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Enhanced Anisotropic Effective g Factors of an Al10.25Ga0.75N/GaN Heterostructure Based Quantum Point Contact

Lu, Fangchao; Tang, Ning; Huang, Shaoyun; Larsson, Marcus LU ; Maximov, Ivan LU ; Graczyk, Mariusz LU ; Duan, Junxi; Liu, Sidong; Ge, Weikun and Xu, Fujun, et al. (2013) In Nano Letters 13(10). p.4654-4658
Abstract
Gate-defined quantum point contacts (QPCs) were fabricated with Al0.25Ga0.75N/GaN heterostructures grown by metal organic chemical Vapor deposition (MOCVD). In the transport study of the Zeeman effect, greatly enhanced effective g factors (g*).were obtained. The in-plane g* is found to be 5.5 +/- 0.6, 4.8 0.4, and 4.2 0.4 for the first to the third subband, respectively. Similarly, the out-of-plane g* is 8.3 0.6, 6.7 0.7, and 5.1 0.7. Increasing g* with the population of odd-numbered spin-splitted subbands are obtabed at 14 T. This portion of increase is assumed to arise from the exchange interaction in one-dimensional systems. A careful analysis shows that not only the exchange interaction but the spin orbit interaction (SOI) in the... (More)
Gate-defined quantum point contacts (QPCs) were fabricated with Al0.25Ga0.75N/GaN heterostructures grown by metal organic chemical Vapor deposition (MOCVD). In the transport study of the Zeeman effect, greatly enhanced effective g factors (g*).were obtained. The in-plane g* is found to be 5.5 +/- 0.6, 4.8 0.4, and 4.2 0.4 for the first to the third subband, respectively. Similarly, the out-of-plane g* is 8.3 0.6, 6.7 0.7, and 5.1 0.7. Increasing g* with the population of odd-numbered spin-splitted subbands are obtabed at 14 T. This portion of increase is assumed to arise from the exchange interaction in one-dimensional systems. A careful analysis shows that not only the exchange interaction but the spin orbit interaction (SOI) in the strongly confined QPC contribunts to the enhancement and anisotropy of g* in different subbands. An approach to distinguish the respective contributions from the SOI and exchange interaction is therefore proposed. (Less)
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keywords
Quantum point contacts (QPCs), Al0.25Ga0.75N/GaN heterostructures, effective g factor, spin orbit interaction (SO!), exchange interaction
in
Nano Letters
volume
13
issue
10
pages
4654 - 4658
publisher
The American Chemical Society
external identifiers
  • wos:000326356300011
  • scopus:84885466510
ISSN
1530-6992
DOI
10.1021/nl401724m
language
English
LU publication?
yes
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94c148e2-ff63-4ed1-a8ca-cada92a87069 (old id 4212303)
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2014-01-07 11:28:31
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2019-01-06 08:54:36
@article{94c148e2-ff63-4ed1-a8ca-cada92a87069,
  abstract     = {Gate-defined quantum point contacts (QPCs) were fabricated with Al0.25Ga0.75N/GaN heterostructures grown by metal organic chemical Vapor deposition (MOCVD). In the transport study of the Zeeman effect, greatly enhanced effective g factors (g*).were obtained. The in-plane g* is found to be 5.5 +/- 0.6, 4.8 0.4, and 4.2 0.4 for the first to the third subband, respectively. Similarly, the out-of-plane g* is 8.3 0.6, 6.7 0.7, and 5.1 0.7. Increasing g* with the population of odd-numbered spin-splitted subbands are obtabed at 14 T. This portion of increase is assumed to arise from the exchange interaction in one-dimensional systems. A careful analysis shows that not only the exchange interaction but the spin orbit interaction (SOI) in the strongly confined QPC contribunts to the enhancement and anisotropy of g* in different subbands. An approach to distinguish the respective contributions from the SOI and exchange interaction is therefore proposed.},
  author       = {Lu, Fangchao and Tang, Ning and Huang, Shaoyun and Larsson, Marcus and Maximov, Ivan and Graczyk, Mariusz and Duan, Junxi and Liu, Sidong and Ge, Weikun and Xu, Fujun and Shen, Bo},
  issn         = {1530-6992},
  keyword      = {Quantum point contacts (QPCs),Al0.25Ga0.75N/GaN heterostructures,effective g factor,spin orbit interaction (SO!),exchange interaction},
  language     = {eng},
  number       = {10},
  pages        = {4654--4658},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Enhanced Anisotropic Effective g Factors of an Al10.25Ga0.75N/GaN Heterostructure Based Quantum Point Contact},
  url          = {http://dx.doi.org/10.1021/nl401724m},
  volume       = {13},
  year         = {2013},
}