Advanced

Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates : challenges and prospects for integration of III-Vs on Si

Vukajlovic-Plestina, Jelena ; Dubrovskii, Vladimir G ; Tütüncuoǧlu, Gözde ; Potts, Heidi LU ; Ricca, Ruben ; Meyer, Frank ; Matteini, Federico ; Leran, Jean-Baptiste and I Morral, Anna Fontcuberta (2016) In Nanotechnology 27(45). p.455601-455601
Abstract

Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam epitaxy of InAs nanowires in SiO2/Si nanotube templates. We show how and under which conditions the nanowire growth is initiated by In-assisted vapor-liquid-solid growth enabled by the local conditions inside the nanotube template. The conditions for high yield of vertical nanowires are investigated in terms of the nanotube depth, diameter and V/III flux ratios. We present a model that further substantiates our findings. This work opens new perspectives for monolithic integration of... (More)

Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam epitaxy of InAs nanowires in SiO2/Si nanotube templates. We show how and under which conditions the nanowire growth is initiated by In-assisted vapor-liquid-solid growth enabled by the local conditions inside the nanotube template. The conditions for high yield of vertical nanowires are investigated in terms of the nanotube depth, diameter and V/III flux ratios. We present a model that further substantiates our findings. This work opens new perspectives for monolithic integration of III-Vs on the silicon platform enabling new applications in the electronics, optoelectronics and energy harvesting arena.

(Less)
Please use this url to cite or link to this publication:
author
publishing date
type
Contribution to journal
publication status
published
in
Nanotechnology
volume
27
issue
45
pages
455601 - 455601
publisher
IOP Publishing
external identifiers
  • pmid:27698287
  • scopus:84991669585
ISSN
0957-4484
DOI
10.1088/0957-4484/27/45/455601
language
English
LU publication?
no
id
a5b45989-60df-4686-bccf-c628f94be2dc
date added to LUP
2019-05-15 09:53:03
date last changed
2019-11-20 05:43:31
@article{a5b45989-60df-4686-bccf-c628f94be2dc,
  abstract     = {<p>Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam epitaxy of InAs nanowires in SiO2/Si nanotube templates. We show how and under which conditions the nanowire growth is initiated by In-assisted vapor-liquid-solid growth enabled by the local conditions inside the nanotube template. The conditions for high yield of vertical nanowires are investigated in terms of the nanotube depth, diameter and V/III flux ratios. We present a model that further substantiates our findings. This work opens new perspectives for monolithic integration of III-Vs on the silicon platform enabling new applications in the electronics, optoelectronics and energy harvesting arena.</p>},
  author       = {Vukajlovic-Plestina, Jelena and Dubrovskii, Vladimir G and Tütüncuoǧlu, Gözde and Potts, Heidi and Ricca, Ruben and Meyer, Frank and Matteini, Federico and Leran, Jean-Baptiste and I Morral, Anna Fontcuberta},
  issn         = {0957-4484},
  language     = {eng},
  month        = {11},
  number       = {45},
  pages        = {455601--455601},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates : challenges and prospects for integration of III-Vs on Si},
  url          = {http://dx.doi.org/10.1088/0957-4484/27/45/455601},
  doi          = {10.1088/0957-4484/27/45/455601},
  volume       = {27},
  year         = {2016},
}