High rate reactive dc magnetron sputter deposition of Al2O3 films
(1998) In Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films 16(2). p.639-639- Abstract
- Aluminum oxide films were produced by reactive dc magnetron sputtering of Al in Ar+O2. The composition of the films was characterized by Rutherford backscattering measurements. Stoichiometric films possessed excellent optical properties with a refractive index of ∼1.6 for visible and near-infrared light. It was possible to produce stoichiometric films while keeping the target in the metallic mode of operation; the resulting deposition rate was 23 nm min−1, as compared to 0.95 nm min−1 for filmsgrown from an oxidized target. An O/Al arrival rate ratio exceeding ∼17 was required for stoichiometric films to be grown at room temperature. The success of the present high-rate deposition strategy hinges on the use of a suitable deposition system... (More)
- Aluminum oxide films were produced by reactive dc magnetron sputtering of Al in Ar+O2. The composition of the films was characterized by Rutherford backscattering measurements. Stoichiometric films possessed excellent optical properties with a refractive index of ∼1.6 for visible and near-infrared light. It was possible to produce stoichiometric films while keeping the target in the metallic mode of operation; the resulting deposition rate was 23 nm min−1, as compared to 0.95 nm min−1 for filmsgrown from an oxidized target. An O/Al arrival rate ratio exceeding ∼17 was required for stoichiometric films to be grown at room temperature. The success of the present high-rate deposition strategy hinges on the use of a suitable deposition system geometry — including a large target-to-substrate distance and a small target size — and on the use of sufficient Ar pressure. Monte Carlo simulations are presented; they can be reconciled with our empirical data. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4643613
- author
- Olsson, Maryam LU ; Macak, Karol ; Helmersson, Ulf and Hjörvarsson, Björn
- publishing date
- 1998
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films
- volume
- 16
- issue
- 2
- pages
- 639 - 639
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:0032379780
- ISSN
- 1520-8559
- DOI
- 10.1116/1.581081
- language
- English
- LU publication?
- no
- id
- 98c7d76d-6229-453c-8d78-379745ae5024 (old id 4643613)
- date added to LUP
- 2016-04-01 12:23:25
- date last changed
- 2022-01-27 03:05:22
@article{98c7d76d-6229-453c-8d78-379745ae5024, abstract = {{Aluminum oxide films were produced by reactive dc magnetron sputtering of Al in Ar+O2. The composition of the films was characterized by Rutherford backscattering measurements. Stoichiometric films possessed excellent optical properties with a refractive index of ∼1.6 for visible and near-infrared light. It was possible to produce stoichiometric films while keeping the target in the metallic mode of operation; the resulting deposition rate was 23 nm min−1, as compared to 0.95 nm min−1 for filmsgrown from an oxidized target. An O/Al arrival rate ratio exceeding ∼17 was required for stoichiometric films to be grown at room temperature. The success of the present high-rate deposition strategy hinges on the use of a suitable deposition system geometry — including a large target-to-substrate distance and a small target size — and on the use of sufficient Ar pressure. Monte Carlo simulations are presented; they can be reconciled with our empirical data.}}, author = {{Olsson, Maryam and Macak, Karol and Helmersson, Ulf and Hjörvarsson, Björn}}, issn = {{1520-8559}}, language = {{eng}}, number = {{2}}, pages = {{639--639}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films}}, title = {{High rate reactive dc magnetron sputter deposition of Al2O3 films}}, url = {{http://dx.doi.org/10.1116/1.581081}}, doi = {{10.1116/1.581081}}, volume = {{16}}, year = {{1998}}, }