Electrons and holes in amorphous silicon
Weaire, D. and Hobbs, David LU
(1993)
In Philosophical Magazine Letters
68(4).
p.265-272
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4362128
- author
- Weaire, D.
and Hobbs, David
LU
- publishing date
- 1993
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Philosophical Magazine Letters
- volume
- 68
- issue
- 4
- pages
- 265 - 272
- publisher
- Taylor & Francis
- external identifiers
-
- scopus:5844415578
- ISSN
- 1362-3036
- language
- English
- LU publication?
- no
- id
- a747bd78-cad9-4266-a179-331a5663fedb (old id 4362128)
- date added to LUP
- 2016-04-04 08:34:32
- date last changed
- 2021-01-03 06:07:20
@article{a747bd78-cad9-4266-a179-331a5663fedb,
author = {{Weaire, D. and Hobbs, David}},
issn = {{1362-3036}},
language = {{eng}},
number = {{4}},
pages = {{265--272}},
publisher = {{Taylor & Francis}},
series = {{Philosophical Magazine Letters}},
title = {{Electrons and holes in amorphous silicon}},
volume = {{68}},
year = {{1993}},
}