Morphology of ion irradiation induced nano-porous structures in Ge and Si1−xGex alloys
(2017) In Journal of Applied Physics 121(11).- Abstract
Crystalline Ge and Si1−xGex alloys (x = 0.83, 0.77) of (100) orientation were implanted with 140 keV Ge− ions at fluences between 5 × 1015 to 3 × 1017 ions/cm2, and at temperatures between 23 °C and 200 °C. The energy deposition of the ions leads to the formation of porous structures consisting of columnar pores separated by narrow sidewalls. Their sizes were characterized with transmission electron microscopy, scanning electron microscopy, and small angle x-ray scattering. We show that the pore radius does not depend significantly on the ion fluence above 5 × 1015 ions/cm2, i.e., when the pores have already developed, yet the pore depth increases... (More)
Crystalline Ge and Si1−xGex alloys (x = 0.83, 0.77) of (100) orientation were implanted with 140 keV Ge− ions at fluences between 5 × 1015 to 3 × 1017 ions/cm2, and at temperatures between 23 °C and 200 °C. The energy deposition of the ions leads to the formation of porous structures consisting of columnar pores separated by narrow sidewalls. Their sizes were characterized with transmission electron microscopy, scanning electron microscopy, and small angle x-ray scattering. We show that the pore radius does not depend significantly on the ion fluence above 5 × 1015 ions/cm2, i.e., when the pores have already developed, yet the pore depth increases from 31 to 516 nm with increasing fluence. The sidewall thickness increases slightly with increasing Si content, while both the pore radius and the sidewall thickness increase at elevated implantation temperatures.
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- author
- Alkhaldi, H. S. ; Kremer, F. ; Mota-Santiago, P. LU ; Nadzri, A. ; Schauries, D. ; Kirby, N. ; Ridgway, M. C. and Kluth, P.
- publishing date
- 2017-03-21
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Journal of Applied Physics
- volume
- 121
- issue
- 11
- article number
- 115705
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:85016140605
- ISSN
- 0021-8979
- DOI
- 10.1063/1.4978592
- language
- English
- LU publication?
- no
- additional info
- Publisher Copyright: © 2017 Author(s).
- id
- 872c910a-3f90-41f0-bb88-a4fceafc6806
- date added to LUP
- 2023-04-05 16:16:42
- date last changed
- 2023-05-30 11:03:27
@article{872c910a-3f90-41f0-bb88-a4fceafc6806,
abstract = {{<p>Crystalline Ge and Si<sub>1−x</sub>Ge<sub>x</sub> alloys (x = 0.83, 0.77) of (100) orientation were implanted with 140 keV Ge<sup>−</sup> ions at fluences between 5 × 10<sup>15</sup> to 3 × 10<sup>17</sup> ions/cm<sup>2</sup>, and at temperatures between 23 °C and 200 °C. The energy deposition of the ions leads to the formation of porous structures consisting of columnar pores separated by narrow sidewalls. Their sizes were characterized with transmission electron microscopy, scanning electron microscopy, and small angle x-ray scattering. We show that the pore radius does not depend significantly on the ion fluence above 5 × 10<sup>15</sup> ions/cm<sup>2</sup>, i.e., when the pores have already developed, yet the pore depth increases from 31 to 516 nm with increasing fluence. The sidewall thickness increases slightly with increasing Si content, while both the pore radius and the sidewall thickness increase at elevated implantation temperatures.</p>}},
author = {{Alkhaldi, H. S. and Kremer, F. and Mota-Santiago, P. and Nadzri, A. and Schauries, D. and Kirby, N. and Ridgway, M. C. and Kluth, P.}},
issn = {{0021-8979}},
language = {{eng}},
month = {{03}},
number = {{11}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Journal of Applied Physics}},
title = {{Morphology of ion irradiation induced nano-porous structures in Ge and Si<sub>1−x</sub>Ge<sub>x</sub> alloys}},
url = {{http://dx.doi.org/10.1063/1.4978592}},
doi = {{10.1063/1.4978592}},
volume = {{121}},
year = {{2017}},
}