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Direct Observation of 2DEG States in Shallow Si:Sb δ-Layers

Strand, Frode S. ; Cooil, Simon P. ; Campbell, Quinn T. ; Flounders, John J. ; Røst, Håkon I. ; Åsland, Anna Cecilie ; Skarpeid, Alv Johan ; Stalsberg, Marte P. ; Hu, Jinbang and Bakkelund, Johannes , et al. (2025) In Journal of Physical Chemistry C 129(2). p.1339-1347
Abstract

We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb δ-layers. We show that, in spite of the known challenges in producing highly confined Sb δ-layers, sufficient confinement is created such that the lowest conduction band states (Γ states, studied in depth in other silicon δ-layers), become occupied and can be observed using angle-resolved photoemission spectroscopy. The electronic structure of the Si:Sb δ-layers closely resembles that of Si:P systems, where the observed conduction band is near-parabolic and slightly anisotropic in the k∥ plane. The observed Γ state extends ∼1 nm in the out-of-plane direction, which is slightly wider than the 1/3 monolayer thick... (More)

We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb δ-layers. We show that, in spite of the known challenges in producing highly confined Sb δ-layers, sufficient confinement is created such that the lowest conduction band states (Γ states, studied in depth in other silicon δ-layers), become occupied and can be observed using angle-resolved photoemission spectroscopy. The electronic structure of the Si:Sb δ-layers closely resembles that of Si:P systems, where the observed conduction band is near-parabolic and slightly anisotropic in the k∥ plane. The observed Γ state extends ∼1 nm in the out-of-plane direction, which is slightly wider than the 1/3 monolayer thick dopant distribution. This is caused by a small segregation of the dopant layer, which is nevertheless minimal when comparing with earlier published attempts. Our results serve to demonstrate that Sb is still a feasible dopant alternative for use in the semiconductor δ-layer platform, providing similar electronic functionality to Si:P systems. Additionally, it has the advantages of being less expensive, more controllable, safer to handle, and more compatible with industrial patterning techniques. Si:Sb is therefore a viable platform for emerging quantum device applications.

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publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Physical Chemistry C
volume
129
issue
2
pages
9 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:86000376972
ISSN
1932-7447
DOI
10.1021/acs.jpcc.4c07331
language
English
LU publication?
yes
additional info
Publisher Copyright: © 2025 The Authors. Published by American Chemical Society.
id
96dfccd4-507d-4fe7-b92c-8cdd749e3f43
date added to LUP
2025-06-23 16:07:25
date last changed
2025-06-23 16:08:02
@article{96dfccd4-507d-4fe7-b92c-8cdd749e3f43,
  abstract     = {{<p>We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb δ-layers. We show that, in spite of the known challenges in producing highly confined Sb δ-layers, sufficient confinement is created such that the lowest conduction band states (Γ states, studied in depth in other silicon δ-layers), become occupied and can be observed using angle-resolved photoemission spectroscopy. The electronic structure of the Si:Sb δ-layers closely resembles that of Si:P systems, where the observed conduction band is near-parabolic and slightly anisotropic in the k<sub>∥</sub> plane. The observed Γ state extends ∼1 nm in the out-of-plane direction, which is slightly wider than the 1/3 monolayer thick dopant distribution. This is caused by a small segregation of the dopant layer, which is nevertheless minimal when comparing with earlier published attempts. Our results serve to demonstrate that Sb is still a feasible dopant alternative for use in the semiconductor δ-layer platform, providing similar electronic functionality to Si:P systems. Additionally, it has the advantages of being less expensive, more controllable, safer to handle, and more compatible with industrial patterning techniques. Si:Sb is therefore a viable platform for emerging quantum device applications.</p>}},
  author       = {{Strand, Frode S. and Cooil, Simon P. and Campbell, Quinn T. and Flounders, John J. and Røst, Håkon I. and Åsland, Anna Cecilie and Skarpeid, Alv Johan and Stalsberg, Marte P. and Hu, Jinbang and Bakkelund, Johannes and Bjelland, Victoria and Preobrajenski, Alexei B. and Li, Zheshen and Bianchi, Marco and Miwa, Jill A. and Wells, Justin W.}},
  issn         = {{1932-7447}},
  language     = {{eng}},
  month        = {{01}},
  number       = {{2}},
  pages        = {{1339--1347}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Journal of Physical Chemistry C}},
  title        = {{Direct Observation of 2DEG States in Shallow Si:Sb δ-Layers}},
  url          = {{http://dx.doi.org/10.1021/acs.jpcc.4c07331}},
  doi          = {{10.1021/acs.jpcc.4c07331}},
  volume       = {{129}},
  year         = {{2025}},
}