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Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime

Wang, Jiyin; Huang, Shaoyun; Lei, Zijin; Pan, Dong; Zhao, Jianhua and Xu, H. Q. LU (2016) In Applied Physics Letters 109(5).
Abstract

We demonstrate direct measurements of the spin-orbit interaction and Landé g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a Si/SiO2 substrate and the measurements are performed in the Pauli spin-blockade regime. It is found that the double quantum dot exhibits a large singlet-triplet energy splitting of ΔST ∼ 2.3 meV, a strong spin-orbit interaction of ΔSO ∼ 140 μeV, and a large and strongly level-dependent Landé g factor of ∼12.5. These results imply that single-crystal pure-phase InAs nanowires are desired semiconductor nanostructures for applications in quantum information... (More)

We demonstrate direct measurements of the spin-orbit interaction and Landé g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a Si/SiO2 substrate and the measurements are performed in the Pauli spin-blockade regime. It is found that the double quantum dot exhibits a large singlet-triplet energy splitting of ΔST ∼ 2.3 meV, a strong spin-orbit interaction of ΔSO ∼ 140 μeV, and a large and strongly level-dependent Landé g factor of ∼12.5. These results imply that single-crystal pure-phase InAs nanowires are desired semiconductor nanostructures for applications in quantum information technologies.

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Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
109
issue
5
publisher
American Institute of Physics
external identifiers
  • scopus:84982806755
  • wos:000383091400037
ISSN
0003-6951
DOI
10.1063/1.4960464
language
English
LU publication?
yes
id
9b10a7d6-d954-4022-b5eb-0a6cb1daed06
date added to LUP
2016-12-15 11:47:31
date last changed
2017-09-18 11:31:27
@article{9b10a7d6-d954-4022-b5eb-0a6cb1daed06,
  abstract     = {<p>We demonstrate direct measurements of the spin-orbit interaction and Landé g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a Si/SiO<sub>2</sub> substrate and the measurements are performed in the Pauli spin-blockade regime. It is found that the double quantum dot exhibits a large singlet-triplet energy splitting of Δ<sub>ST</sub> ∼ 2.3 meV, a strong spin-orbit interaction of Δ<sub>SO</sub> ∼ 140 μeV, and a large and strongly level-dependent Landé g factor of ∼12.5. These results imply that single-crystal pure-phase InAs nanowires are desired semiconductor nanostructures for applications in quantum information technologies.</p>},
  articleno    = {053106},
  author       = {Wang, Jiyin and Huang, Shaoyun and Lei, Zijin and Pan, Dong and Zhao, Jianhua and Xu, H. Q.},
  issn         = {0003-6951},
  language     = {eng},
  month        = {08},
  number       = {5},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime},
  url          = {http://dx.doi.org/10.1063/1.4960464},
  volume       = {109},
  year         = {2016},
}