Intrinsic three-dimensional topology in SrNbO3 films
(2025) In Physical Review B 111(15).- Abstract
Transition metal oxides, with their wide range of electronic and magnetic properties, offer a remarkable platform for developing future electronics based on unconventional quantum phenomena, such as topological phases. The formation of topologically nontrivial states is linked to crystalline symmetry, spin-orbit coupling, and magnetic ordering. Here, by employing angle-resolved photoemission spectroscopy (ARPES), supported by density functional theory (DFT) calculations, we demonstrated that intrinsic octahedral rotations in SrNbO3 films drive the emergence of non-trivial band topology. Specifically, ARPES reveals and diffraction data confirm the presence of in-phase a0a0c+ octahedral rotation, leading to the formation of topologically... (More)
Transition metal oxides, with their wide range of electronic and magnetic properties, offer a remarkable platform for developing future electronics based on unconventional quantum phenomena, such as topological phases. The formation of topologically nontrivial states is linked to crystalline symmetry, spin-orbit coupling, and magnetic ordering. Here, by employing angle-resolved photoemission spectroscopy (ARPES), supported by density functional theory (DFT) calculations, we demonstrated that intrinsic octahedral rotations in SrNbO3 films drive the emergence of non-trivial band topology. Specifically, ARPES reveals and diffraction data confirm the presence of in-phase a0a0c+ octahedral rotation, leading to the formation of topologically protected Dirac band crossings, giving rise to massless fermions in this system. Our study underscores the pivotal role of structural distortions in transition metal oxides, illustrating how they can be strategically harnessed to unlock and stabilize quantum topological states. This approach contributes to the broader understanding of quantum materials and their promising applications in advanced technologies.
(Less)
- author
- organization
- publishing date
- 2025-04-15
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B
- volume
- 111
- issue
- 15
- article number
- 155146
- publisher
- American Physical Society
- external identifiers
-
- scopus:105003913917
- ISSN
- 2469-9950
- DOI
- 10.1103/PhysRevB.111.155146
- language
- English
- LU publication?
- yes
- additional info
- Publisher Copyright: © 2025 authors. Published by the American Physical Society. Published by the American Physical Society under the terms of the "https://creativecommons.org/licenses/by/4.0/"Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.
- id
- a0fd082d-5b8a-4a75-8016-1a47e7614e11
- date added to LUP
- 2025-08-11 15:26:46
- date last changed
- 2025-08-11 15:26:54
@article{a0fd082d-5b8a-4a75-8016-1a47e7614e11, abstract = {{<p>Transition metal oxides, with their wide range of electronic and magnetic properties, offer a remarkable platform for developing future electronics based on unconventional quantum phenomena, such as topological phases. The formation of topologically nontrivial states is linked to crystalline symmetry, spin-orbit coupling, and magnetic ordering. Here, by employing angle-resolved photoemission spectroscopy (ARPES), supported by density functional theory (DFT) calculations, we demonstrated that intrinsic octahedral rotations in SrNbO3 films drive the emergence of non-trivial band topology. Specifically, ARPES reveals and diffraction data confirm the presence of in-phase a0a0c+ octahedral rotation, leading to the formation of topologically protected Dirac band crossings, giving rise to massless fermions in this system. Our study underscores the pivotal role of structural distortions in transition metal oxides, illustrating how they can be strategically harnessed to unlock and stabilize quantum topological states. This approach contributes to the broader understanding of quantum materials and their promising applications in advanced technologies.</p>}}, author = {{Chikina, A. and Rosendal, V. and Li, H. and Skoropata, E. and Guedes, E. B. and Caputo, M. and Plumb, N. C. and Shi, M. and Petersen, D. H. and Brandbyge, M. and Brito, W. H. and Pomjakushina, E. and Scagnoli, V. and Lyu, J. and Medarde, M. and Staub, U. and Huang, S. W. and Müller Gubler, E. A. and Baumberger, F. and Pryds, N. and Radovic, M.}}, issn = {{2469-9950}}, language = {{eng}}, month = {{04}}, number = {{15}}, publisher = {{American Physical Society}}, series = {{Physical Review B}}, title = {{Intrinsic three-dimensional topology in SrNbO3 films}}, url = {{http://dx.doi.org/10.1103/PhysRevB.111.155146}}, doi = {{10.1103/PhysRevB.111.155146}}, volume = {{111}}, year = {{2025}}, }