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Concurrent Dual-Band Power Amplifier using Coupling Matching Network for 60 GHz WPAN Applications

Aliakbariabar, Hanieh LU ; Abdipour, A. and Mirzavand, R. (2015) In Microelectronics and Solid State Electronics 4(1). p.1-7
Abstract
A new fully-integrated concurrent dual band CMOS power amplifier (PA) which covers the first and third channels of IEEE 802.15.3c standard is presented. In order to achieve concurrent operation of the 60 GHz PA in two desired narrow frequency bands, the multi-frequency passive coupling matching networks design is proposed. The full wave electromagnetic analysis (by the conventional Method of Moments (MOM)) and circuit analysis (using Circuit Envelope (CE)) are performed for the passive and active parts, respectively, in order to completely characterize the PA structure. This PA model has also been used in system level simulations. The results have shown two fractional bandwidths of 5% and 3%, P1dB of 8.8 dBm and 7.9 dBm at 58.32 and 62.64... (More)
A new fully-integrated concurrent dual band CMOS power amplifier (PA) which covers the first and third channels of IEEE 802.15.3c standard is presented. In order to achieve concurrent operation of the 60 GHz PA in two desired narrow frequency bands, the multi-frequency passive coupling matching networks design is proposed. The full wave electromagnetic analysis (by the conventional Method of Moments (MOM)) and circuit analysis (using Circuit Envelope (CE)) are performed for the passive and active parts, respectively, in order to completely characterize the PA structure. This PA model has also been used in system level simulations. The results have shown two fractional bandwidths of 5% and 3%, P1dB of 8.8 dBm and 7.9 dBm at 58.32 and 62.64 GHz, respectively. Maximum power added efficiency (PAE) of 13% is achieved in both targeted bands. Performance of this PA shows promising availability in the future dual band WPAN applications. (Less)
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Contribution to journal
publication status
published
subject
in
Microelectronics and Solid State Electronics
volume
4
issue
1
pages
1 - 7
DOI
10.5923/j.msse.20150401.01
language
English
LU publication?
no
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afe573fd-0da1-4514-b35c-ed068061150f
date added to LUP
2017-12-13 14:41:42
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2017-12-14 13:12:54
@article{afe573fd-0da1-4514-b35c-ed068061150f,
  abstract     = {A new fully-integrated concurrent dual band CMOS power amplifier (PA) which covers the first and third channels of IEEE 802.15.3c standard is presented. In order to achieve concurrent operation of the 60 GHz PA in two desired narrow frequency bands, the multi-frequency passive coupling matching networks design is proposed. The full wave electromagnetic analysis (by the conventional Method of Moments (MOM)) and circuit analysis (using Circuit Envelope (CE)) are performed for the passive and active parts, respectively, in order to completely characterize the PA structure. This PA model has also been used in system level simulations. The results have shown two fractional bandwidths of 5% and 3%, P1dB of 8.8 dBm and 7.9 dBm at 58.32 and 62.64 GHz, respectively. Maximum power added efficiency (PAE) of 13% is achieved in both targeted bands. Performance of this PA shows promising availability in the future dual band WPAN applications. },
  author       = {Aliakbariabar, Hanieh and Abdipour,  A.  and Mirzavand,  R. },
  language     = {eng},
  number       = {1},
  pages        = {1--7},
  series       = { Microelectronics and Solid State Electronics},
  title        = {Concurrent Dual-Band Power Amplifier using Coupling Matching Network for 60 GHz WPAN Applications},
  url          = {http://dx.doi.org/10.5923/j.msse.20150401.01},
  volume       = {4},
  year         = {2015},
}