Symmetric relaxation around interstitial 3d impurities in silicon
(1985) In Proceedings of the 17th International Conference on the Physics of Semiconductors p.729-732- Abstract
- EPR studies suggest that most transition atom impurities in silicon occupy the tetrahedral interstitial (Ti) site, preserving the Td symmetry of the host (1). The authors give, within the local-density approximation, a unified description of the electronic structure and `breathing-mode' relaxation of tetrahedral interstitial Cr, Mn, Fe, Co and Ni impurities in bulk silicon.(7 refs)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/8831965
- author
- Lindefelt, Ulf and Zunger, Alex
- publishing date
- 1985
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Proceedings of the 17th International Conference on the Physics of Semiconductors
- pages
- 729 - 732
- publisher
- Springer
- external identifiers
-
- scopus:0022247793
- language
- English
- LU publication?
- no
- id
- 8cee2f8e-9718-4e22-80de-bcbba5564aae (old id 8831965)
- date added to LUP
- 2016-04-04 11:46:10
- date last changed
- 2021-01-03 06:29:08
@article{8cee2f8e-9718-4e22-80de-bcbba5564aae, abstract = {{EPR studies suggest that most transition atom impurities in silicon occupy the tetrahedral interstitial (Ti) site, preserving the Td symmetry of the host (1). The authors give, within the local-density approximation, a unified description of the electronic structure and `breathing-mode' relaxation of tetrahedral interstitial Cr, Mn, Fe, Co and Ni impurities in bulk silicon.(7 refs)}}, author = {{Lindefelt, Ulf and Zunger, Alex}}, language = {{eng}}, pages = {{729--732}}, publisher = {{Springer}}, series = {{Proceedings of the 17th International Conference on the Physics of Semiconductors}}, title = {{Symmetric relaxation around interstitial 3d impurities in silicon}}, year = {{1985}}, }