Trends in heteroepitaxy of III-Vs on silicon for photonic and photovoltaic applications
(2017) Smart Photonic and Optoelectronic Integrated Circuits XIX 2017 In Proceedings of SPIE - The International Society for Optical Engineering 10107.- Abstract
We present and compare the existing methods of heteroepitaxy of III-Vs on silicon and their trends. We focus on the epitaxial lateral overgrowth (ELOG) method as a means of achieving good quality III-Vs on silicon. Initially conducted primarily by near-equilibrium epitaxial methods such as liquid phase epitaxy and hydride vapour phase epitaxy, nowadays ELOG is being carried out even by non-equilibrium methods such as metal organic vapour phase epitaxy. In the ELOG method, the intermediate defective seed and the mask layers still exist between the laterally grown purer III-V layer and silicon. In a modified ELOG method called corrugated epitaxial lateral overgrowth (CELOG) method, it is possible to obtain direct interface between the... (More)
We present and compare the existing methods of heteroepitaxy of III-Vs on silicon and their trends. We focus on the epitaxial lateral overgrowth (ELOG) method as a means of achieving good quality III-Vs on silicon. Initially conducted primarily by near-equilibrium epitaxial methods such as liquid phase epitaxy and hydride vapour phase epitaxy, nowadays ELOG is being carried out even by non-equilibrium methods such as metal organic vapour phase epitaxy. In the ELOG method, the intermediate defective seed and the mask layers still exist between the laterally grown purer III-V layer and silicon. In a modified ELOG method called corrugated epitaxial lateral overgrowth (CELOG) method, it is possible to obtain direct interface between the III-V layer and silicon. In this presentation we exemplify some recent results obtained by these techniques. We assess the potentials of these methods along with the other existing methods for realizing truly monolithic photonic integration on silicon and III-V/Si heterojunction solar cells.
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- author
- Lourdudoss, Sebastian ; Junesand, Carl ; Kataria, Himanshu ; Metaferia, Wondwosen LU ; Omanakuttan, Giriprasanth ; Sun, Yan Ting ; Wang, Zhechao and Olsson, Fredrik
- organization
- publishing date
- 2017-02-20
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- CELOG, Corrugated epitaxial lateral overgrowth, ELOG, Epitaxial lateral overgrowth, Heterogeneous integration, III-V on Si, Monolithic integration of III-Vs on Si, Mulitjunction solar cells on silicon, Photonic integration, Silicon photonics
- host publication
- Smart Photonic and Optoelectronic Integrated Circuits XIX 2017
- series title
- Proceedings of SPIE - The International Society for Optical Engineering
- editor
- He, Sailing ; Eldada, Louay A. and Lee, El-Hang
- volume
- 10107
- article number
- 1010705
- publisher
- SPIE
- conference name
- Smart Photonic and Optoelectronic Integrated Circuits XIX 2017
- conference location
- San Francisco, United States
- conference dates
- 2017-01-31 - 2017-02-02
- external identifiers
-
- scopus:85019589393
- ISSN
- 0277-786X
- 1996-756X
- ISBN
- 9781510606555
- DOI
- 10.1117/12.2255607
- language
- English
- LU publication?
- yes
- id
- 919de42d-9da3-4885-878d-8f160ed3e53f
- date added to LUP
- 2022-04-04 12:26:53
- date last changed
- 2024-05-19 13:26:34
@inproceedings{919de42d-9da3-4885-878d-8f160ed3e53f,
abstract = {{<p>We present and compare the existing methods of heteroepitaxy of III-Vs on silicon and their trends. We focus on the epitaxial lateral overgrowth (ELOG) method as a means of achieving good quality III-Vs on silicon. Initially conducted primarily by near-equilibrium epitaxial methods such as liquid phase epitaxy and hydride vapour phase epitaxy, nowadays ELOG is being carried out even by non-equilibrium methods such as metal organic vapour phase epitaxy. In the ELOG method, the intermediate defective seed and the mask layers still exist between the laterally grown purer III-V layer and silicon. In a modified ELOG method called corrugated epitaxial lateral overgrowth (CELOG) method, it is possible to obtain direct interface between the III-V layer and silicon. In this presentation we exemplify some recent results obtained by these techniques. We assess the potentials of these methods along with the other existing methods for realizing truly monolithic photonic integration on silicon and III-V/Si heterojunction solar cells.</p>}},
author = {{Lourdudoss, Sebastian and Junesand, Carl and Kataria, Himanshu and Metaferia, Wondwosen and Omanakuttan, Giriprasanth and Sun, Yan Ting and Wang, Zhechao and Olsson, Fredrik}},
booktitle = {{Smart Photonic and Optoelectronic Integrated Circuits XIX 2017}},
editor = {{He, Sailing and Eldada, Louay A. and Lee, El-Hang}},
isbn = {{9781510606555}},
issn = {{0277-786X}},
keywords = {{CELOG; Corrugated epitaxial lateral overgrowth; ELOG; Epitaxial lateral overgrowth; Heterogeneous integration; III-V on Si; Monolithic integration of III-Vs on Si; Mulitjunction solar cells on silicon; Photonic integration; Silicon photonics}},
language = {{eng}},
month = {{02}},
publisher = {{SPIE}},
series = {{Proceedings of SPIE - The International Society for Optical Engineering}},
title = {{Trends in heteroepitaxy of III-Vs on silicon for photonic and photovoltaic applications}},
url = {{http://dx.doi.org/10.1117/12.2255607}},
doi = {{10.1117/12.2255607}},
volume = {{10107}},
year = {{2017}},
}