Gate defined quantum dot realized in a single crystalline InSb nanosheet
(2019) In Applied Physics Letters 114(2).- Abstract
A single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics, and topological quantum computing. Here, we report on the realization of a quantum dot device from a single crystalline InSb nanosheet grown by molecular-beam epitaxy. The device is fabricated from the nanosheet on a Si/SiO2 substrate, and quantum dot confinement is achieved by the top gate technique. Transport measurements of the device are carried out at a low temperature in a dilution refrigerator. It is found that the measured charge stability diagram is characterized by a series of small Coulomb diamonds at high plunger gate voltages and a series of large... (More)
A single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics, and topological quantum computing. Here, we report on the realization of a quantum dot device from a single crystalline InSb nanosheet grown by molecular-beam epitaxy. The device is fabricated from the nanosheet on a Si/SiO2 substrate, and quantum dot confinement is achieved by the top gate technique. Transport measurements of the device are carried out at a low temperature in a dilution refrigerator. It is found that the measured charge stability diagram is characterized by a series of small Coulomb diamonds at high plunger gate voltages and a series of large Coulomb diamonds at low plunger gate voltages, demonstrating the formation of a gate-tunable quantum dot in the InSb nanosheet. Gate-defined planar InSb quantum dots offer a renewed platform for developing semiconductor-based quantum computation technology.
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- author
- Xue, Jianhong ; Chen, Yuanjie ; Pan, Dong ; Wang, Ji Yin ; Zhao, Jianhua ; Huang, Shaoyun and Xu, H. Q. LU
- organization
- publishing date
- 2019
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 114
- issue
- 2
- article number
- 023108
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:85060160184
- ISSN
- 0003-6951
- DOI
- 10.1063/1.5064368
- language
- English
- LU publication?
- yes
- id
- 9a8c98e2-e200-4d34-a16a-402b8f40195f
- date added to LUP
- 2019-01-29 13:13:09
- date last changed
- 2023-11-18 11:47:58
@article{9a8c98e2-e200-4d34-a16a-402b8f40195f,
abstract = {{<p>A single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics, and topological quantum computing. Here, we report on the realization of a quantum dot device from a single crystalline InSb nanosheet grown by molecular-beam epitaxy. The device is fabricated from the nanosheet on a Si/SiO<sub>2</sub> substrate, and quantum dot confinement is achieved by the top gate technique. Transport measurements of the device are carried out at a low temperature in a dilution refrigerator. It is found that the measured charge stability diagram is characterized by a series of small Coulomb diamonds at high plunger gate voltages and a series of large Coulomb diamonds at low plunger gate voltages, demonstrating the formation of a gate-tunable quantum dot in the InSb nanosheet. Gate-defined planar InSb quantum dots offer a renewed platform for developing semiconductor-based quantum computation technology.</p>}},
author = {{Xue, Jianhong and Chen, Yuanjie and Pan, Dong and Wang, Ji Yin and Zhao, Jianhua and Huang, Shaoyun and Xu, H. Q.}},
issn = {{0003-6951}},
language = {{eng}},
number = {{2}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{Gate defined quantum dot realized in a single crystalline InSb nanosheet}},
url = {{http://dx.doi.org/10.1063/1.5064368}},
doi = {{10.1063/1.5064368}},
volume = {{114}},
year = {{2019}},
}