Adsorption-induced gap states of h-BN on metal surfaces
(2008) In Physical Review B 77(8). p.1-085421- Abstract
- The formation of hexagonal boron nitride (h-BN) monolayers on Ni(111), Rh(111), and Pt(111) has been studied by a combination of x-ray emission, angle-resolved valence band photoemission, and x-ray absorption in search for interface-induced gap states of h-BN. A significant density of both occupied and unoccupied gap states with N 2p and B 2p characters is observed for h-BN/Ni(111), somewhat less for h-BN/Rh(111) and still less for h-BN/Pt(111). X-ray emission shows that the h-BN monolayer is chemisorbed strongly on Ni(111) and very weakly on Pt(111). We associate the gap states of h-BN adsorbed on the transition metal surfaces with the orbital mixing and electron sharing at the interface because their density increases with the growing... (More)
- The formation of hexagonal boron nitride (h-BN) monolayers on Ni(111), Rh(111), and Pt(111) has been studied by a combination of x-ray emission, angle-resolved valence band photoemission, and x-ray absorption in search for interface-induced gap states of h-BN. A significant density of both occupied and unoccupied gap states with N 2p and B 2p characters is observed for h-BN/Ni(111), somewhat less for h-BN/Rh(111) and still less for h-BN/Pt(111). X-ray emission shows that the h-BN monolayer is chemisorbed strongly on Ni(111) and very weakly on Pt(111). We associate the gap states of h-BN adsorbed on the transition metal surfaces with the orbital mixing and electron sharing at the interface because their density increases with the growing strength of chemisorption. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/976165
- author
- Preobrajenski, Alexei LU ; Krasnikov, S. A. ; Vinogradov, A. S. ; Ng, May Ling LU ; Käämbre, Tanel LU ; Cafolla, A. A. and Mårtensson, Nils LU
- organization
- publishing date
- 2008
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B
- volume
- 77
- issue
- 8
- pages
- 1 - 085421
- publisher
- American Physical Society
- external identifiers
-
- wos:000253764300104
- scopus:40849094399
- ISSN
- 1550-235X
- DOI
- 10.1103/PhysRevB.77.085421
- language
- English
- LU publication?
- yes
- id
- def609e8-a4a8-4ba9-9ac4-eb8b19fa880f (old id 976165)
- date added to LUP
- 2016-04-01 13:36:38
- date last changed
- 2022-01-27 20:04:12
@article{def609e8-a4a8-4ba9-9ac4-eb8b19fa880f, abstract = {{The formation of hexagonal boron nitride (h-BN) monolayers on Ni(111), Rh(111), and Pt(111) has been studied by a combination of x-ray emission, angle-resolved valence band photoemission, and x-ray absorption in search for interface-induced gap states of h-BN. A significant density of both occupied and unoccupied gap states with N 2p and B 2p characters is observed for h-BN/Ni(111), somewhat less for h-BN/Rh(111) and still less for h-BN/Pt(111). X-ray emission shows that the h-BN monolayer is chemisorbed strongly on Ni(111) and very weakly on Pt(111). We associate the gap states of h-BN adsorbed on the transition metal surfaces with the orbital mixing and electron sharing at the interface because their density increases with the growing strength of chemisorption.}}, author = {{Preobrajenski, Alexei and Krasnikov, S. A. and Vinogradov, A. S. and Ng, May Ling and Käämbre, Tanel and Cafolla, A. A. and Mårtensson, Nils}}, issn = {{1550-235X}}, language = {{eng}}, number = {{8}}, pages = {{1--085421}}, publisher = {{American Physical Society}}, series = {{Physical Review B}}, title = {{Adsorption-induced gap states of h-BN on metal surfaces}}, url = {{http://dx.doi.org/10.1103/PhysRevB.77.085421}}, doi = {{10.1103/PhysRevB.77.085421}}, volume = {{77}}, year = {{2008}}, }