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Halide Engineering in Mixed Halide Perovskite-Inspired Cu2AgBiI6 for Solar Cells with Enhanced Performance

Sugathan, Vipinraj ; Liu, Maning LU orcid ; Pecoraro, Adriana ; Das, T. Kumar ; Ruoko, Tero Petri ; Grandhi, G Krishnamurthy ; Manna, Debjit ; Ali-Löytty, Harri ; Lahtonen, Kimmo and Muñoz-García, Ana Belén , et al. (2024) In ACS applied materials & interfaces 16(15). p.19026-19038
Abstract
Cu2AgBiI6 (CABI) is a promising
perovskite-inspired absorber for solar cells due to its direct band gap
and high absorption coefficient. However, the nonradiative recombination
caused by the high extrinsic trap density limits the performance of
CABI-based solar cells. In this work, we employ halide engineering by
doping bromide anions (Br–) in CABI thin films, in turn significantly improving the power conversion efficiency (PCE). By introducing Br–
in the synthetic route of CABI thin films, we identify the optimum
composition as CABI-10Br (with 10% Br at the halide site). The tailored
composition appears to reduce the deep trap density as shown by
... (More)
Cu2AgBiI6 (CABI) is a promising
perovskite-inspired absorber for solar cells due to its direct band gap
and high absorption coefficient. However, the nonradiative recombination
caused by the high extrinsic trap density limits the performance of
CABI-based solar cells. In this work, we employ halide engineering by
doping bromide anions (Br–) in CABI thin films, in turn significantly improving the power conversion efficiency (PCE). By introducing Br–
in the synthetic route of CABI thin films, we identify the optimum
composition as CABI-10Br (with 10% Br at the halide site). The tailored
composition appears to reduce the deep trap density as shown by
time-resolved photoluminescence and transient absorption spectroscopy
characterizations. This leads to a dramatic increase in the lifetime of
charge carriers, which therefore improves both the external quantum
efficiency and the integrated short-circuit current. The photovoltaic
performance shows a significant boost since the PCE under standard 1 sun
illumination increases from 1.32 to 1.69% (∼30% relative enhancement).
Systematic theoretical and experimental characterizations were employed
to investigate the effect of Br– incorporation on the
optoelectronic properties of CABI. Our results highlight the importance
of mitigating trap states in lead-free perovskite-inspired materials and
that Br– incorporation at the halide site is an effective strategy for improving the device performance. (Less)
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publishing date
type
Contribution to journal
publication status
published
subject
in
ACS applied materials & interfaces
volume
16
issue
15
pages
19026 - 19038
publisher
The American Chemical Society (ACS)
external identifiers
  • pmid:38569595
  • scopus:85189542333
ISSN
1944-8244
DOI
10.1021/acsami.4c02406
language
English
LU publication?
no
id
91bc1056-d09f-4579-9ffc-f63d6ea86e32
date added to LUP
2024-04-17 19:37:00
date last changed
2024-04-18 14:16:34
@article{91bc1056-d09f-4579-9ffc-f63d6ea86e32,
  abstract     = {{Cu<sub>2</sub>AgBiI<sub>6</sub> (CABI) is a promising <br>
perovskite-inspired absorber for solar cells due to its direct band gap <br>
and high absorption coefficient. However, the nonradiative recombination<br>
 caused by the high extrinsic trap density limits the performance of <br>
CABI-based solar cells. In this work, we employ halide engineering by <br>
doping bromide anions (Br<sup>–</sup>) in CABI thin films, in turn significantly improving the power conversion efficiency (PCE). By introducing Br<sup>–</sup><br>
 in the synthetic route of CABI thin films, we identify the optimum <br>
composition as CABI-10Br (with 10% Br at the halide site). The tailored <br>
composition appears to reduce the deep trap density as shown by <br>
time-resolved photoluminescence and transient absorption spectroscopy <br>
characterizations. This leads to a dramatic increase in the lifetime of <br>
charge carriers, which therefore improves both the external quantum <br>
efficiency and the integrated short-circuit current. The photovoltaic <br>
performance shows a significant boost since the PCE under standard 1 sun<br>
 illumination increases from 1.32 to 1.69% (∼30% relative enhancement). <br>
Systematic theoretical and experimental characterizations were employed <br>
to investigate the effect of Br<sup>–</sup> incorporation on the <br>
optoelectronic properties of CABI. Our results highlight the importance <br>
of mitigating trap states in lead-free perovskite-inspired materials and<br>
 that Br<sup>–</sup> incorporation at the halide site is an effective strategy for improving the device performance.}},
  author       = {{Sugathan, Vipinraj and Liu, Maning and Pecoraro, Adriana and Das, T. Kumar and Ruoko, Tero Petri and Grandhi, G Krishnamurthy and Manna, Debjit and Ali-Löytty, Harri and Lahtonen, Kimmo and Muñoz-García, Ana Belén and Pavone, Michele and Vivo, Paola}},
  issn         = {{1944-8244}},
  language     = {{eng}},
  month        = {{04}},
  number       = {{15}},
  pages        = {{19026--19038}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{ACS applied materials & interfaces}},
  title        = {{Halide Engineering in Mixed Halide Perovskite-Inspired Cu<sub>2</sub>AgBiI<sub>6</sub> for Solar Cells with Enhanced Performance}},
  url          = {{http://dx.doi.org/10.1021/acsami.4c02406}},
  doi          = {{10.1021/acsami.4c02406}},
  volume       = {{16}},
  year         = {{2024}},
}