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Novel nanoelectronic device applications based on the nonlinearity of three-terminal ballistic junctions

Sun, Jie LU ; Wallin, Daniel LU ; Brusheim, Patrik LU ; Maximov, Ivan LU ; Wang, Z. G. and Xu, Hongqi LU (2007) 28th International Conference on the Physics of Semiconductors (ICPS-28) 893. p.1471-1472
Abstract
Nanometer-scale electron devices containing three-terminal ballistic junctions are fabricated by electron-beam lithography on InP/InGaAs two-dimensional electron gas materials. Based on the intrinsic nonlinearity of the devices, frequency mixer, phase detector and RS flip-flop memory functioning at room temperature are successfully achieved. The devices have simple structure layout and small size, and are expected to function at high speed.
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author
; ; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
frequency mixer, three-terminal ballistic junctions, flip-flop memory, phase detector, RS
host publication
Physics of Semiconductors, Pts A and B
volume
893
pages
1471 - 1472
publisher
American Institute of Physics (AIP)
conference name
28th International Conference on the Physics of Semiconductors (ICPS-28)
conference location
Vienna, Austria
conference dates
2006-07-24 - 2006-07-28
external identifiers
  • wos:000246281800723
  • scopus:77958515016
ISSN
1551-7616
0094-243X
DOI
10.1063/1.2730463
language
English
LU publication?
yes
id
b0399e00-7ba4-4b20-966c-cf9c1d152b77 (old id 1409893)
date added to LUP
2016-04-01 12:22:28
date last changed
2024-10-09 07:48:35
@inproceedings{b0399e00-7ba4-4b20-966c-cf9c1d152b77,
  abstract     = {{Nanometer-scale electron devices containing three-terminal ballistic junctions are fabricated by electron-beam lithography on InP/InGaAs two-dimensional electron gas materials. Based on the intrinsic nonlinearity of the devices, frequency mixer, phase detector and RS flip-flop memory functioning at room temperature are successfully achieved. The devices have simple structure layout and small size, and are expected to function at high speed.}},
  author       = {{Sun, Jie and Wallin, Daniel and Brusheim, Patrik and Maximov, Ivan and Wang, Z. G. and Xu, Hongqi}},
  booktitle    = {{Physics of Semiconductors, Pts A and B}},
  issn         = {{1551-7616}},
  keywords     = {{frequency mixer; three-terminal ballistic junctions; flip-flop memory; phase detector; RS}},
  language     = {{eng}},
  pages        = {{1471--1472}},
  publisher    = {{American Institute of Physics (AIP)}},
  title        = {{Novel nanoelectronic device applications based on the nonlinearity of three-terminal ballistic junctions}},
  url          = {{http://dx.doi.org/10.1063/1.2730463}},
  doi          = {{10.1063/1.2730463}},
  volume       = {{893}},
  year         = {{2007}},
}