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Intrinsic three-dimensional topology in SrNbO3 films

Chikina, A. ; Rosendal, V. ; Li, H. ; Skoropata, E. ; Guedes, E. B. ; Caputo, M. LU ; Plumb, N. C. ; Shi, M. ; Petersen, D. H. and Brandbyge, M. , et al. (2025) In Physical Review B 111(15).
Abstract

Transition metal oxides, with their wide range of electronic and magnetic properties, offer a remarkable platform for developing future electronics based on unconventional quantum phenomena, such as topological phases. The formation of topologically nontrivial states is linked to crystalline symmetry, spin-orbit coupling, and magnetic ordering. Here, by employing angle-resolved photoemission spectroscopy (ARPES), supported by density functional theory (DFT) calculations, we demonstrated that intrinsic octahedral rotations in SrNbO3 films drive the emergence of non-trivial band topology. Specifically, ARPES reveals and diffraction data confirm the presence of in-phase a0a0c+ octahedral rotation, leading to the formation of topologically... (More)

Transition metal oxides, with their wide range of electronic and magnetic properties, offer a remarkable platform for developing future electronics based on unconventional quantum phenomena, such as topological phases. The formation of topologically nontrivial states is linked to crystalline symmetry, spin-orbit coupling, and magnetic ordering. Here, by employing angle-resolved photoemission spectroscopy (ARPES), supported by density functional theory (DFT) calculations, we demonstrated that intrinsic octahedral rotations in SrNbO3 films drive the emergence of non-trivial band topology. Specifically, ARPES reveals and diffraction data confirm the presence of in-phase a0a0c+ octahedral rotation, leading to the formation of topologically protected Dirac band crossings, giving rise to massless fermions in this system. Our study underscores the pivotal role of structural distortions in transition metal oxides, illustrating how they can be strategically harnessed to unlock and stabilize quantum topological states. This approach contributes to the broader understanding of quantum materials and their promising applications in advanced technologies.

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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B
volume
111
issue
15
article number
155146
publisher
American Physical Society
external identifiers
  • scopus:105003913917
ISSN
2469-9950
DOI
10.1103/PhysRevB.111.155146
language
English
LU publication?
yes
additional info
Publisher Copyright: © 2025 authors. Published by the American Physical Society. Published by the American Physical Society under the terms of the "https://creativecommons.org/licenses/by/4.0/"Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.
id
a0fd082d-5b8a-4a75-8016-1a47e7614e11
date added to LUP
2025-08-11 15:26:46
date last changed
2025-08-11 15:26:54
@article{a0fd082d-5b8a-4a75-8016-1a47e7614e11,
  abstract     = {{<p>Transition metal oxides, with their wide range of electronic and magnetic properties, offer a remarkable platform for developing future electronics based on unconventional quantum phenomena, such as topological phases. The formation of topologically nontrivial states is linked to crystalline symmetry, spin-orbit coupling, and magnetic ordering. Here, by employing angle-resolved photoemission spectroscopy (ARPES), supported by density functional theory (DFT) calculations, we demonstrated that intrinsic octahedral rotations in SrNbO3 films drive the emergence of non-trivial band topology. Specifically, ARPES reveals and diffraction data confirm the presence of in-phase a0a0c+ octahedral rotation, leading to the formation of topologically protected Dirac band crossings, giving rise to massless fermions in this system. Our study underscores the pivotal role of structural distortions in transition metal oxides, illustrating how they can be strategically harnessed to unlock and stabilize quantum topological states. This approach contributes to the broader understanding of quantum materials and their promising applications in advanced technologies.</p>}},
  author       = {{Chikina, A. and Rosendal, V. and Li, H. and Skoropata, E. and Guedes, E. B. and Caputo, M. and Plumb, N. C. and Shi, M. and Petersen, D. H. and Brandbyge, M. and Brito, W. H. and Pomjakushina, E. and Scagnoli, V. and Lyu, J. and Medarde, M. and Staub, U. and Huang, S. W. and Müller Gubler, E. A. and Baumberger, F. and Pryds, N. and Radovic, M.}},
  issn         = {{2469-9950}},
  language     = {{eng}},
  month        = {{04}},
  number       = {{15}},
  publisher    = {{American Physical Society}},
  series       = {{Physical Review B}},
  title        = {{Intrinsic three-dimensional topology in SrNbO3 films}},
  url          = {{http://dx.doi.org/10.1103/PhysRevB.111.155146}},
  doi          = {{10.1103/PhysRevB.111.155146}},
  volume       = {{111}},
  year         = {{2025}},
}