Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Micro-Raman spectroscopy for the detection of stacking fault density in InAs and GaAs nanowires

Tanta, Rawa ; Lindberg, Caroline ; Lehmann, Sebastian LU ; Bolinsson, Jessica LU ; Carro-Temboury, Miguel R. ; Dick, Kimberly A. LU ; Vosch, Tom ; Jespersen, Thomas Sand and Nygård, Jesper (2017) In Physical Review B 96(16).
Abstract

We investigate the relation between crystal stacking faults in individual wurtzite InAs and GaAs nanowires and the intensity of the forbidden longitudinal optical (LO) phonon mode in the Raman spectra. Micro-Raman spectroscopy and transmission electron microscopy are combined on the same individual nanowires to evaluate the LO mode intensity as a function of the stacking fault density. A clear increase in the LO mode intensity was observed when the stacking fault density was increased. Our results confirm the utility of Raman spectroscopy as a powerful tool for detecting crystal defects in nanowires.

Please use this url to cite or link to this publication:
author
; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B
volume
96
issue
16
article number
165433
publisher
American Physical Society
external identifiers
  • scopus:85037686152
  • wos:000413276300002
ISSN
2469-9950
DOI
10.1103/PhysRevB.96.165433
language
English
LU publication?
yes
id
b4d22ca5-b567-4c96-811f-380605a516c6
date added to LUP
2018-01-02 09:54:10
date last changed
2025-01-08 01:01:57
@article{b4d22ca5-b567-4c96-811f-380605a516c6,
  abstract     = {{<p>We investigate the relation between crystal stacking faults in individual wurtzite InAs and GaAs nanowires and the intensity of the forbidden longitudinal optical (LO) phonon mode in the Raman spectra. Micro-Raman spectroscopy and transmission electron microscopy are combined on the same individual nanowires to evaluate the LO mode intensity as a function of the stacking fault density. A clear increase in the LO mode intensity was observed when the stacking fault density was increased. Our results confirm the utility of Raman spectroscopy as a powerful tool for detecting crystal defects in nanowires.</p>}},
  author       = {{Tanta, Rawa and Lindberg, Caroline and Lehmann, Sebastian and Bolinsson, Jessica and Carro-Temboury, Miguel R. and Dick, Kimberly A. and Vosch, Tom and Jespersen, Thomas Sand and Nygård, Jesper}},
  issn         = {{2469-9950}},
  language     = {{eng}},
  month        = {{10}},
  number       = {{16}},
  publisher    = {{American Physical Society}},
  series       = {{Physical Review B}},
  title        = {{Micro-Raman spectroscopy for the detection of stacking fault density in InAs and GaAs nanowires}},
  url          = {{http://dx.doi.org/10.1103/PhysRevB.96.165433}},
  doi          = {{10.1103/PhysRevB.96.165433}},
  volume       = {{96}},
  year         = {{2017}},
}