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Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells

Zakharova, A ; Yen, ST and Chao, Koung-An LU (2002) In Physical Review B (Condensed Matter and Materials Physics) 66(8).
Abstract
We investigate the hybridization of the electron, heavy-hole and/or light-hole dispersion relations in strained InAs/GaSb quantum wells. In the considered structures, the lowest electron level lies below several hole levels at zero in-plane wave vector k(parallel to), so that the anticrossings of subbands produce gaps in the in-plane dispersions. To calculate the electronic band structures of such quantum wells grown on different substrates, we use the eight-band k.p model and the scattering matrix method. We have found that the order of levels at the zone center (k(parallel to)=0), gap positions and magnitudes can change due to the lattice-mismatched strain. Strain can also enhance the hybridization of electron and light-hole states at... (More)
We investigate the hybridization of the electron, heavy-hole and/or light-hole dispersion relations in strained InAs/GaSb quantum wells. In the considered structures, the lowest electron level lies below several hole levels at zero in-plane wave vector k(parallel to), so that the anticrossings of subbands produce gaps in the in-plane dispersions. To calculate the electronic band structures of such quantum wells grown on different substrates, we use the eight-band k.p model and the scattering matrix method. We have found that the order of levels at the zone center (k(parallel to)=0), gap positions and magnitudes can change due to the lattice-mismatched strain. Strain can also enhance the hybridization of electron and light-hole states at k(parallel to)=0 considerably. In the structure with a thick InAs layer grown on GaSb, we have obtained a negative indirect gap in the in-plane dispersion resulting from the anticrossing of electronlike and highest heavy-hole-like subbands. If the substrate is InAs, the gap becomes direct and positive. This phenomenon can be treated as strain-induced semimetal-semiconductor phase transition. (Less)
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author
; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
66
issue
8
publisher
American Physical Society
external identifiers
  • wos:000177972500070
  • scopus:0037104321
ISSN
1098-0121
DOI
10.1103/PhysRevB.66.085312
language
English
LU publication?
yes
id
6bf1852c-40aa-4fe2-b3a8-f4f510f57e72 (old id 909707)
date added to LUP
2016-04-01 16:14:52
date last changed
2022-01-28 18:23:04
@article{6bf1852c-40aa-4fe2-b3a8-f4f510f57e72,
  abstract     = {{We investigate the hybridization of the electron, heavy-hole and/or light-hole dispersion relations in strained InAs/GaSb quantum wells. In the considered structures, the lowest electron level lies below several hole levels at zero in-plane wave vector k(parallel to), so that the anticrossings of subbands produce gaps in the in-plane dispersions. To calculate the electronic band structures of such quantum wells grown on different substrates, we use the eight-band k.p model and the scattering matrix method. We have found that the order of levels at the zone center (k(parallel to)=0), gap positions and magnitudes can change due to the lattice-mismatched strain. Strain can also enhance the hybridization of electron and light-hole states at k(parallel to)=0 considerably. In the structure with a thick InAs layer grown on GaSb, we have obtained a negative indirect gap in the in-plane dispersion resulting from the anticrossing of electronlike and highest heavy-hole-like subbands. If the substrate is InAs, the gap becomes direct and positive. This phenomenon can be treated as strain-induced semimetal-semiconductor phase transition.}},
  author       = {{Zakharova, A and Yen, ST and Chao, Koung-An}},
  issn         = {{1098-0121}},
  language     = {{eng}},
  number       = {{8}},
  publisher    = {{American Physical Society}},
  series       = {{Physical Review B (Condensed Matter and Materials Physics)}},
  title        = {{Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells}},
  url          = {{http://dx.doi.org/10.1103/PhysRevB.66.085312}},
  doi          = {{10.1103/PhysRevB.66.085312}},
  volume       = {{66}},
  year         = {{2002}},
}