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Structural and optical characterization of Mg-doped GaAs nanowires grown on GaAs and Si substrates

Falcao, B. P. ; Leitao, J. P. ; Correia, M. R. ; Soares, M. R. ; Morales, F. M. ; Manuel, J. M. ; Garcia, R. ; Gustafsson, Anders LU ; Moreira, M. V. B. and de Oliveira, A. G. , et al. (2013) In Applied Physics Reviews 114(18).
Abstract
We report an investigation on the morphological, structural, and optical properties of large size wurtzite GaAs nanowires, low doped with Mg, grown on GaAs(111) B and Si(111) substrates. A higher density of vertical nanowires was observed when grown upon GaAs(111) B. Very thin zinc-blende segments are observed along the axis of the nanowires with a slightly higher linear density being found on the nanowires grown on Si(111). Low temperature cathodoluminescence and photoluminescence measurements reveal an emission in the range 1.40-1.52 eV related with the spatial localization of the charge carriers at the interfaces of the two crystalline phases. Mg related emission is evidenced by cathodoluminescence performed on the GaAs epilayer.... (More)
We report an investigation on the morphological, structural, and optical properties of large size wurtzite GaAs nanowires, low doped with Mg, grown on GaAs(111) B and Si(111) substrates. A higher density of vertical nanowires was observed when grown upon GaAs(111) B. Very thin zinc-blende segments are observed along the axis of the nanowires with a slightly higher linear density being found on the nanowires grown on Si(111). Low temperature cathodoluminescence and photoluminescence measurements reveal an emission in the range 1.40-1.52 eV related with the spatial localization of the charge carriers at the interfaces of the two crystalline phases. Mg related emission is evidenced by cathodoluminescence performed on the GaAs epilayer. However, no direct evidence for a Mg related emission is found for the nanowires. The excitation power dependency on both peak energy and intensity of the photoluminescence gives a clear evidence for the type II nature of the radiative transitions. From the temperature dependence on the photoluminescence intensity, non-radiative de-excitation channels with different activation energies were found. The fact that the estimated energies for the escape of the electron are higher in the nanowires grown on Si(111) suggests the presence of wider zinc-blende segments. (C) 2013 AIP Publishing LLC. (Less)
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Applied Physics Reviews
volume
114
issue
18
article number
183508
publisher
American Institute of Physics
external identifiers
  • wos:000327261800019
  • scopus:84887873500
ISSN
0021-8979
DOI
10.1063/1.4829455
language
English
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yes
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88b13070-59d2-405c-8630-50ebea246486 (old id 4273165)
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2016-04-01 10:40:00
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@article{88b13070-59d2-405c-8630-50ebea246486,
  abstract     = {We report an investigation on the morphological, structural, and optical properties of large size wurtzite GaAs nanowires, low doped with Mg, grown on GaAs(111) B and Si(111) substrates. A higher density of vertical nanowires was observed when grown upon GaAs(111) B. Very thin zinc-blende segments are observed along the axis of the nanowires with a slightly higher linear density being found on the nanowires grown on Si(111). Low temperature cathodoluminescence and photoluminescence measurements reveal an emission in the range 1.40-1.52 eV related with the spatial localization of the charge carriers at the interfaces of the two crystalline phases. Mg related emission is evidenced by cathodoluminescence performed on the GaAs epilayer. However, no direct evidence for a Mg related emission is found for the nanowires. The excitation power dependency on both peak energy and intensity of the photoluminescence gives a clear evidence for the type II nature of the radiative transitions. From the temperature dependence on the photoluminescence intensity, non-radiative de-excitation channels with different activation energies were found. The fact that the estimated energies for the escape of the electron are higher in the nanowires grown on Si(111) suggests the presence of wider zinc-blende segments. (C) 2013 AIP Publishing LLC.},
  author       = {Falcao, B. P. and Leitao, J. P. and Correia, M. R. and Soares, M. R. and Morales, F. M. and Manuel, J. M. and Garcia, R. and Gustafsson, Anders and Moreira, M. V. B. and de Oliveira, A. G. and Gonzalez, J. C.},
  issn         = {0021-8979},
  language     = {eng},
  number       = {18},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Reviews},
  title        = {Structural and optical characterization of Mg-doped GaAs nanowires grown on GaAs and Si substrates},
  url          = {https://lup.lub.lu.se/search/ws/files/2037798/4294373.pdf},
  doi          = {10.1063/1.4829455},
  volume       = {114},
  year         = {2013},
}