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Weak antilocalization and electron-electron interaction in coupled multiple-channel transport in a Bi2Se3 thin film.

Jing, Yumei; Huang, Shaoyun; Zhang, Kai; Wu, Jinxiong; Guo, Yunfan; Peng, Hailin; Liu, Zhongfan and Xu, Hongqi LU (2016) In Nanoscale 8(4). p.1879-1885
Abstract
The electron transport properties of a topological insulator Bi2Se3 thin film are studied in Hall-bar geometry. The film with a thickness of 10 nm is grown by van der Waals epitaxy on fluorophlogopite mica and Hall-bar devices are fabricated from the as-grown film directly on the mica substrate. Weak antilocalization and electron-electron interaction effects are observed and analyzed at low temperatures. The phase-coherence length extracted from the measured weak antilocalization characteristics shows a strong power-law increase with decreasing temperature and the transport in the film is shown to occur via coupled multiple (topological surface and bulk states) channels. The conductivity of the film shows a logarithmical decrease with... (More)
The electron transport properties of a topological insulator Bi2Se3 thin film are studied in Hall-bar geometry. The film with a thickness of 10 nm is grown by van der Waals epitaxy on fluorophlogopite mica and Hall-bar devices are fabricated from the as-grown film directly on the mica substrate. Weak antilocalization and electron-electron interaction effects are observed and analyzed at low temperatures. The phase-coherence length extracted from the measured weak antilocalization characteristics shows a strong power-law increase with decreasing temperature and the transport in the film is shown to occur via coupled multiple (topological surface and bulk states) channels. The conductivity of the film shows a logarithmical decrease with decreasing temperature and thus the electron-electron interaction plays a dominant role in quantum corrections to the conductivity of the film at low temperatures. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanoscale
volume
8
issue
4
pages
1879 - 1885
publisher
Royal Society of Chemistry
external identifiers
  • pmid:26733366
  • wos:000368860900012
  • scopus:84955449075
ISSN
2040-3372
DOI
10.1039/c5nr07296d
language
English
LU publication?
yes
id
850f504a-5cf1-40cd-8c99-8221c47ca9f6 (old id 8592988)
date added to LUP
2016-02-11 12:08:17
date last changed
2017-07-23 03:10:04
@article{850f504a-5cf1-40cd-8c99-8221c47ca9f6,
  abstract     = {The electron transport properties of a topological insulator Bi2Se3 thin film are studied in Hall-bar geometry. The film with a thickness of 10 nm is grown by van der Waals epitaxy on fluorophlogopite mica and Hall-bar devices are fabricated from the as-grown film directly on the mica substrate. Weak antilocalization and electron-electron interaction effects are observed and analyzed at low temperatures. The phase-coherence length extracted from the measured weak antilocalization characteristics shows a strong power-law increase with decreasing temperature and the transport in the film is shown to occur via coupled multiple (topological surface and bulk states) channels. The conductivity of the film shows a logarithmical decrease with decreasing temperature and thus the electron-electron interaction plays a dominant role in quantum corrections to the conductivity of the film at low temperatures.},
  author       = {Jing, Yumei and Huang, Shaoyun and Zhang, Kai and Wu, Jinxiong and Guo, Yunfan and Peng, Hailin and Liu, Zhongfan and Xu, Hongqi},
  issn         = {2040-3372},
  language     = {eng},
  number       = {4},
  pages        = {1879--1885},
  publisher    = {Royal Society of Chemistry},
  series       = {Nanoscale},
  title        = {Weak antilocalization and electron-electron interaction in coupled multiple-channel transport in a Bi2Se3 thin film.},
  url          = {http://dx.doi.org/10.1039/c5nr07296d},
  volume       = {8},
  year         = {2016},
}