Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime
(2016) In Applied Physics Letters 109(5).- Abstract
We demonstrate direct measurements of the spin-orbit interaction and Landé g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a Si/SiO2 substrate and the measurements are performed in the Pauli spin-blockade regime. It is found that the double quantum dot exhibits a large singlet-triplet energy splitting of ΔST ∼ 2.3 meV, a strong spin-orbit interaction of ΔSO ∼ 140 μeV, and a large and strongly level-dependent Landé g factor of ∼12.5. These results imply that single-crystal pure-phase InAs nanowires are desired semiconductor nanostructures for applications in quantum information... (More)
We demonstrate direct measurements of the spin-orbit interaction and Landé g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a Si/SiO2 substrate and the measurements are performed in the Pauli spin-blockade regime. It is found that the double quantum dot exhibits a large singlet-triplet energy splitting of ΔST ∼ 2.3 meV, a strong spin-orbit interaction of ΔSO ∼ 140 μeV, and a large and strongly level-dependent Landé g factor of ∼12.5. These results imply that single-crystal pure-phase InAs nanowires are desired semiconductor nanostructures for applications in quantum information technologies.
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- author
- Wang, Jiyin ; Huang, Shaoyun ; Lei, Zijin ; Pan, Dong ; Zhao, Jianhua and Xu, H. Q. LU
- organization
- publishing date
- 2016-08-01
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 109
- issue
- 5
- article number
- 053106
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000383091400037
- scopus:84982806755
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4960464
- language
- English
- LU publication?
- yes
- id
- 9b10a7d6-d954-4022-b5eb-0a6cb1daed06
- date added to LUP
- 2016-12-15 11:47:31
- date last changed
- 2025-01-12 17:47:41
@article{9b10a7d6-d954-4022-b5eb-0a6cb1daed06, abstract = {{<p>We demonstrate direct measurements of the spin-orbit interaction and Landé g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a Si/SiO<sub>2</sub> substrate and the measurements are performed in the Pauli spin-blockade regime. It is found that the double quantum dot exhibits a large singlet-triplet energy splitting of Δ<sub>ST</sub> ∼ 2.3 meV, a strong spin-orbit interaction of Δ<sub>SO</sub> ∼ 140 μeV, and a large and strongly level-dependent Landé g factor of ∼12.5. These results imply that single-crystal pure-phase InAs nanowires are desired semiconductor nanostructures for applications in quantum information technologies.</p>}}, author = {{Wang, Jiyin and Huang, Shaoyun and Lei, Zijin and Pan, Dong and Zhao, Jianhua and Xu, H. Q.}}, issn = {{0003-6951}}, language = {{eng}}, month = {{08}}, number = {{5}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime}}, url = {{http://dx.doi.org/10.1063/1.4960464}}, doi = {{10.1063/1.4960464}}, volume = {{109}}, year = {{2016}}, }