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Change of optical band gap and magnetization with Mn concentration in Mn-doped AlN films

Song, Young Yeal ; Quang, Pham Hong ; Lee, Kyu Won ; Yu, Seong Cho and Pham, Van-Thai LU (2005) In Journal of Magnetism and Magnetic Materials 290-291 PART 2. p.1375-1378
Abstract


Mn-doped AlN films were prepared by magnetron reactive sputtering system. The preparation conditions were optimized to give pure single-phase AlMnN films. The films were deposited on quartz substrates. The single-phase films were obtained in argon-nitrogen pressure of 6 mTorr and a substrate temperature of 300 °C. The films typically had a thickness of 0.4 μm. The XRD pattern indicated a pure AlMnN phase. The concentration of Mn was determined by energy dispersive X-ray and X-ray photoemission spectrometry. The saturation magnetization (M
s
) decreased with increasing Mn concentration exponentially. A maximum M
... (More)


Mn-doped AlN films were prepared by magnetron reactive sputtering system. The preparation conditions were optimized to give pure single-phase AlMnN films. The films were deposited on quartz substrates. The single-phase films were obtained in argon-nitrogen pressure of 6 mTorr and a substrate temperature of 300 °C. The films typically had a thickness of 0.4 μm. The XRD pattern indicated a pure AlMnN phase. The concentration of Mn was determined by energy dispersive X-ray and X-ray photoemission spectrometry. The saturation magnetization (M
s
) decreased with increasing Mn concentration exponentially. A maximum M
s
of 9.58 emu/cm
3
was obtained at room temperature with Mn doping of 4.5%. The optical band gap decreased from 6.2 to 4.95 eV with increasing Mn concentration from 0 to 13.6% with same trend to magnetic properties. The change of the optical band gap was strongly correlated with magnetization data.

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author
; ; ; and
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Band structure, Diluted magnetic semiconductor, Magnetization-saturation, Transport properties
in
Journal of Magnetism and Magnetic Materials
volume
290-291 PART 2
pages
4 pages
publisher
Elsevier
external identifiers
  • scopus:14944346764
ISSN
0304-8853
DOI
10.1016/j.jmmm.2004.11.441
language
English
LU publication?
no
id
b071c47d-17e8-429a-bc72-36f1be410067
date added to LUP
2019-06-30 10:12:20
date last changed
2022-01-31 23:00:53
@article{b071c47d-17e8-429a-bc72-36f1be410067,
  abstract     = {{<p><br>
                            Mn-doped AlN films were prepared by magnetron reactive sputtering system. The preparation conditions were optimized to give pure single-phase AlMnN films. The films were deposited on quartz substrates. The single-phase films were obtained in argon-nitrogen pressure of 6 mTorr and a substrate temperature of 300 °C. The films typically had a thickness of 0.4 μm. The XRD pattern indicated a pure AlMnN phase. The concentration of Mn was determined by energy dispersive X-ray and X-ray photoemission spectrometry. The saturation magnetization (M<br>
                            <sub>s</sub><br>
                            ) decreased with increasing Mn concentration exponentially. A maximum M<br>
                            <sub>s</sub><br>
                             of 9.58 emu/cm<br>
                            <sup>3</sup><br>
                             was obtained at room temperature with Mn doping of 4.5%. The optical band gap decreased from 6.2 to 4.95 eV with increasing Mn concentration from 0 to 13.6% with same trend to magnetic properties. The change of the optical band gap was strongly correlated with magnetization data.</p>}},
  author       = {{Song, Young Yeal and Quang, Pham Hong and Lee, Kyu Won and Yu, Seong Cho and Pham, Van-Thai}},
  issn         = {{0304-8853}},
  keywords     = {{Band structure; Diluted magnetic semiconductor; Magnetization-saturation; Transport properties}},
  language     = {{eng}},
  month        = {{04}},
  pages        = {{1375--1378}},
  publisher    = {{Elsevier}},
  series       = {{Journal of Magnetism and Magnetic Materials}},
  title        = {{Change of optical band gap and magnetization with Mn concentration in Mn-doped AlN films}},
  url          = {{http://dx.doi.org/10.1016/j.jmmm.2004.11.441}},
  doi          = {{10.1016/j.jmmm.2004.11.441}},
  volume       = {{290-291 PART 2}},
  year         = {{2005}},
}