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Intercalation of graphene on SiC(0001) via ion implantation

Stöhr, Alexander; Forti, Stiven; Link, Stefan; Zakharov, Alexei A. LU ; Kern, Klaus; Starke, Ulrich and Benia, Hadj M. (2016) In Physical Review B 94(8).
Abstract

Electronic devices based on graphene technology are catching on rapidly and the ability to engineer graphene properties at the nanoscale is becoming, more than ever, indispensable. Here, we present a procedure of graphene functionalization on SiC(0001) that paves the way towards the fabrication of complex graphene electronic chips. The procedure resides on the well-known ion-implantation technique. The efficiency of the working principle is demonstrated by the intercalation of the epitaxial graphene layer on SiC(0001) with Bi atoms, which was not possible following standard procedures. The investigation of the obtained graphene system reveals no clear spin-orbit coupling enhancement expected by theory in addition to the presence of... (More)

Electronic devices based on graphene technology are catching on rapidly and the ability to engineer graphene properties at the nanoscale is becoming, more than ever, indispensable. Here, we present a procedure of graphene functionalization on SiC(0001) that paves the way towards the fabrication of complex graphene electronic chips. The procedure resides on the well-known ion-implantation technique. The efficiency of the working principle is demonstrated by the intercalation of the epitaxial graphene layer on SiC(0001) with Bi atoms, which was not possible following standard procedures. The investigation of the obtained graphene system reveals no clear spin-orbit coupling enhancement expected by theory in addition to the presence of residual structural defects. Our graphene/SiC(0001) intercalation procedure puts forward the ion-beam lithography to nanostructure and functionalize desired graphene chips.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B
volume
94
issue
8
publisher
American Physical Society
external identifiers
  • scopus:84985987214
  • wos:000383030900006
ISSN
1098-0121
DOI
10.1103/PhysRevB.94.085431
language
English
LU publication?
yes
id
8bc4d28b-5f6b-4167-a326-facfe4580b58
date added to LUP
2016-11-29 15:49:01
date last changed
2017-06-25 04:56:32
@article{8bc4d28b-5f6b-4167-a326-facfe4580b58,
  abstract     = {<p>Electronic devices based on graphene technology are catching on rapidly and the ability to engineer graphene properties at the nanoscale is becoming, more than ever, indispensable. Here, we present a procedure of graphene functionalization on SiC(0001) that paves the way towards the fabrication of complex graphene electronic chips. The procedure resides on the well-known ion-implantation technique. The efficiency of the working principle is demonstrated by the intercalation of the epitaxial graphene layer on SiC(0001) with Bi atoms, which was not possible following standard procedures. The investigation of the obtained graphene system reveals no clear spin-orbit coupling enhancement expected by theory in addition to the presence of residual structural defects. Our graphene/SiC(0001) intercalation procedure puts forward the ion-beam lithography to nanostructure and functionalize desired graphene chips.</p>},
  articleno    = {085431},
  author       = {Stöhr, Alexander and Forti, Stiven and Link, Stefan and Zakharov, Alexei A. and Kern, Klaus and Starke, Ulrich and Benia, Hadj M.},
  issn         = {1098-0121},
  language     = {eng},
  month        = {08},
  number       = {8},
  publisher    = {American Physical Society},
  series       = {Physical Review B},
  title        = {Intercalation of graphene on SiC(0001) via ion implantation},
  url          = {http://dx.doi.org/10.1103/PhysRevB.94.085431},
  volume       = {94},
  year         = {2016},
}