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Gate defined quantum dot realized in a single crystalline InSb nanosheet

Xue, Jianhong ; Chen, Yuanjie ; Pan, Dong ; Wang, Ji Yin ; Zhao, Jianhua ; Huang, Shaoyun and Xu, H. Q. LU (2019) In Applied Physics Letters 114(2).
Abstract

A single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics, and topological quantum computing. Here, we report on the realization of a quantum dot device from a single crystalline InSb nanosheet grown by molecular-beam epitaxy. The device is fabricated from the nanosheet on a Si/SiO2 substrate, and quantum dot confinement is achieved by the top gate technique. Transport measurements of the device are carried out at a low temperature in a dilution refrigerator. It is found that the measured charge stability diagram is characterized by a series of small Coulomb diamonds at high plunger gate voltages and a series of large... (More)

A single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics, and topological quantum computing. Here, we report on the realization of a quantum dot device from a single crystalline InSb nanosheet grown by molecular-beam epitaxy. The device is fabricated from the nanosheet on a Si/SiO2 substrate, and quantum dot confinement is achieved by the top gate technique. Transport measurements of the device are carried out at a low temperature in a dilution refrigerator. It is found that the measured charge stability diagram is characterized by a series of small Coulomb diamonds at high plunger gate voltages and a series of large Coulomb diamonds at low plunger gate voltages, demonstrating the formation of a gate-tunable quantum dot in the InSb nanosheet. Gate-defined planar InSb quantum dots offer a renewed platform for developing semiconductor-based quantum computation technology.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
114
issue
2
article number
023108
publisher
AIP Publishing LLC
external identifiers
  • scopus:85060160184
ISSN
0003-6951
DOI
10.1063/1.5064368
language
English
LU publication?
yes
id
9a8c98e2-e200-4d34-a16a-402b8f40195f
date added to LUP
2019-01-29 13:13:09
date last changed
2020-01-22 07:25:53
@article{9a8c98e2-e200-4d34-a16a-402b8f40195f,
  abstract     = {<p>A single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics, and topological quantum computing. Here, we report on the realization of a quantum dot device from a single crystalline InSb nanosheet grown by molecular-beam epitaxy. The device is fabricated from the nanosheet on a Si/SiO<sub>2</sub> substrate, and quantum dot confinement is achieved by the top gate technique. Transport measurements of the device are carried out at a low temperature in a dilution refrigerator. It is found that the measured charge stability diagram is characterized by a series of small Coulomb diamonds at high plunger gate voltages and a series of large Coulomb diamonds at low plunger gate voltages, demonstrating the formation of a gate-tunable quantum dot in the InSb nanosheet. Gate-defined planar InSb quantum dots offer a renewed platform for developing semiconductor-based quantum computation technology.</p>},
  author       = {Xue, Jianhong and Chen, Yuanjie and Pan, Dong and Wang, Ji Yin and Zhao, Jianhua and Huang, Shaoyun and Xu, H. Q.},
  issn         = {0003-6951},
  language     = {eng},
  number       = {2},
  publisher    = {AIP Publishing LLC},
  series       = {Applied Physics Letters},
  title        = {Gate defined quantum dot realized in a single crystalline InSb nanosheet},
  url          = {http://dx.doi.org/10.1063/1.5064368},
  doi          = {10.1063/1.5064368},
  volume       = {114},
  year         = {2019},
}