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Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells

Zakharova, A; Yen, ST and Chao, Koung-An LU (2002) In Physical Review B (Condensed Matter and Materials Physics) 66(8).
Abstract
We investigate the hybridization of the electron, heavy-hole and/or light-hole dispersion relations in strained InAs/GaSb quantum wells. In the considered structures, the lowest electron level lies below several hole levels at zero in-plane wave vector k(parallel to), so that the anticrossings of subbands produce gaps in the in-plane dispersions. To calculate the electronic band structures of such quantum wells grown on different substrates, we use the eight-band k.p model and the scattering matrix method. We have found that the order of levels at the zone center (k(parallel to)=0), gap positions and magnitudes can change due to the lattice-mismatched strain. Strain can also enhance the hybridization of electron and light-hole states at... (More)
We investigate the hybridization of the electron, heavy-hole and/or light-hole dispersion relations in strained InAs/GaSb quantum wells. In the considered structures, the lowest electron level lies below several hole levels at zero in-plane wave vector k(parallel to), so that the anticrossings of subbands produce gaps in the in-plane dispersions. To calculate the electronic band structures of such quantum wells grown on different substrates, we use the eight-band k.p model and the scattering matrix method. We have found that the order of levels at the zone center (k(parallel to)=0), gap positions and magnitudes can change due to the lattice-mismatched strain. Strain can also enhance the hybridization of electron and light-hole states at k(parallel to)=0 considerably. In the structure with a thick InAs layer grown on GaSb, we have obtained a negative indirect gap in the in-plane dispersion resulting from the anticrossing of electronlike and highest heavy-hole-like subbands. If the substrate is InAs, the gap becomes direct and positive. This phenomenon can be treated as strain-induced semimetal-semiconductor phase transition. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
66
issue
8
publisher
American Physical Society
external identifiers
  • wos:000177972500070
  • scopus:0037104321
ISSN
1098-0121
DOI
10.1103/PhysRevB.66.085312
language
English
LU publication?
yes
id
6bf1852c-40aa-4fe2-b3a8-f4f510f57e72 (old id 909707)
date added to LUP
2008-01-23 11:12:35
date last changed
2017-07-30 04:34:54
@article{6bf1852c-40aa-4fe2-b3a8-f4f510f57e72,
  abstract     = {We investigate the hybridization of the electron, heavy-hole and/or light-hole dispersion relations in strained InAs/GaSb quantum wells. In the considered structures, the lowest electron level lies below several hole levels at zero in-plane wave vector k(parallel to), so that the anticrossings of subbands produce gaps in the in-plane dispersions. To calculate the electronic band structures of such quantum wells grown on different substrates, we use the eight-band k.p model and the scattering matrix method. We have found that the order of levels at the zone center (k(parallel to)=0), gap positions and magnitudes can change due to the lattice-mismatched strain. Strain can also enhance the hybridization of electron and light-hole states at k(parallel to)=0 considerably. In the structure with a thick InAs layer grown on GaSb, we have obtained a negative indirect gap in the in-plane dispersion resulting from the anticrossing of electronlike and highest heavy-hole-like subbands. If the substrate is InAs, the gap becomes direct and positive. This phenomenon can be treated as strain-induced semimetal-semiconductor phase transition.},
  author       = {Zakharova, A and Yen, ST and Chao, Koung-An},
  issn         = {1098-0121},
  language     = {eng},
  number       = {8},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells},
  url          = {http://dx.doi.org/10.1103/PhysRevB.66.085312},
  volume       = {66},
  year         = {2002},
}