Gate-Defined Quantum Devices Realized in InGaAs/InP by Incorporating a High-kappa Layer as Gate Dielectric
(2011) 30th International Conference on the Physics of Semiconductors (ICPS-30) 1399. p.285-286- Abstract
- Single and double quantum dot devices are realized in InGaAs/InP heterostructures by top gating technology with incorporated High-kappa HfO2 gate dielectric layers. At 300 mK, Coulomb blockade effects are observed in as-fabricated devices, and the charge states can be measured by the integrated quantum point contacts. The developed technology should stimulate the research on quantum devices made from materials to which the gating technology is often difficult to apply due to low Schottky barrier height.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2493687
- author
- Sun, Jie LU ; Larsson, Marcus LU and Xu, Hongqi LU
- organization
- publishing date
- 2011
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Quantum dots, InGaAs/InP, Coulomb blockade, High-kappa
- host publication
- Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors
- volume
- 1399
- pages
- 285 - 286
- publisher
- American Institute of Physics (AIP)
- conference name
- 30th International Conference on the Physics of Semiconductors (ICPS-30)
- conference location
- Seoul, Korea, Republic of
- conference dates
- 2010-07-25 - 2010-07-30
- external identifiers
-
- wos:000301053000127
- scopus:84862831501
- ISSN
- 1551-7616
- 0094-243X
- DOI
- 10.1063/1.3666365
- language
- English
- LU publication?
- yes
- id
- 9245d6c0-04f8-45f0-9606-d3ff8d697922 (old id 2493687)
- date added to LUP
- 2016-04-01 10:45:28
- date last changed
- 2024-01-07 00:34:17
@inproceedings{9245d6c0-04f8-45f0-9606-d3ff8d697922, abstract = {{Single and double quantum dot devices are realized in InGaAs/InP heterostructures by top gating technology with incorporated High-kappa HfO2 gate dielectric layers. At 300 mK, Coulomb blockade effects are observed in as-fabricated devices, and the charge states can be measured by the integrated quantum point contacts. The developed technology should stimulate the research on quantum devices made from materials to which the gating technology is often difficult to apply due to low Schottky barrier height.}}, author = {{Sun, Jie and Larsson, Marcus and Xu, Hongqi}}, booktitle = {{Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors}}, issn = {{1551-7616}}, keywords = {{Quantum dots; InGaAs/InP; Coulomb blockade; High-kappa}}, language = {{eng}}, pages = {{285--286}}, publisher = {{American Institute of Physics (AIP)}}, title = {{Gate-Defined Quantum Devices Realized in InGaAs/InP by Incorporating a High-kappa Layer as Gate Dielectric}}, url = {{http://dx.doi.org/10.1063/1.3666365}}, doi = {{10.1063/1.3666365}}, volume = {{1399}}, year = {{2011}}, }