Statistical mechanics of band states and impurity states in semiconductors
(1981) In Journal of Physics C: Solid State Physics 14(31). p.45754601 Abstract (Swedish)
 Thermodynamic analogies have previously been invoked to interpret the temperature and pressuredependent electronic levels in a semiconductor as standard Gibbs free energies. In this paper it is shown by means of statistical mechanical arguments using the pressure ensemble that standard Gibbs free energies are the quantities determining equilibrium occupations of electronic levels and hence are the thermodynamic quantities that enter detailed balance relationships. Optical band gaps are identified with the 'nophonon line' gap for a transition in which the occupation numbers for the phonons and remaining electrons are unchanged. An exact expression for no phonon optical transition energies is given. It is shown rigorously that the optical... (More)
 Thermodynamic analogies have previously been invoked to interpret the temperature and pressuredependent electronic levels in a semiconductor as standard Gibbs free energies. In this paper it is shown by means of statistical mechanical arguments using the pressure ensemble that standard Gibbs free energies are the quantities determining equilibrium occupations of electronic levels and hence are the thermodynamic quantities that enter detailed balance relationships. Optical band gaps are identified with the 'nophonon line' gap for a transition in which the occupation numbers for the phonons and remaining electrons are unchanged. An exact expression for no phonon optical transition energies is given. It is shown rigorously that the optical nophononline energy is identical to the corresponding freeenergy change for any transition between band states and also for transitions involving localised states provided: (i) the effects of electronic degeneracy changes are excluded from the free energy definition; (ii) the localised state is not associated with a local lattice mode. (Less)
Please use this url to cite or link to this publication:
http://lup.lub.lu.se/record/8772569
 author
 Almbladh, CarlOlof ^{LU} and Rees, G J
 organization
 publishing date
 1981
 type
 Contribution to journal
 publication status
 published
 subject
 in
 Journal of Physics C: Solid State Physics
 volume
 14
 issue
 31
 pages
 4575  4601
 publisher
 Institute of Physics
 external identifiers

 scopus:3142728376
 ISSN
 00223719
 language
 English
 LU publication?
 yes
 id
 f12a5eabb00a48b1ae5cae8561b0f71b (old id 8772569)
 date added to LUP
 20160227 01:14:59
 date last changed
 20170101 08:19:50
@article{f12a5eabb00a48b1ae5cae8561b0f71b, abstract = {Thermodynamic analogies have previously been invoked to interpret the temperature and pressuredependent electronic levels in a semiconductor as standard Gibbs free energies. In this paper it is shown by means of statistical mechanical arguments using the pressure ensemble that standard Gibbs free energies are the quantities determining equilibrium occupations of electronic levels and hence are the thermodynamic quantities that enter detailed balance relationships. Optical band gaps are identified with the 'nophonon line' gap for a transition in which the occupation numbers for the phonons and remaining electrons are unchanged. An exact expression for no phonon optical transition energies is given. It is shown rigorously that the optical nophononline energy is identical to the corresponding freeenergy change for any transition between band states and also for transitions involving localised states provided: (i) the effects of electronic degeneracy changes are excluded from the free energy definition; (ii) the localised state is not associated with a local lattice mode.}, author = {Almbladh, CarlOlof and Rees, G J}, issn = {00223719}, language = {eng}, number = {31}, pages = {45754601}, publisher = {Institute of Physics}, series = {Journal of Physics C: Solid State Physics}, title = {Statistical mechanics of band states and impurity states in semiconductors}, volume = {14}, year = {1981}, }