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InxGa1-xP Nanowire Growth Dynamics Strongly Affected by Doping Using Diethylzinc

Otnes, Gaute LU ; Heurlin, Magnus LU ; Zeng, Xulu LU and Borgström, Magnus T. LU (2017) In Nano Letters 17(2). p.702-707
Abstract

Semiconductor nanowires are versatile building blocks for optoelectronic devices, in part because nanowires offer an increased freedom in material design due to relaxed constraints on lattice matching during the epitaxial growth. This enables the growth of ternary alloy nanowires in which the bandgap is tunable over a large energy range, desirable for optoelectronic devices. However, little is known about the effects of doping in the ternary nanowire materials, a prerequisite for applications. Here we present a study of p-doping of InxGa1-xP nanowires and show that the growth dynamics are strongly affected when diethylzinc is used as a dopant precursor. Specifically, using in situ optical reflectometry and... (More)

Semiconductor nanowires are versatile building blocks for optoelectronic devices, in part because nanowires offer an increased freedom in material design due to relaxed constraints on lattice matching during the epitaxial growth. This enables the growth of ternary alloy nanowires in which the bandgap is tunable over a large energy range, desirable for optoelectronic devices. However, little is known about the effects of doping in the ternary nanowire materials, a prerequisite for applications. Here we present a study of p-doping of InxGa1-xP nanowires and show that the growth dynamics are strongly affected when diethylzinc is used as a dopant precursor. Specifically, using in situ optical reflectometry and high-resolution transmission electron microscopy we show that the doping results in a smaller nanowire diameter, a more predominant zincblende crystal structure, a more Ga-rich composition, and an increased axial growth rate. We attribute these effects to changes in seed particle wetting angle and increased TMGa pyrolysis efficiency upon introducing diethylzinc. Lastly, we demonstrate degenerate p-doping levels in InxGa1-xP nanowires by the realization of an Esaki tunnel diode. Our findings provide insights into the growth dynamics of ternary alloy nanowires during doping, thus potentially enabling the realization of such nanowires with high compositional homogeneity and controlled doping for high-performance optoelectronics devices.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
crystal structure, doping, InGaP, MOVPE, Nanowire, ternary compound
in
Nano Letters
volume
17
issue
2
pages
6 pages
publisher
The American Chemical Society
external identifiers
  • scopus:85011999813
  • wos:000393848800015
ISSN
1530-6984
DOI
10.1021/acs.nanolett.6b03795
language
English
LU publication?
yes
id
a95da5fa-6de8-4546-a457-3a6c0f361afa
date added to LUP
2017-02-23 07:34:08
date last changed
2018-08-05 04:38:42
@article{a95da5fa-6de8-4546-a457-3a6c0f361afa,
  abstract     = {<p>Semiconductor nanowires are versatile building blocks for optoelectronic devices, in part because nanowires offer an increased freedom in material design due to relaxed constraints on lattice matching during the epitaxial growth. This enables the growth of ternary alloy nanowires in which the bandgap is tunable over a large energy range, desirable for optoelectronic devices. However, little is known about the effects of doping in the ternary nanowire materials, a prerequisite for applications. Here we present a study of p-doping of In<sub>x</sub>Ga<sub>1-x</sub>P nanowires and show that the growth dynamics are strongly affected when diethylzinc is used as a dopant precursor. Specifically, using in situ optical reflectometry and high-resolution transmission electron microscopy we show that the doping results in a smaller nanowire diameter, a more predominant zincblende crystal structure, a more Ga-rich composition, and an increased axial growth rate. We attribute these effects to changes in seed particle wetting angle and increased TMGa pyrolysis efficiency upon introducing diethylzinc. Lastly, we demonstrate degenerate p-doping levels in In<sub>x</sub>Ga<sub>1-x</sub>P nanowires by the realization of an Esaki tunnel diode. Our findings provide insights into the growth dynamics of ternary alloy nanowires during doping, thus potentially enabling the realization of such nanowires with high compositional homogeneity and controlled doping for high-performance optoelectronics devices.</p>},
  author       = {Otnes, Gaute and Heurlin, Magnus and Zeng, Xulu and Borgström, Magnus T.},
  issn         = {1530-6984},
  keyword      = {crystal structure,doping,InGaP,MOVPE,Nanowire,ternary compound},
  language     = {eng},
  month        = {02},
  number       = {2},
  pages        = {702--707},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {In<sub>x</sub>Ga<sub>1-x</sub>P Nanowire Growth Dynamics Strongly Affected by Doping Using Diethylzinc},
  url          = {http://dx.doi.org/10.1021/acs.nanolett.6b03795},
  volume       = {17},
  year         = {2017},
}