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Band-edge diagrams for strained III-V semiconductor quantum wells, wires, and dots

Pryor, CE and Pistol, Mats-Erik LU (2005) In Physical Review B (Condensed Matter and Materials Physics) 72(20).
Abstract
We have calculated band-edge energies for most combinations of zinc blende AlN, GaN, InN, GaP, GaAs, InP, InAs, GaSb, and InSb in which one material is strained to the other. Calculations were done for three different geometries (quantum wells, wires, and dots) and mean effective masses were computed in order to estimate confinement energies. For quantum wells, we have also calculated band-edges for ternary alloys. Energy gaps, including confinement, may be easily and accurately estimated using band energies and a simple effective mass approximation, yielding excellent agreement with experimental results. By calculating all material combinations we have identified interesting material combinations, such as artificial donors, that have not... (More)
We have calculated band-edge energies for most combinations of zinc blende AlN, GaN, InN, GaP, GaAs, InP, InAs, GaSb, and InSb in which one material is strained to the other. Calculations were done for three different geometries (quantum wells, wires, and dots) and mean effective masses were computed in order to estimate confinement energies. For quantum wells, we have also calculated band-edges for ternary alloys. Energy gaps, including confinement, may be easily and accurately estimated using band energies and a simple effective mass approximation, yielding excellent agreement with experimental results. By calculating all material combinations we have identified interesting material combinations, such as artificial donors, that have not been experimentally realized. The calculations were perfomed using strain-dependent k center dot p theory and provide a comprehensive overview of band structures for strained heterostructures. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
72
issue
20
publisher
American Physical Society
external identifiers
  • wos:000233603900064
  • scopus:29744466652
ISSN
1098-0121
DOI
10.1103/PhysRevB.72.205311
language
English
LU publication?
yes
id
9bffebfe-0d61-4274-9725-01cf996a4d36 (old id 910231)
date added to LUP
2008-01-22 15:22:34
date last changed
2017-10-22 04:49:37
@article{9bffebfe-0d61-4274-9725-01cf996a4d36,
  abstract     = {We have calculated band-edge energies for most combinations of zinc blende AlN, GaN, InN, GaP, GaAs, InP, InAs, GaSb, and InSb in which one material is strained to the other. Calculations were done for three different geometries (quantum wells, wires, and dots) and mean effective masses were computed in order to estimate confinement energies. For quantum wells, we have also calculated band-edges for ternary alloys. Energy gaps, including confinement, may be easily and accurately estimated using band energies and a simple effective mass approximation, yielding excellent agreement with experimental results. By calculating all material combinations we have identified interesting material combinations, such as artificial donors, that have not been experimentally realized. The calculations were perfomed using strain-dependent k center dot p theory and provide a comprehensive overview of band structures for strained heterostructures.},
  articleno    = {205311},
  author       = {Pryor, CE and Pistol, Mats-Erik},
  issn         = {1098-0121},
  language     = {eng},
  number       = {20},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Band-edge diagrams for strained III-V semiconductor quantum wells, wires, and dots},
  url          = {http://dx.doi.org/10.1103/PhysRevB.72.205311},
  volume       = {72},
  year         = {2005},
}