Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Development of the Lattice Matched GaInP/GaInAs/Ge Triple Junction Solar Cell with an Efficiency Over 40%

Barrutia, L. ; García, I. ; Barrigón, E. LU ; Ochoa, M. ; Lombardero, I. ; Hinojosa, M. ; Caño, P. ; Bautista, J. ; Cifuentes, L. and Rey-Stolle, I. , et al. (2018) 12th Spanish Conference on Electron Devices, CDE 2018
Abstract

This paper summarizes the state-of-the-art of the lattice matched GaInP/Ga(In)As/Ge triple-junction solar cell developed at the Solar Energy Institute of UPM (IES-UPM). Different research topics tackled over the last years about this structure are described. As result of this work, an efficiency of ∼ 40% at ∼ 415 × is presented.

Please use this url to cite or link to this publication:
author
; ; ; ; ; ; ; ; and , et al. (More)
; ; ; ; ; ; ; ; ; and (Less)
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Ge wafers, III-V semiconductors, MOVPE, multijunction solar cell
host publication
Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018
editor
Mateos, Javier and Gonzalez, Tomas
article number
8596996
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
12th Spanish Conference on Electron Devices, CDE 2018
conference location
Salamanca, Spain
conference dates
2018-11-14 - 2018-11-16
external identifiers
  • scopus:85061480209
ISBN
978-1-5386-5779-9
DOI
10.1109/CDE.2018.8596996
language
English
LU publication?
yes
id
9d9722fb-9bbb-4974-857d-970756429874
date added to LUP
2019-03-15 14:05:27
date last changed
2021-12-02 08:41:12
@inproceedings{9d9722fb-9bbb-4974-857d-970756429874,
  abstract     = {<p>This paper summarizes the state-of-the-art of the lattice matched GaInP/Ga(In)As/Ge triple-junction solar cell developed at the Solar Energy Institute of UPM (IES-UPM). Different research topics tackled over the last years about this structure are described. As result of this work, an efficiency of ∼ 40% at ∼ 415 × is presented.</p>},
  author       = {Barrutia, L. and García, I. and Barrigón, E. and Ochoa, M. and Lombardero, I. and Hinojosa, M. and Caño, P. and Bautista, J. and Cifuentes, L. and Rey-Stolle, I. and Algora, C.},
  booktitle    = {Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018},
  editor       = {Mateos, Javier and Gonzalez, Tomas},
  isbn         = {978-1-5386-5779-9},
  language     = {eng},
  publisher    = {IEEE - Institute of Electrical and Electronics Engineers Inc.},
  title        = {Development of the Lattice Matched GaInP/GaInAs/Ge Triple Junction Solar Cell with an Efficiency Over 40%},
  url          = {http://dx.doi.org/10.1109/CDE.2018.8596996},
  doi          = {10.1109/CDE.2018.8596996},
  year         = {2018},
}