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Quantum dots-in-a-well infrared photodetectors for long wavelength infrared detection

Höglund, L; Holtz, P.O; Ouattara, Lassana LU ; Asplund, C.; Wang, Q; Almqvist, S; Petrini, E; Malm, H; Borglind, J and Smuk, S, et al. (2006) In SPIE proceedings, Security and Defence 6401. p.1-640109
Abstract
We report on a quantum dots-in-a-well infrared photodetector (DWELL QDIP) grown by metal organic vapor phase epitaxy. The DWELL QDIP consisted of ten stacked InAs/In0.15Ga0.85As/GaAs QD layers embedded between n-doped contact layers. The density of the QDs was about 9 x 1010 cm-2 per QD layer. The energy level structure of the DWELL was revealed by optical measurements of interband transitions, and from a comparison with this energy level scheme the origin of the photocurrent peaks could be identified. The main intersubband transition contributing to the photocurrent was associated with the quantum dot ground state to the quantum well excited state transition. The performance of the DWELL QDIPs was evaluated regarding responsivity and dark... (More)
We report on a quantum dots-in-a-well infrared photodetector (DWELL QDIP) grown by metal organic vapor phase epitaxy. The DWELL QDIP consisted of ten stacked InAs/In0.15Ga0.85As/GaAs QD layers embedded between n-doped contact layers. The density of the QDs was about 9 x 1010 cm-2 per QD layer. The energy level structure of the DWELL was revealed by optical measurements of interband transitions, and from a comparison with this energy level scheme the origin of the photocurrent peaks could be identified. The main intersubband transition contributing to the photocurrent was associated with the quantum dot ground state to the quantum well excited state transition. The performance of the DWELL QDIPs was evaluated regarding responsivity and dark current for temperatures between 15 K and 77 K. The photocurrent spectrum was dominated by a LWIR peak, with a peak wavelength at 8.4 µm and a full width at half maximum (FWHM) of 1.1 µm. At an operating temperature of 65 K, the peak responsivity was 30 mA/W at an applied bias of 4 V and the dark current was 1.2×10-5 A/cm2. Wavelength tuning from 8.4 µm to 9.5 µm was demonstrated, by reversing the bias of the detector. (Less)
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SPIE proceedings, Security and Defence
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6401
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1 - 640109
external identifiers
  • Scopus:33846198353
DOI
10.1117/12.690010
language
English
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1b5b3c10-e723-4cbc-b391-0c9fc706b9c6 (old id 943412)
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2008-01-25 09:33:04
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@article{1b5b3c10-e723-4cbc-b391-0c9fc706b9c6,
  abstract     = {We report on a quantum dots-in-a-well infrared photodetector (DWELL QDIP) grown by metal organic vapor phase epitaxy. The DWELL QDIP consisted of ten stacked InAs/In0.15Ga0.85As/GaAs QD layers embedded between n-doped contact layers. The density of the QDs was about 9 x 1010 cm-2 per QD layer. The energy level structure of the DWELL was revealed by optical measurements of interband transitions, and from a comparison with this energy level scheme the origin of the photocurrent peaks could be identified. The main intersubband transition contributing to the photocurrent was associated with the quantum dot ground state to the quantum well excited state transition. The performance of the DWELL QDIPs was evaluated regarding responsivity and dark current for temperatures between 15 K and 77 K. The photocurrent spectrum was dominated by a LWIR peak, with a peak wavelength at 8.4 µm and a full width at half maximum (FWHM) of 1.1 µm. At an operating temperature of 65 K, the peak responsivity was 30 mA/W at an applied bias of 4 V and the dark current was 1.2×10-5 A/cm2. Wavelength tuning from 8.4 µm to 9.5 µm was demonstrated, by reversing the bias of the detector.},
  author       = {Höglund, L and Holtz, P.O and Ouattara, Lassana and Asplund, C. and Wang, Q and Almqvist, S and Petrini, E and Malm, H and Borglind, J and Smuk, S and Mikkelsen, Anders and Lundgren, Edvin and Pettersson, H and Andersson, J.Y},
  language     = {eng},
  pages        = {1--640109},
  series       = {SPIE proceedings, Security and Defence},
  title        = {Quantum dots-in-a-well infrared photodetectors for long wavelength infrared detection},
  url          = {http://dx.doi.org/10.1117/12.690010},
  volume       = {6401},
  year         = {2006},
}