Advanced

Symmetric relaxation around interstitial 3d impurities in silicon

Lindefelt, Ulf and Zunger, Alex (1985) In Proceedings of the 17th International Conference on the Physics of Semiconductors p.729-732
Abstract
EPR studies suggest that most transition atom impurities in silicon occupy the tetrahedral interstitial (Ti) site, preserving the Td symmetry of the host (1). The authors give, within the local-density approximation, a unified description of the electronic structure and `breathing-mode' relaxation of tetrahedral interstitial Cr, Mn, Fe, Co and Ni impurities in bulk silicon.(7 refs)
Please use this url to cite or link to this publication:
author
publishing date
type
Contribution to journal
publication status
published
subject
in
Proceedings of the 17th International Conference on the Physics of Semiconductors
pages
729 - 732
publisher
Springer Verlag
external identifiers
  • Scopus:0022247793
language
English
LU publication?
no
id
8cee2f8e-9718-4e22-80de-bcbba5564aae (old id 8831965)
date added to LUP
2016-03-04 09:43:41
date last changed
2017-01-01 08:05:10
@article{8cee2f8e-9718-4e22-80de-bcbba5564aae,
  abstract     = {EPR studies suggest that most transition atom impurities in silicon occupy the tetrahedral interstitial (Ti) site, preserving the Td symmetry of the host (1). The authors give, within the local-density approximation, a unified description of the electronic structure and `breathing-mode' relaxation of tetrahedral interstitial Cr, Mn, Fe, Co and Ni impurities in bulk silicon.(7 refs)},
  author       = {Lindefelt, Ulf and Zunger, Alex},
  language     = {eng},
  pages        = {729--732},
  publisher    = {Springer Verlag},
  series       = {Proceedings of the 17th International Conference on the Physics of Semiconductors},
  title        = {Symmetric relaxation around interstitial 3d impurities in silicon},
  year         = {1985},
}