The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells?
(2011) In Applied Physics Letters 98(18).- Abstract
- It is widely believed that the light induced degradation of crystalline silicon solar cells is due to the formation of a BsO2i recombination center created by the optically excited migration of the oxygen dimer (charge-state-driven motion). In this letter the concentration dependence of the neutral state of O-2i on [O-i] in p- and n-type Cz-Si has been determined using infrared absorption. A systematic search for the absorption signature of the dimer in the doubly positively charged state has been unsuccessful. These data strongly suggest that charge-state-driven motion (Bourgoin-Corbett mechanism) of the oxygen dimer cannot occur in typical solar silicon and hence bring into question the accepted degradation mechanism. (C) 2011 American... (More)
- It is widely believed that the light induced degradation of crystalline silicon solar cells is due to the formation of a BsO2i recombination center created by the optically excited migration of the oxygen dimer (charge-state-driven motion). In this letter the concentration dependence of the neutral state of O-2i on [O-i] in p- and n-type Cz-Si has been determined using infrared absorption. A systematic search for the absorption signature of the dimer in the doubly positively charged state has been unsuccessful. These data strongly suggest that charge-state-driven motion (Bourgoin-Corbett mechanism) of the oxygen dimer cannot occur in typical solar silicon and hence bring into question the accepted degradation mechanism. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3584138] (Less)
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- author
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 98
- issue
- 18
- article number
- 182101
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000290392300027
- scopus:79957475711
- ISSN
- 0003-6951
- DOI
- 10.1063/1.3584138
- language
- English
- LU publication?
- yes
- id
- 873441f0-019f-48c1-aa18-0d0d0fb4a173 (old id 1987055)
- date added to LUP
- 2016-04-01 10:12:11
- date last changed
- 2022-04-27 19:37:57
@article{873441f0-019f-48c1-aa18-0d0d0fb4a173,
abstract = {{It is widely believed that the light induced degradation of crystalline silicon solar cells is due to the formation of a BsO2i recombination center created by the optically excited migration of the oxygen dimer (charge-state-driven motion). In this letter the concentration dependence of the neutral state of O-2i on [O-i] in p- and n-type Cz-Si has been determined using infrared absorption. A systematic search for the absorption signature of the dimer in the doubly positively charged state has been unsuccessful. These data strongly suggest that charge-state-driven motion (Bourgoin-Corbett mechanism) of the oxygen dimer cannot occur in typical solar silicon and hence bring into question the accepted degradation mechanism. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3584138]}},
author = {{Murin, L. I. and Tolkacheva, E. A. and Markevich, V. P. and Peaker, A. R. and Hamilton, B. and Monakhov, E. and Svensson, B. G. and Lindström, Lennart and Santos, P. and Coutinho, J. and Carvalho, A.}},
issn = {{0003-6951}},
language = {{eng}},
number = {{18}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells?}},
url = {{http://dx.doi.org/10.1063/1.3584138}},
doi = {{10.1063/1.3584138}},
volume = {{98}},
year = {{2011}},
}