A 4.3mW mmWave DividebyTwo Circuit with 30% Locking Range in 28nm FDSOI CMOS
(2018) 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of SystemonChip (SoC) Abstract (Swedish)
 A mmwave dividebytwo circuit with high injection efficiency, implemented in a 28nm fullydepleted silicononinsulator (FDSOI) CMOS process is demonstrated standalone, as well as using an onchip voltage controlled oscillator (VCO) as the input signal source. Measurements show that the divider has a 30.1 % tuning range centered at an output frequency of 24 GHz, at an input signal power of 1.5 dBm, and a power consumption of 4.3 mW from a 0.9 V supply. The VCO and divider combination has a tuning range of 10.2 %, centered at an output frequency of 30.2 GHz, at a total power consumption of 6.3 mW, and an output phase noise of 111 dBc/Hz at 10 MHz offset. The active area of the divider is 0.032 mm 2 and of the divider and VCO... (More)
 A mmwave dividebytwo circuit with high injection efficiency, implemented in a 28nm fullydepleted silicononinsulator (FDSOI) CMOS process is demonstrated standalone, as well as using an onchip voltage controlled oscillator (VCO) as the input signal source. Measurements show that the divider has a 30.1 % tuning range centered at an output frequency of 24 GHz, at an input signal power of 1.5 dBm, and a power consumption of 4.3 mW from a 0.9 V supply. The VCO and divider combination has a tuning range of 10.2 %, centered at an output frequency of 30.2 GHz, at a total power consumption of 6.3 mW, and an output phase noise of 111 dBc/Hz at 10 MHz offset. The active area of the divider is 0.032 mm 2 and of the divider and VCO combination 0.043 mm 2. (Less)
 Abstract
 A mmwave dividebytwo circuit with high injection efficiency, implemented in a 28nm fullydepleted silicononinsulator (FDSOI) CMOS process is demonstrated standalone, as well as using an onchip voltage controlled oscillator (VCO) as the input signal source. Measurements show that the divider has a 30.1 % tuning range centered at an output frequency of 24 GHz, at an input signal power of 1.5 dBm, and a power consumption of 4.3 mW from a 0.9 V supply. The VCO and divider combination has a tuning range of 10.2 %, centered at an output frequency of 30.2 GHz, at a total power consumption of 6.3 mW, and an output phase noise of 111 dBc/Hz at 10 MHz offset. The active area of the divider is 0.032 mm 2 and of the divider and VCO... (More)
 A mmwave dividebytwo circuit with high injection efficiency, implemented in a 28nm fullydepleted silicononinsulator (FDSOI) CMOS process is demonstrated standalone, as well as using an onchip voltage controlled oscillator (VCO) as the input signal source. Measurements show that the divider has a 30.1 % tuning range centered at an output frequency of 24 GHz, at an input signal power of 1.5 dBm, and a power consumption of 4.3 mW from a 0.9 V supply. The VCO and divider combination has a tuning range of 10.2 %, centered at an output frequency of 30.2 GHz, at a total power consumption of 6.3 mW, and an output phase noise of 111 dBc/Hz at 10 MHz offset. The active area of the divider is 0.032 mm 2 and of the divider and VCO combination 0.043 mm 2 . (Less)
Please use this url to cite or link to this publication:
http://lup.lub.lu.se/record/b3a0e6c0faf64560bb828664482c8efb
 author
 Forsberg, Therese ^{LU} ; Wernehag, Johan ^{LU} ; Sjöland, Henrik ^{LU} and Törmänen, Markus ^{LU}
 organization
 publishing date
 20181030
 type
 Chapter in Book/Report/Conference proceeding
 publication status
 published
 subject
 host publication
 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of SystemonChip (SoC)
 pages
 4 pages
 publisher
 IEEEInstitute of Electrical and Electronics Engineers Inc.
 conference name
 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of SystemonChip (SoC)
 conference location
 Tallin, Estonia
 conference dates
 20181030  20181031
 external identifiers

 scopus:85060596647
 ISBN
 9781538676561
 9781538676578
 DOI
 10.1109/NORCHIP.2018.8573468
 language
 English
 LU publication?
 yes
 id
 b3a0e6c0faf64560bb828664482c8efb
 date added to LUP
 20190108 09:44:08
 date last changed
 20190305 04:30:21
@inproceedings{b3a0e6c0faf64560bb828664482c8efb, abstract = {A mmwave dividebytwo circuit with high injection efficiency, implemented in a 28nm fullydepleted silicononinsulator (FDSOI) CMOS process is demonstrated standalone, as well as using an onchip voltage controlled oscillator (VCO) as the input signal source. Measurements show that the divider has a 30.1 % tuning range centered at an output frequency of 24 GHz, at an input signal power of 1.5 dBm, and a power consumption of 4.3 mW from a 0.9 V supply. The VCO and divider combination has a tuning range of 10.2 %, centered at an output frequency of 30.2 GHz, at a total power consumption of 6.3 mW, and an output phase noise of 111 dBc/Hz at 10 MHz offset. The active area of the divider is 0.032 mm 2 and of the divider and VCO combination 0.043 mm 2 .}, author = {Forsberg, Therese and Wernehag, Johan and Sjöland, Henrik and Törmänen, Markus}, isbn = {9781538676561}, language = {eng}, location = {Tallin, Estonia}, month = {10}, pages = {4}, publisher = {IEEEInstitute of Electrical and Electronics Engineers Inc.}, title = {A 4.3mW mmWave DividebyTwo Circuit with 30% Locking Range in 28nm FDSOI CMOS}, url = {http://dx.doi.org/10.1109/NORCHIP.2018.8573468}, year = {2018}, }