High aspect ratio silicon structures by displacement Talbot lithography and Bosch etching
(2017) Advances in Patterning Materials and Processes XXXIV 2017 In Proceedings of SPIE - The International Society for Optical Engineering 10146.- Abstract
Despite the fact that the resolution of conventional contact/proximity lithography can reach feature sizes down to ∼0.5-0.6 micrometers, the accurate control of the linewidth and uniformity becomes already very challenging for gratings with periods in the range of 1-2 μm. This is particularly relevant for the exposure of large areas and wafers thinner than 300 μm. If the wafer or mask surface is not fully flat due to any kind of defects, such as bowing/warpage or remaining topography of the surface in case of overlay exposures, noticeable linewidth variations or complete failure of lithography step will occur. We utilized the newly developed Displacement Talbot lithography to pattern gratings with equal lines and spaces and periods in... (More)
Despite the fact that the resolution of conventional contact/proximity lithography can reach feature sizes down to ∼0.5-0.6 micrometers, the accurate control of the linewidth and uniformity becomes already very challenging for gratings with periods in the range of 1-2 μm. This is particularly relevant for the exposure of large areas and wafers thinner than 300 μm. If the wafer or mask surface is not fully flat due to any kind of defects, such as bowing/warpage or remaining topography of the surface in case of overlay exposures, noticeable linewidth variations or complete failure of lithography step will occur. We utilized the newly developed Displacement Talbot lithography to pattern gratings with equal lines and spaces and periods in the range of 1.0 to 2.4 μm. The exposures in this lithography process do not require contact between the mask and the wafer, which makes it essentially insensitive to surface planarity and enables exposures with very high linewidth uniformity on thin and even slightly deformed wafers. We demonstrated pattern transfer of such exposures into Si substrates by reactive ion etching using the Bosch process. An etching depth of 30 μm or more for the whole range of periods was achieved, which corresponds to very high aspect ratios up to 60:1. The application of the fabricated gratings in phase contrast x-ray imaging is presented.
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- author
- Jefimovs, Konstantins ; Romano, Lucia ; Vila-Comamala, Joan ; Kagias, Matias LU ; Wang, Zhentian ; Wang, Li ; Dais, Christian ; Solak, Harun and Stampanoni, Marco
- publishing date
- 2017
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Bosch process, Displacement Talbot lithography, High aspect ratio, Silicon etching, X-ray interferometry
- host publication
- Advances in Patterning Materials and Processes XXXIV
- series title
- Proceedings of SPIE - The International Society for Optical Engineering
- editor
- Hohle, Christoph K.
- volume
- 10146
- article number
- 101460L
- publisher
- SPIE
- conference name
- Advances in Patterning Materials and Processes XXXIV 2017
- conference location
- San Jose, United States
- conference dates
- 2017-02-27 - 2017-03-02
- external identifiers
-
- scopus:85020662033
- ISSN
- 1996-756X
- 0277-786X
- ISBN
- 9781510607439
- DOI
- 10.1117/12.2258007
- language
- English
- LU publication?
- no
- additional info
- Publisher Copyright: © 2017 SPIE.
- id
- 960eca8b-3441-4ea0-b3ab-773b90bf0641
- date added to LUP
- 2023-11-27 09:04:39
- date last changed
- 2024-04-24 12:42:31
@inproceedings{960eca8b-3441-4ea0-b3ab-773b90bf0641,
abstract = {{<p>Despite the fact that the resolution of conventional contact/proximity lithography can reach feature sizes down to ∼0.5-0.6 micrometers, the accurate control of the linewidth and uniformity becomes already very challenging for gratings with periods in the range of 1-2 μm. This is particularly relevant for the exposure of large areas and wafers thinner than 300 μm. If the wafer or mask surface is not fully flat due to any kind of defects, such as bowing/warpage or remaining topography of the surface in case of overlay exposures, noticeable linewidth variations or complete failure of lithography step will occur. We utilized the newly developed Displacement Talbot lithography to pattern gratings with equal lines and spaces and periods in the range of 1.0 to 2.4 μm. The exposures in this lithography process do not require contact between the mask and the wafer, which makes it essentially insensitive to surface planarity and enables exposures with very high linewidth uniformity on thin and even slightly deformed wafers. We demonstrated pattern transfer of such exposures into Si substrates by reactive ion etching using the Bosch process. An etching depth of 30 μm or more for the whole range of periods was achieved, which corresponds to very high aspect ratios up to 60:1. The application of the fabricated gratings in phase contrast x-ray imaging is presented.</p>}},
author = {{Jefimovs, Konstantins and Romano, Lucia and Vila-Comamala, Joan and Kagias, Matias and Wang, Zhentian and Wang, Li and Dais, Christian and Solak, Harun and Stampanoni, Marco}},
booktitle = {{Advances in Patterning Materials and Processes XXXIV}},
editor = {{Hohle, Christoph K.}},
isbn = {{9781510607439}},
issn = {{1996-756X}},
keywords = {{Bosch process; Displacement Talbot lithography; High aspect ratio; Silicon etching; X-ray interferometry}},
language = {{eng}},
publisher = {{SPIE}},
series = {{Proceedings of SPIE - The International Society for Optical Engineering}},
title = {{High aspect ratio silicon structures by displacement Talbot lithography and Bosch etching}},
url = {{http://dx.doi.org/10.1117/12.2258007}},
doi = {{10.1117/12.2258007}},
volume = {{10146}},
year = {{2017}},
}