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Control of excitonic and electron-hole processes in wide-gap crystals by means of elastic uniaxial stress

Lushchik, A ; Lushchik, C ; Vasil'chenko, E ; Kirm, M and Martinson, Indrek LU (2002) In Surface Review and Letters 9(1). p.299-304
Abstract
The time-resolved emission spectra and the excitation spectra of the main emissions have been measured for the first time in stressed and unstressed RbI crystals using synchrotron radiation of 10-30 eV at 8 K. It has been shown that the applied elastic uniaxial stress (EUS) offers promise for the separation of the elementary multiplication mechanisms of electronic excitations. A different influence of EUS on the self-trapping of excitons or holes at 8 K has been discussed. The mean free path of free excitons decreases, while that of valence holes increases in a stressed RbI crystal.
Please use this url to cite or link to this publication:
author
; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Surface Review and Letters
volume
9
issue
1
pages
299 - 304
publisher
World Scientific Publishing
external identifiers
  • wos:000177754500045
  • scopus:0036463057
ISSN
0218-625X
DOI
10.1142/S0218625X02002221
language
English
LU publication?
yes
id
b17cf002-39c9-4205-acb5-ba544d069c60 (old id 329344)
date added to LUP
2016-04-01 16:13:02
date last changed
2022-02-05 06:38:47
@article{b17cf002-39c9-4205-acb5-ba544d069c60,
  abstract     = {{The time-resolved emission spectra and the excitation spectra of the main emissions have been measured for the first time in stressed and unstressed RbI crystals using synchrotron radiation of 10-30 eV at 8 K. It has been shown that the applied elastic uniaxial stress (EUS) offers promise for the separation of the elementary multiplication mechanisms of electronic excitations. A different influence of EUS on the self-trapping of excitons or holes at 8 K has been discussed. The mean free path of free excitons decreases, while that of valence holes increases in a stressed RbI crystal.}},
  author       = {{Lushchik, A and Lushchik, C and Vasil'chenko, E and Kirm, M and Martinson, Indrek}},
  issn         = {{0218-625X}},
  language     = {{eng}},
  number       = {{1}},
  pages        = {{299--304}},
  publisher    = {{World Scientific Publishing}},
  series       = {{Surface Review and Letters}},
  title        = {{Control of excitonic and electron-hole processes in wide-gap crystals by means of elastic uniaxial stress}},
  url          = {{http://dx.doi.org/10.1142/S0218625X02002221}},
  doi          = {{10.1142/S0218625X02002221}},
  volume       = {{9}},
  year         = {{2002}},
}