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Metal oxide nanoparticles as novel gate materials for field-effect gas sensors

Roy, S ; Salomonsson, A ; Lloyd Spetz, A ; Aulin, C ; Kall, PO ; Ojamae, L ; Strand, M and Sanati, Mehri LU (2006) In Materials and Manufacturing Processes 21(3). p.275-278
Abstract
Oxide nanoparticle layers have shown interesting behavior as gate materials for high temperature (typically at 300-400°C) metal-insulator-silicon carbide (MISiC) capacitive sensors. Distinct shifts in the depletion region of the C-V (capacitance-voltage) characteristics could be observed while switching between different oxidizing and reducing gas ambients (air, O2, H2, NH3, CO, NOx, C3H6). Shifts were also noticed in the accumulation region of the C-V curves, which can be attributed to the change in resistivity of the gate material. Sensor response patterns have been found to depend on operating temperature.
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author
; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
accumulation region, adsorption, capacitance voltage (C-V), depletion region, field-effect, gas sensors, gate material, high frequency, high temperature, interface, metal-insulator-seimconductor (MISIC), nano particles, ruthenium oxide, silicon carbide, transient response
in
Materials and Manufacturing Processes
volume
21
issue
3
pages
275 - 278
publisher
Taylor & Francis
external identifiers
  • scopus:33645794804
ISSN
1042-6914
DOI
10.1080/10426910500464651
language
English
LU publication?
yes
id
ab2caaaa-c428-4c24-ab1b-cfc8c087ce4c (old id 644596)
date added to LUP
2016-04-04 13:36:37
date last changed
2022-01-30 00:35:11
@article{ab2caaaa-c428-4c24-ab1b-cfc8c087ce4c,
  abstract     = {{Oxide nanoparticle layers have shown interesting behavior as gate materials for high temperature (typically at 300-400°C) metal-insulator-silicon carbide (MISiC) capacitive sensors. Distinct shifts in the depletion region of the C-V (capacitance-voltage) characteristics could be observed while switching between different oxidizing and reducing gas ambients (air, O2, H2, NH3, CO, NOx, C3H6). Shifts were also noticed in the accumulation region of the C-V curves, which can be attributed to the change in resistivity of the gate material. Sensor response patterns have been found to depend on operating temperature.}},
  author       = {{Roy, S and Salomonsson, A and Lloyd Spetz, A and Aulin, C and Kall, PO and Ojamae, L and Strand, M and Sanati, Mehri}},
  issn         = {{1042-6914}},
  keywords     = {{accumulation region; adsorption; capacitance voltage (C-V); depletion region; field-effect; gas sensors; gate material; high frequency; high temperature; interface; metal-insulator-seimconductor (MISIC); nano particles; ruthenium oxide; silicon carbide; transient response}},
  language     = {{eng}},
  number       = {{3}},
  pages        = {{275--278}},
  publisher    = {{Taylor & Francis}},
  series       = {{Materials and Manufacturing Processes}},
  title        = {{Metal oxide nanoparticles as novel gate materials for field-effect gas sensors}},
  url          = {{http://dx.doi.org/10.1080/10426910500464651}},
  doi          = {{10.1080/10426910500464651}},
  volume       = {{21}},
  year         = {{2006}},
}