5cf1-40cd-8c99-8221c47ca9f6 (old id 8592988)
date added to LUP
2016-04-01 10:12:05
date last changed
2023-11-09 14:38:06
@article{850f504a-5cf1-40cd-8c99-8221c47ca9f6,
  abstract     = {{The electron transport properties of a topological insulator Bi2Se3 thin film are studied in Hall-bar geometry. The film with a thickness of 10 nm is grown by van der Waals epitaxy on fluorophlogopite mica and Hall-bar devices are fabricated from the as-grown film directly on the mica substrate. Weak antilocalization and electron-electron interaction effects are observed and analyzed at low temperatures. The phase-coherence length extracted from the measured weak antilocalization characteristics shows a strong power-law increase with decreasing temperature and the transport in the film is shown to occur via coupled multiple (topological surface and bulk states) channels. The conductivity of the film shows a logarithmical decrease with decreasing temperature and thus the electron-electron interaction plays a dominant role in quantum corrections to the conductivity of the film at low temperatures.}},
  author       = {{Jing, Yumei and Huang, Shaoyun and Zhang, Kai and Wu, Jinxiong and Guo, Yunfan and Peng, Hailin and Liu, Zhongfan and Xu, Hongqi}},
  issn         = {{2040-3372}},
  language     = {{eng}},
  number       = {{4}},
  pages        = {{1879--1885}},
  publisher    = {{Royal Society of Chemistry}},
  series       = {{Nanoscale}},
  title        = {{Weak antilocalization and electron-electron interaction in coupled multiple-channel transport in a Bi2Se3 thin film.}},
  url          = {{http://dx.doi.org/10.1039/c5nr07296d}},
  doi          = {{10.1039/c5nr07296d}},
  volume       = {{8}},
  year         = {{2016}},
}