Ultrafast Dynamics of Hole Injection and Recombination in Organometal Halide Perovskite Using Nickel Oxide as p-Type Contact Electrode.
(2016) In The Journal of Physical Chemistry Letters 7. p.1096-1101- Abstract
- There is a mounting effort to use nickel oxide (NiO) as p-type selective electrode for organometal halide perovskite-based solar cells. Recently, an overall power conversion efficiency using this hole acceptor has reached 18%. However, ultrafast spectroscopic investigations on the mechanism of charge injection as well as recombination dynamics have yet to be studied and understood. Using time-resolved terahertz spectroscopy, we show that hole transfer is complete on the subpicosecond time scale, driven by the favorable band alignment between the valence bands of perovskite and NiO nanoparticles (NiO(np)). Recombination time between holes injected into NiO(np) and mobile electrons in the perovskite material is shown to be hundreds of... (More)
- There is a mounting effort to use nickel oxide (NiO) as p-type selective electrode for organometal halide perovskite-based solar cells. Recently, an overall power conversion efficiency using this hole acceptor has reached 18%. However, ultrafast spectroscopic investigations on the mechanism of charge injection as well as recombination dynamics have yet to be studied and understood. Using time-resolved terahertz spectroscopy, we show that hole transfer is complete on the subpicosecond time scale, driven by the favorable band alignment between the valence bands of perovskite and NiO nanoparticles (NiO(np)). Recombination time between holes injected into NiO(np) and mobile electrons in the perovskite material is shown to be hundreds of picoseconds to a few nanoseconds. Because of the low conductivity of NiO(np), holes are pinned at the interface, and it is electrons that determine the recombination rate. This recombination competes with charge collection and therefore must be minimized. Doping NiO to promote higher mobility of holes is desirable in order to prevent back recombination. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/8856224
- author
- Corani, Alice
LU
; Li, Ming-Hsien
; Shen, Po-Shen
; Chen, Peter
; Guo, Tzung-Fang
; El Nahhas, Amal
LU
; Zheng, Kaibo
LU
; Yartsev, Arkady
LU
; Sundström, Villy LU and Ponseca, Carlito LU
- organization
- publishing date
- 2016
- type
- Contribution to journal
- publication status
- published
- subject
- in
- The Journal of Physical Chemistry Letters
- volume
- 7
- pages
- 1096 - 1101
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- pmid:26942559
- wos:000373867600002
- scopus:84964562889
- pmid:26942559
- ISSN
- 1948-7185
- DOI
- 10.1021/acs.jpclett.6b00238
- language
- English
- LU publication?
- yes
- id
- c8fda924-cd4b-4c4f-9952-624440afac6e (old id 8856224)
- date added to LUP
- 2016-04-01 13:22:51
- date last changed
- 2025-04-04 14:11:27
@article{c8fda924-cd4b-4c4f-9952-624440afac6e, abstract = {{There is a mounting effort to use nickel oxide (NiO) as p-type selective electrode for organometal halide perovskite-based solar cells. Recently, an overall power conversion efficiency using this hole acceptor has reached 18%. However, ultrafast spectroscopic investigations on the mechanism of charge injection as well as recombination dynamics have yet to be studied and understood. Using time-resolved terahertz spectroscopy, we show that hole transfer is complete on the subpicosecond time scale, driven by the favorable band alignment between the valence bands of perovskite and NiO nanoparticles (NiO(np)). Recombination time between holes injected into NiO(np) and mobile electrons in the perovskite material is shown to be hundreds of picoseconds to a few nanoseconds. Because of the low conductivity of NiO(np), holes are pinned at the interface, and it is electrons that determine the recombination rate. This recombination competes with charge collection and therefore must be minimized. Doping NiO to promote higher mobility of holes is desirable in order to prevent back recombination.}}, author = {{Corani, Alice and Li, Ming-Hsien and Shen, Po-Shen and Chen, Peter and Guo, Tzung-Fang and El Nahhas, Amal and Zheng, Kaibo and Yartsev, Arkady and Sundström, Villy and Ponseca, Carlito}}, issn = {{1948-7185}}, language = {{eng}}, pages = {{1096--1101}}, publisher = {{The American Chemical Society (ACS)}}, series = {{The Journal of Physical Chemistry Letters}}, title = {{Ultrafast Dynamics of Hole Injection and Recombination in Organometal Halide Perovskite Using Nickel Oxide as p-Type Contact Electrode.}}, url = {{http://dx.doi.org/10.1021/acs.jpclett.6b00238}}, doi = {{10.1021/acs.jpclett.6b00238}}, volume = {{7}}, year = {{2016}}, }