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Adsorption-induced gap states of h-BN on metal surfaces

Preobrajenski, Alexei LU ; Krasnikov, S. A.; Vinogradov, A. S.; Ng, May Ling LU ; Käämbre, Tanel LU ; Cafolla, A. A. and Mårtensson, Nils LU (2008) In Physical Review B 77(8). p.1-085421
Abstract
The formation of hexagonal boron nitride (h-BN) monolayers on Ni(111), Rh(111), and Pt(111) has been studied by a combination of x-ray emission, angle-resolved valence band photoemission, and x-ray absorption in search for interface-induced gap states of h-BN. A significant density of both occupied and unoccupied gap states with N 2p and B 2p characters is observed for h-BN/Ni(111), somewhat less for h-BN/Rh(111) and still less for h-BN/Pt(111). X-ray emission shows that the h-BN monolayer is chemisorbed strongly on Ni(111) and very weakly on Pt(111). We associate the gap states of h-BN adsorbed on the transition metal surfaces with the orbital mixing and electron sharing at the interface because their density increases with the growing... (More)
The formation of hexagonal boron nitride (h-BN) monolayers on Ni(111), Rh(111), and Pt(111) has been studied by a combination of x-ray emission, angle-resolved valence band photoemission, and x-ray absorption in search for interface-induced gap states of h-BN. A significant density of both occupied and unoccupied gap states with N 2p and B 2p characters is observed for h-BN/Ni(111), somewhat less for h-BN/Rh(111) and still less for h-BN/Pt(111). X-ray emission shows that the h-BN monolayer is chemisorbed strongly on Ni(111) and very weakly on Pt(111). We associate the gap states of h-BN adsorbed on the transition metal surfaces with the orbital mixing and electron sharing at the interface because their density increases with the growing strength of chemisorption. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B
volume
77
issue
8
pages
1 - 085421
publisher
American Physical Society
external identifiers
  • wos:000253764300104
  • scopus:40849094399
ISSN
1550-235X
DOI
10.1103/PhysRevB.77.085421
language
English
LU publication?
yes
id
def609e8-a4a8-4ba9-9ac4-eb8b19fa880f (old id 976165)
date added to LUP
2009-07-08 15:36:48
date last changed
2017-08-06 04:01:52
@article{def609e8-a4a8-4ba9-9ac4-eb8b19fa880f,
  abstract     = {The formation of hexagonal boron nitride (h-BN) monolayers on Ni(111), Rh(111), and Pt(111) has been studied by a combination of x-ray emission, angle-resolved valence band photoemission, and x-ray absorption in search for interface-induced gap states of h-BN. A significant density of both occupied and unoccupied gap states with N 2p and B 2p characters is observed for h-BN/Ni(111), somewhat less for h-BN/Rh(111) and still less for h-BN/Pt(111). X-ray emission shows that the h-BN monolayer is chemisorbed strongly on Ni(111) and very weakly on Pt(111). We associate the gap states of h-BN adsorbed on the transition metal surfaces with the orbital mixing and electron sharing at the interface because their density increases with the growing strength of chemisorption.},
  author       = {Preobrajenski, Alexei and Krasnikov, S. A. and Vinogradov, A. S. and Ng, May Ling and Käämbre, Tanel and Cafolla, A. A. and Mårtensson, Nils},
  issn         = {1550-235X},
  language     = {eng},
  number       = {8},
  pages        = {1--085421},
  publisher    = {American Physical Society},
  series       = {Physical Review B},
  title        = {Adsorption-induced gap states of h-BN on metal surfaces},
  url          = {http://dx.doi.org/10.1103/PhysRevB.77.085421},
  volume       = {77},
  year         = {2008},
}