Mn-doped AlN films were prepared by magnetron reactive sputtering system. The preparation conditions were optimized to give pure single-phase AlMnN films. The films were deposited on quartz substrates. The single-phase films were obtained in argon-nitrogen pressure of 6 mTorr and a substrate temperature of 300 °C. The films typically had a thickness of 0.4 μm. The XRD pattern indicated a pure AlMnN phase. The concentration of Mn was determined by energy dispersive X-ray and X-ray photoemission spectrometry. The saturation magnetization (M s
) decreased with increasing Mn concentration exponentially. A maximum M
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Mn-doped AlN films were prepared by magnetron reactive sputtering system. The preparation conditions were optimized to give pure single-phase AlMnN films. The films were deposited on quartz substrates. The single-phase films were obtained in argon-nitrogen pressure of 6 mTorr and a substrate temperature of 300 °C. The films typically had a thickness of 0.4 μm. The XRD pattern indicated a pure AlMnN phase. The concentration of Mn was determined by energy dispersive X-ray and X-ray photoemission spectrometry. The saturation magnetization (M s
) decreased with increasing Mn concentration exponentially. A maximum M s
of 9.58 emu/cm 3
was obtained at room temperature with Mn doping of 4.5%. The optical band gap decreased from 6.2 to 4.95 eV with increasing Mn concentration from 0 to 13.6% with same trend to magnetic properties. The change of the optical band gap was strongly correlated with magnetization data.
@article{b071c47d-17e8-429a-bc72-36f1be410067,
abstract = {{<p><br>
Mn-doped AlN films were prepared by magnetron reactive sputtering system. The preparation conditions were optimized to give pure single-phase AlMnN films. The films were deposited on quartz substrates. The single-phase films were obtained in argon-nitrogen pressure of 6 mTorr and a substrate temperature of 300 °C. The films typically had a thickness of 0.4 μm. The XRD pattern indicated a pure AlMnN phase. The concentration of Mn was determined by energy dispersive X-ray and X-ray photoemission spectrometry. The saturation magnetization (M<br>
<sub>s</sub><br>
) decreased with increasing Mn concentration exponentially. A maximum M<br>
<sub>s</sub><br>
of 9.58 emu/cm<br>
<sup>3</sup><br>
was obtained at room temperature with Mn doping of 4.5%. The optical band gap decreased from 6.2 to 4.95 eV with increasing Mn concentration from 0 to 13.6% with same trend to magnetic properties. The change of the optical band gap was strongly correlated with magnetization data.</p>}},
author = {{Song, Young Yeal and Quang, Pham Hong and Lee, Kyu Won and Yu, Seong Cho and Pham, Van-Thai}},
issn = {{0304-8853}},
keywords = {{Band structure; Diluted magnetic semiconductor; Magnetization-saturation; Transport properties}},
language = {{eng}},
month = {{04}},
pages = {{1375--1378}},
publisher = {{Elsevier}},
series = {{Journal of Magnetism and Magnetic Materials}},
title = {{Change of optical band gap and magnetization with Mn concentration in Mn-doped AlN films}},
url = {{http://dx.doi.org/10.1016/j.jmmm.2004.11.441}},
doi = {{10.1016/j.jmmm.2004.11.441}},
volume = {{290-291 PART 2}},
year = {{2005}},
}