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Intracavity double diode structures with GaInP barrier layers for thermophotonic cooling

Tiira, Jonna ; Radevici, Ivan ; Haggren, Tuomas ; Hakkarainen, Teemu ; Kivisaari, Pyry LU ; Lyytikäinen, Jari ; Aho, Arto ; Tukiainen, Antti ; Guina, Mircea and Oksanen, Jani (2017) Optical and Electronic Cooling of Solids II 2017 10121.
Abstract

Optical cooling of semiconductors has recently been demonstrated both for optically pumped CdS nanobelts and for electrically injected GaInAsSb LEDs at very low powers. To enable cooling at larger power and to understand and overcome the main obstacles in optical cooling of conventional semiconductor structures, we study thermophotonic (TPX) heat transport in cavity coupled light emitters. Our structures consist of a double heterojunction (DHJ) LED with a GaAs active layer and a corresponding DHJ or a p-n-homojunction photodiode, enclosed within a single semiconductor cavity to eliminate the light extraction challenges. Our presently studied double diode structures (DDS) use GaInP barriers around the GaAs active layer instead of the... (More)

Optical cooling of semiconductors has recently been demonstrated both for optically pumped CdS nanobelts and for electrically injected GaInAsSb LEDs at very low powers. To enable cooling at larger power and to understand and overcome the main obstacles in optical cooling of conventional semiconductor structures, we study thermophotonic (TPX) heat transport in cavity coupled light emitters. Our structures consist of a double heterojunction (DHJ) LED with a GaAs active layer and a corresponding DHJ or a p-n-homojunction photodiode, enclosed within a single semiconductor cavity to eliminate the light extraction challenges. Our presently studied double diode structures (DDS) use GaInP barriers around the GaAs active layer instead of the AlGaAs barriers used in our previous structures. We characterize our updated double diode structures by four point probe IV-measurements and measure how the material modifications affect the recombination parameters and coupling quantum efficiencies in the structures. The coupling quantum efficiency of the new devices with InGaP barrier layers is found to be approximately 10 % larger than for the structures with AlGaAs barriers at the point of maximum efficiency.

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author
; ; ; ; ; ; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
double diode structures, electroluminescent cooling, III-V semiconductors, quantum efficiency, radiative and non-radiative recombination
host publication
Optical and Electronic Cooling of Solids II
volume
10121
article number
1012109
publisher
SPIE
conference name
Optical and Electronic Cooling of Solids II 2017
conference location
San Francisco, United States
conference dates
2017-02-01 - 2017-02-02
external identifiers
  • wos:000404886900006
  • scopus:85020238937
ISBN
9781510606838
DOI
10.1117/12.2250843
language
English
LU publication?
yes
id
a7ca582f-9be5-4de9-9510-a696ef4d9705
date added to LUP
2017-06-30 11:50:57
date last changed
2025-01-06 15:54:17
@inproceedings{a7ca582f-9be5-4de9-9510-a696ef4d9705,
  abstract     = {{<p>Optical cooling of semiconductors has recently been demonstrated both for optically pumped CdS nanobelts and for electrically injected GaInAsSb LEDs at very low powers. To enable cooling at larger power and to understand and overcome the main obstacles in optical cooling of conventional semiconductor structures, we study thermophotonic (TPX) heat transport in cavity coupled light emitters. Our structures consist of a double heterojunction (DHJ) LED with a GaAs active layer and a corresponding DHJ or a p-n-homojunction photodiode, enclosed within a single semiconductor cavity to eliminate the light extraction challenges. Our presently studied double diode structures (DDS) use GaInP barriers around the GaAs active layer instead of the AlGaAs barriers used in our previous structures. We characterize our updated double diode structures by four point probe IV-measurements and measure how the material modifications affect the recombination parameters and coupling quantum efficiencies in the structures. The coupling quantum efficiency of the new devices with InGaP barrier layers is found to be approximately 10 % larger than for the structures with AlGaAs barriers at the point of maximum efficiency.</p>}},
  author       = {{Tiira, Jonna and Radevici, Ivan and Haggren, Tuomas and Hakkarainen, Teemu and Kivisaari, Pyry and Lyytikäinen, Jari and Aho, Arto and Tukiainen, Antti and Guina, Mircea and Oksanen, Jani}},
  booktitle    = {{Optical and Electronic Cooling of Solids II}},
  isbn         = {{9781510606838}},
  keywords     = {{double diode structures; electroluminescent cooling; III-V semiconductors; quantum efficiency; radiative and non-radiative recombination}},
  language     = {{eng}},
  publisher    = {{SPIE}},
  title        = {{Intracavity double diode structures with GaInP barrier layers for thermophotonic cooling}},
  url          = {{http://dx.doi.org/10.1117/12.2250843}},
  doi          = {{10.1117/12.2250843}},
  volume       = {{10121}},
  year         = {{2017}},
}