Transient photocurrent of bulk heterojunction solar cell characterized by ns-laser and sub-ms LED
Infahsaeng, Yingyot ; Danna, Daniele ; Tang, Zheng ; Pascher, Torbjörn LU ; Inganas, Olle ; Sundström, Villy LU and Yartsev, Arkady LU
(2015)
International Conference on Photonics Solutions (ICPS)
9659.
- Abstract
- We measure the transient photocurrent of APFO3:PCBM bulk heterojunction solar cells illuminated with ns-laser and sub-ms LED light sources. The ratio of the number of collective charges to the number of excited photon (external quantum efficiency, EQE) and the transient photocurrent fall times have been carried out with difference pulse durations and fluences. The EQEs characterized by ns-laser source are shown to obey the bimolecular recombination at high excitation fluences. The increasing of transient photocurrent fall times suggests that the fall times of free charge carriers are effected by deep trap density of state (DoS) and thus the free charge carriers have a sufficient time for bimolecular recombination at short circuit... (More)
- We measure the transient photocurrent of APFO3:PCBM bulk heterojunction solar cells illuminated with ns-laser and sub-ms LED light sources. The ratio of the number of collective charges to the number of excited photon (external quantum efficiency, EQE) and the transient photocurrent fall times have been carried out with difference pulse durations and fluences. The EQEs characterized by ns-laser source are shown to obey the bimolecular recombination at high excitation fluences. The increasing of transient photocurrent fall times suggests that the fall times of free charge carriers are effected by deep trap density of state (DoS) and thus the free charge carriers have a sufficient time for bimolecular recombination at short circuit condition. At the same fluences, however, the EQEs characterized by sub-ms LED sources exhibit an excitation fluences independence of EQE. The transient photocurrent fall times with sub-ms LED sources are rather constant when the excitation fluences increases indicating that the deep trap DoS has less effect at short circuit condition for longer pulse duration. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/8556711
- author
- Infahsaeng, Yingyot
; Danna, Daniele
; Tang, Zheng
; Pascher, Torbjörn
LU
; Inganas, Olle
; Sundström, Villy
LU
and Yartsev, Arkady
LU
- organization
- publishing date
- 2015
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Transient photocurrent, Organic Solar Cells, Bulk heterojunction, APFO3
- host publication
- Proceedings of SPIE
- volume
- 9659
- article number
- 96591C
- publisher
- SPIE
- conference name
- International Conference on Photonics Solutions (ICPS)
- conference location
- Hua Hin, Thailand
- conference dates
- 2015-07-06 - 2015-07-08
- external identifiers
-
- wos:000366498800046
- scopus:84960860534
- ISSN
- 0277-786X
- 1996-756X
- DOI
- 10.1117/12.2195857
- language
- English
- LU publication?
- yes
- id
- ae25b13f-3bff-45ce-bd81-45d93bd05693 (old id 8556711)
- date added to LUP
- 2016-04-01 09:58:23
- date last changed
- 2024-01-06 04:46:07
@inproceedings{ae25b13f-3bff-45ce-bd81-45d93bd05693,
abstract = {{We measure the transient photocurrent of APFO3:PCBM bulk heterojunction solar cells illuminated with ns-laser and sub-ms LED light sources. The ratio of the number of collective charges to the number of excited photon (external quantum efficiency, EQE) and the transient photocurrent fall times have been carried out with difference pulse durations and fluences. The EQEs characterized by ns-laser source are shown to obey the bimolecular recombination at high excitation fluences. The increasing of transient photocurrent fall times suggests that the fall times of free charge carriers are effected by deep trap density of state (DoS) and thus the free charge carriers have a sufficient time for bimolecular recombination at short circuit condition. At the same fluences, however, the EQEs characterized by sub-ms LED sources exhibit an excitation fluences independence of EQE. The transient photocurrent fall times with sub-ms LED sources are rather constant when the excitation fluences increases indicating that the deep trap DoS has less effect at short circuit condition for longer pulse duration.}},
author = {{Infahsaeng, Yingyot and Danna, Daniele and Tang, Zheng and Pascher, Torbjörn and Inganas, Olle and Sundström, Villy and Yartsev, Arkady}},
booktitle = {{Proceedings of SPIE}},
issn = {{0277-786X}},
keywords = {{Transient photocurrent; Organic Solar Cells; Bulk heterojunction; APFO3}},
language = {{eng}},
publisher = {{SPIE}},
title = {{Transient photocurrent of bulk heterojunction solar cell characterized by ns-laser and sub-ms LED}},
url = {{http://dx.doi.org/10.1117/12.2195857}},
doi = {{10.1117/12.2195857}},
volume = {{9659}},
year = {{2015}},
}