Resonant states in doped quantum wells
(2003) In Physica Status Solidi. B: Basic Research 235(1). p.85-88- Abstract
- Resonant states can have an important influence on the electronic transport, noise and optical properties of heterostructure devices. We have used a non-variational method to study the resonant states formed by shallow donors inside and outside of quantum wells. The method allows us the evaluation of the position and the width (lifetime) of the resonant states and also of matrix elements such as optical transition probabilities. When the width is compared to results from the approach of resolvent operators, a quantitative difference is found, which we attribute to the neglected intraband scattering in the latter method. We also show how the impurity states, localized and resonant, evolve as the donor is moved into the quantum well from an... (More)
- Resonant states can have an important influence on the electronic transport, noise and optical properties of heterostructure devices. We have used a non-variational method to study the resonant states formed by shallow donors inside and outside of quantum wells. The method allows us the evaluation of the position and the width (lifetime) of the resonant states and also of matrix elements such as optical transition probabilities. When the width is compared to results from the approach of resolvent operators, a quantitative difference is found, which we attribute to the neglected intraband scattering in the latter method. We also show how the impurity states, localized and resonant, evolve as the donor is moved into the quantum well from an originally infinite distance. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/319201
- author
- Blom, Anders LU ; Odnoblyudov, M A ; Yassievich, I N and Chao, Koung-An LU
- organization
- publishing date
- 2003
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physica Status Solidi. B: Basic Research
- volume
- 235
- issue
- 1
- pages
- 85 - 88
- publisher
- John Wiley & Sons Inc.
- external identifiers
-
- wos:000180751400015
- scopus:0037285791
- ISSN
- 0370-1972
- DOI
- 10.1002/pssb.200301528
- language
- English
- LU publication?
- yes
- id
- b402c6e1-05d5-444e-a1ee-07406d922247 (old id 319201)
- date added to LUP
- 2016-04-01 16:26:29
- date last changed
- 2022-01-28 19:44:58
@article{b402c6e1-05d5-444e-a1ee-07406d922247, abstract = {{Resonant states can have an important influence on the electronic transport, noise and optical properties of heterostructure devices. We have used a non-variational method to study the resonant states formed by shallow donors inside and outside of quantum wells. The method allows us the evaluation of the position and the width (lifetime) of the resonant states and also of matrix elements such as optical transition probabilities. When the width is compared to results from the approach of resolvent operators, a quantitative difference is found, which we attribute to the neglected intraband scattering in the latter method. We also show how the impurity states, localized and resonant, evolve as the donor is moved into the quantum well from an originally infinite distance.}}, author = {{Blom, Anders and Odnoblyudov, M A and Yassievich, I N and Chao, Koung-An}}, issn = {{0370-1972}}, language = {{eng}}, number = {{1}}, pages = {{85--88}}, publisher = {{John Wiley & Sons Inc.}}, series = {{Physica Status Solidi. B: Basic Research}}, title = {{Resonant states in doped quantum wells}}, url = {{http://dx.doi.org/10.1002/pssb.200301528}}, doi = {{10.1002/pssb.200301528}}, volume = {{235}}, year = {{2003}}, }