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One-step synthesis of graphene containing topological defects

Klein, Benedikt P. ; Stoodley, Matthew A. ; Deyerling, Joel ; Rochford, Luke A. ; Morgan, Dylan B. ; Hopkinson, David ; Sullivan-Allsop, Sam ; Thake, Henry ; Eratam, Fulden and Sattler, Lars , et al. (2025) In Chemical Science
Abstract

Chemical vapour deposition enables large-domain growth of ideal graphene, yet many applications of graphene require the controlled inclusion of specific defects. We present a one-step chemical vapour deposition procedure aimed at retaining the precursor topology when incorporated into the grown carbonaceous film. When azupyrene, the molecular analogue of the Stone-Wales defect in graphene, is used as a precursor, carbonaceous monolayers with a range of morphologies are produced as a function of the copper substrate growth temperature. The higher the substrate temperature during deposition, the closer the resulting monolayer is to ideal graphene. Analysis, with a set of complementary materials characterisation techniques, reveals... (More)

Chemical vapour deposition enables large-domain growth of ideal graphene, yet many applications of graphene require the controlled inclusion of specific defects. We present a one-step chemical vapour deposition procedure aimed at retaining the precursor topology when incorporated into the grown carbonaceous film. When azupyrene, the molecular analogue of the Stone-Wales defect in graphene, is used as a precursor, carbonaceous monolayers with a range of morphologies are produced as a function of the copper substrate growth temperature. The higher the substrate temperature during deposition, the closer the resulting monolayer is to ideal graphene. Analysis, with a set of complementary materials characterisation techniques, reveals morphological changes closely correlated with changes in the atomic adsorption heights, network topology, and concentration of 5-/7-membered carbon rings. The engineered defective carbon monolayers can be transferred to different substrates, potentially enabling applications in nanoelectronics, sensorics, and catalysis.

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organization
publishing date
type
Contribution to journal
publication status
epub
subject
in
Chemical Science
publisher
Royal Society of Chemistry
external identifiers
  • pmid:41000129
  • scopus:105018709280
ISSN
2041-6520
DOI
10.1039/d5sc03699b
language
English
LU publication?
yes
additional info
Publisher Copyright: © 2025 The Royal Society of Chemistry.
id
990549a5-bbdd-4921-a271-c16c930062a3
date added to LUP
2026-01-22 15:10:30
date last changed
2026-01-23 03:00:04
@article{990549a5-bbdd-4921-a271-c16c930062a3,
  abstract     = {{<p>Chemical vapour deposition enables large-domain growth of ideal graphene, yet many applications of graphene require the controlled inclusion of specific defects. We present a one-step chemical vapour deposition procedure aimed at retaining the precursor topology when incorporated into the grown carbonaceous film. When azupyrene, the molecular analogue of the Stone-Wales defect in graphene, is used as a precursor, carbonaceous monolayers with a range of morphologies are produced as a function of the copper substrate growth temperature. The higher the substrate temperature during deposition, the closer the resulting monolayer is to ideal graphene. Analysis, with a set of complementary materials characterisation techniques, reveals morphological changes closely correlated with changes in the atomic adsorption heights, network topology, and concentration of 5-/7-membered carbon rings. The engineered defective carbon monolayers can be transferred to different substrates, potentially enabling applications in nanoelectronics, sensorics, and catalysis.</p>}},
  author       = {{Klein, Benedikt P. and Stoodley, Matthew A. and Deyerling, Joel and Rochford, Luke A. and Morgan, Dylan B. and Hopkinson, David and Sullivan-Allsop, Sam and Thake, Henry and Eratam, Fulden and Sattler, Lars and Weber, Sebastian M. and Hilt, Gerhard and Generalov, Alexander and Preobrajenski, Alexei and Liddy, Thomas and Williams, Leon B.S. and Buchan, Mhairi A. and Rance, Graham A. and Lee, Tien Lin and Saywell, Alex and Gorbachev, Roman and Haigh, Sarah J. and Allen, Christopher S. and Auwärter, Willi and Maurer, Reinhard J. and Duncan, David A.}},
  issn         = {{2041-6520}},
  language     = {{eng}},
  publisher    = {{Royal Society of Chemistry}},
  series       = {{Chemical Science}},
  title        = {{One-step synthesis of graphene containing topological defects}},
  url          = {{http://dx.doi.org/10.1039/d5sc03699b}},
  doi          = {{10.1039/d5sc03699b}},
  year         = {{2025}},
}