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Growth and optical properties of InxGa1−xP nanowires synthesized by selective-area epitaxy

Berg, Alexander LU ; Caroff, Philippe LU ; Shahid, Naeem; Lockrey, Mark N.; Yuan, Xiaoming; Borgström, Magnus T. LU ; Tan, Hark Hoe and Jagadish, Chennupati (2017) In Nano Research 10(2). p.672-682
Abstract

Ternary III–V nanowires (NWs) cover a wide range of wavelengths in the solar spectrum and would greatly benefit from being synthesized as position-controlled arrays for improved vertical yield, reproducibility, and tunable optical absorption. Here, we report on successful selective-area epitaxy of metal-particle-free vertical InxGa1−xP NW arrays using metal–organic vapor phase epitaxy and detail their optical properties. A systematic growth study establishes the range of suitable growth parameters to obtain uniform NW growth over a large array. The optical properties of the NWs were characterized by room-temperature cathodoluminescence spectroscopy. Tunability of the emission wavelength from 870 nm to approximately... (More)

Ternary III–V nanowires (NWs) cover a wide range of wavelengths in the solar spectrum and would greatly benefit from being synthesized as position-controlled arrays for improved vertical yield, reproducibility, and tunable optical absorption. Here, we report on successful selective-area epitaxy of metal-particle-free vertical InxGa1−xP NW arrays using metal–organic vapor phase epitaxy and detail their optical properties. A systematic growth study establishes the range of suitable growth parameters to obtain uniform NW growth over a large array. The optical properties of the NWs were characterized by room-temperature cathodoluminescence spectroscopy. Tunability of the emission wavelength from 870 nm to approximately 800 nm was achieved. Transmission electron microscopy and energy dispersive X-ray measurements performed on cross-section samples revealed a pure wurtzite crystal structure with very few stacking faults and a slight composition gradient along the NW growth axis. [Figure not available: see fulltext.]

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Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
cathodoluminescence, energy-dispersive X-ray spectroscopy, InGaP, nanowire, selective-area epitaxy
in
Nano Research
volume
10
issue
2
pages
11 pages
publisher
Springer
external identifiers
  • scopus:85001132459
  • wos:000394322300026
ISSN
1998-0124
DOI
10.1007/s12274-016-1325-1
language
English
LU publication?
yes
id
9e76fc2d-9880-4bec-b56b-42a05aa19336
date added to LUP
2016-12-28 14:39:45
date last changed
2018-01-07 11:42:58
@article{9e76fc2d-9880-4bec-b56b-42a05aa19336,
  abstract     = {<p>Ternary III–V nanowires (NWs) cover a wide range of wavelengths in the solar spectrum and would greatly benefit from being synthesized as position-controlled arrays for improved vertical yield, reproducibility, and tunable optical absorption. Here, we report on successful selective-area epitaxy of metal-particle-free vertical In<sub>x</sub>Ga<sub>1−x</sub>P NW arrays using metal–organic vapor phase epitaxy and detail their optical properties. A systematic growth study establishes the range of suitable growth parameters to obtain uniform NW growth over a large array. The optical properties of the NWs were characterized by room-temperature cathodoluminescence spectroscopy. Tunability of the emission wavelength from 870 nm to approximately 800 nm was achieved. Transmission electron microscopy and energy dispersive X-ray measurements performed on cross-section samples revealed a pure wurtzite crystal structure with very few stacking faults and a slight composition gradient along the NW growth axis. [Figure not available: see fulltext.]</p>},
  author       = {Berg, Alexander and Caroff, Philippe and Shahid, Naeem and Lockrey, Mark N. and Yuan, Xiaoming and Borgström, Magnus T. and Tan, Hark Hoe and Jagadish, Chennupati},
  issn         = {1998-0124},
  keyword      = {cathodoluminescence,energy-dispersive X-ray spectroscopy,InGaP,nanowire,selective-area epitaxy},
  language     = {eng},
  number       = {2},
  pages        = {672--682},
  publisher    = {Springer},
  series       = {Nano Research},
  title        = {Growth and optical properties of In<sub>x</sub>Ga<sub>1−x</sub>P nanowires synthesized by selective-area epitaxy},
  url          = {http://dx.doi.org/10.1007/s12274-016-1325-1},
  volume       = {10},
  year         = {2017},
}